公开(公告)号：KR1020130023011A

公开(公告)日：2013-03-07

申请号：KR1020110112253

申请日：2011-10-31

Applicant: 한국과학기술연구원

Inventor： 김상훈 ,  변지영 ,  하헌필 ,  임채선 ,  김도형 ,  최정범

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/58 ,  C23F1/12

Abstract: PURPOSE: A method for manufacturing a porous thin film structure using a dry process, and the porous thin film structure manufactured by the same are provided to maintain a constant porosity, thereby reproducing the sensitivities of sensors manufactured by the structure. CONSTITUTION: A method for manufacturing a porous thin film structure using a dry process comprises: a step of simultaneously depositing at least two elements, which have a different reactivity on a certain reactive gas from each other, in order to form an alloy thin film; and a step of manufacturing a porous thin film by selectively removing one element having a larger reactivity than the reactivity of the other from the alloy thin film. In the step of forming the alloy thin film, the alloy thin film is formed with the elements by sputter deposition. The alloy thin film includes at least two kinds of elements selected from a group of Pt, Pd, Ru, Rh, Ag, Au, Cr, Mn, Fe, Co, Ni, Cu, Si, As, Ge, Os, Re, Te, Ir, Al, B, C, O, N, P, Ti, V, Zr, Nb, Mo, Hf, Ta, and W. In the step of manufacturing the porous thin film, the element selectively removed is at least one kind selected from a group of Si, As, Ge, Os, Re, Te, Ir, Al, B, C, O, N, P, Cu, Cr, Ti, V, Zr, Nb, Mo, Hf, Ta, and W.

Abstract translation: 目的：提供一种使用干法制造多孔薄膜结构体的方法和由其制造的多孔薄膜结构，以保持恒定的孔隙率，从而再现由该结构制造的传感器的灵敏度。 构成：使用干法制造多孔薄膜结构的方法包括：为了形成合金薄膜，同时沉积至少两种元素的步骤，所述至少两种元素在一定的反应性气体上具有不同的反应性; 以及通过选择性地除去具有比其他合金薄膜的反应性更大的反应性的一种元素来制造多孔薄膜的步骤。 在形成合金薄膜的步骤中，合金薄膜通过溅射沉积形成元件。 合金薄膜包括选自Pt，Pd，Ru，Rh，Ag，Au，Cr，Mn，Fe，Co，Ni，Cu，Si，As，Ge，Os，Re中的至少两种元素， Te，Ir，Al，B，C，O，N，P，Ti，V，Zr，Nb，Mo，Hf，Ta和W.在制造多孔薄膜的步骤中， 一种选自Si，As，Ge，Os，Re，Te，Ir，Al，B，C，O，N，P，Cu，Cr，Ti，V，Zr，Nb，Mo，Hf，Ta ，和W.

公开(公告)号：KR1020140016404A

公开(公告)日：2014-02-07

申请号：KR1020140000779

申请日：2014-01-03

Applicant: 한국과학기술연구원

Inventor： 김상훈 ,  변지영 ,  하헌필 ,  임채선 ,  김도형 ,  최정범

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/58 ,  C23F1/12

Abstract: The present invention relates to a method for manufacturing a porous thin film structure by selectively removing a specific element using a dry etching method after a thin film is formed using two or more elements and a porous thin film structure manufactured by the method. By composing the entire process for manufacturing a porous thin film structure of the dry process, the present invention can manage a process more convenient than a wet process, such as an electrodepositing method or a selective melting method, can reduce environmental pollution, and enables mass production. Also, the present invention easily controls porosity and maintains the constant porosity. Thus, the present invention can manufacture the mesoporous thin film structure having excellent reproducibility as a sensor.

Abstract translation: 本发明涉及一种多孔薄膜结构的制造方法，其特征在于，在使用2种以上的元素形成薄膜后，通过使用干蚀刻法选择性地去除特定的元素，以及通过该方法制造的多孔薄膜结构体。 通过构成干法制造多孔薄膜结构的整个方法，本发明可以处理比诸如电沉积方法或选择性熔融方法的湿法更方便的方法可以减少环境污染，并且使质量 生产。 此外，本发明容易控制孔隙率并保持恒定的孔隙率。 因此，本发明可以制造作为传感器具有优异的再现性的介孔薄膜结构。