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公开(公告)号:KR1019890001473B1
公开(公告)日:1989-05-04
申请号:KR1019860003404
申请日:1986-04-30
Applicant: 한국과학기술연구원
IPC: H02M7/00
Abstract: The method for reducing the high freq. components in the output voltage and mininizing the switching freq. is to get the modulation switching function by summing two switching functions whose phase difference against the high freq. component is π. The modulation switching function for 3 pulse UFC (Unrestriced Freq. Changer) is taken by summing 4 switching functions whose phase differences against each other are π/4+ π/8, π/4- π/8, - π/4+ π/8, - π/4- π/8 respectively. For 6 pulse UFC the phase differences are π/10+ π/14, π/10- π/14, - π/10+ π/14, and π/10- π/14 respectively.
Abstract translation: 降低频率的方法 输出电压中的组件和最小化开关频率。 是通过将相位差与高频相加的两个开关功能相加来获得调制开关功能。 分量为π。 3脉冲UFC(Unrestriced Freq。Changer)的调制切换功能是通过将4个相位差彼此相位为π/ 4 +π/ 8,π/ 4-π/ 8,-π/ 4 +π的4个开关函数 / 8, - π/ 4-π/ 8。 对于6脉冲UFC,相位差分别为π/ 10 +π/ 14,π/ 10-π/ 14,-π/ 10 +π/ 14和π/ 10-π/ 14。
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公开(公告)号:KR1019970000876B1
公开(公告)日:1997-01-20
申请号:KR1019940002389
申请日:1994-02-08
Applicant: 한국과학기술연구원
IPC: H02M7/53
Abstract: A high-speed gate drive circuit in an inverter circuit is provided, which is constructed in such a manner that the emitter of a semiconductor switch S1 is connected to one side of the primary side T11 of a sensing transformer, the cathod of a diode D2 is connected to the other side of the primary side T11, a gate resistor Rg1 is connected between a gate voltage Vg1 and the gate of semiconductor switch S1, the collector of a transistor Qa1 is serially connected to the cathod of a diode Da1 which is connected between the gate resistor Rg1 and gate of semiconductor switch S1, the emitter of transistor Qa1 is coupled to the emitter of semiconductor switch S1, a base resistor Rb1 is serially coupled to the base of transistor Qa1, and the secondary side T21 of the sensing transformer is connected in parallel to a sensing resistor Rs1 which is connected between the base resistor Rb1 and the emitter of transistor Qa1 in parallel.
Abstract translation: 提供了一种逆变器电路中的高速栅极驱动电路,其以半导体开关S1的发射极连接到感测变压器的初级侧T11的一侧,二极管D2的阴极 连接到初级侧T11的另一侧,栅极电阻Rg1连接在栅极电压Vg1和半导体开关S1的栅极之间,晶体管Qa1的集电极串联连接到连接的二极管Da1的阴极 在栅极电阻Rg1和半导体开关S1的栅极之间,晶体管Qa1的发射极耦合到半导体开关S1的发射极,基极电阻Rb1串联耦合到晶体管Qa1的基极,感测变压器的次级侧T21 与并联连接在基极电阻Rb1和晶体管Qa1的发射极之间的检测电阻Rs1并联连接。
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