公开(公告)号：KR1020130099589A

公开(公告)日：2013-09-06

申请号：KR1020120021214

申请日：2012-02-29

Applicant: 한국과학기술연구원

Inventor： 김영환 ,  김용태 ,  최진일

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L45/16 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/143

Abstract: PURPOSE: A method for manufacturing a phase change random access memory using laser interference lithography is provided to manufacture a uniform nanostructure by applying the laser interference lithography when a cell array structure of the phase change random access memory is manufactured. CONSTITUTION: An insulation layer (30), a first electrode layer (50), a phase change material layer (20), and a transfer material layer (40) are successively deposited on a substrate (10). An array pattern is formed on the transfer material layer by using a laser interference lithography process. A metal layer (60) is formed on the transfer material layer with the array pattern. A second electrode layer is formed by removing the transfer material layer. A phase change layer (90) is formed by etching the phase change material layer using the second electrode layer as a mask.

Abstract translation: 目的：提供使用激光干涉光刻制造相变随机存取存储器的方法，以便在制造相变随机存取存储器的单元阵列结构时，通过应用激光干涉光刻来制造均匀的纳米结构。 构成：在衬底（10）上依次沉积绝缘层（30），第一电极层（50），相变材料层（20）和转移材料层（40）。 通过使用激光干涉光刻工艺在转印材料层上形成阵列图案。 金属层（60）以阵列图案形成在转印材料层上。 通过去除转印材料层形成第二电极层。 通过使用第二电极层作为掩模蚀刻相变材料层来形成相变层（90）。