公开(公告)号：KR100407907B1

公开(公告)日：2003-12-03

申请号：KR1020010026486

申请日：2001-05-15

Applicant: 한국과학기술연구원

Inventor： 신경호 ,  이우영 ,  박영준 ,  이경일 ,  하재근

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/307 ,  H01L43/12 ,  Y10T29/49044

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer (15), a tunnel barrier (16) formed at an upper surface of the first magnetic layer and a second magnetic layer (17) formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds SIMILAR 10 minutes at a temperature of 200 SIMILAR 600 DEG C to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract translation: 一种磁隧道结的制造方法包括以下步骤：形成磁隧道结，该磁隧道结构造为具有第一磁层（15），在第一磁层的上表面形成的隧道势垒（16）和第二磁层（ 17）形成在隧道屏障的上表面处; 并在200-600℃的温度下快速热处理5秒钟〜10分钟，使隧道壁垒中的氧重新分布，并使隧道壁垒与磁性层之间的界面均匀。 通过快速热退火可以提高磁隧道结的隧穿磁阻和热稳定性。 ＆lt;图像＆GT;

公开(公告)号：KR1020020087640A

公开(公告)日：2002-11-23

申请号：KR1020010026486

申请日：2001-05-15

Applicant: 한국과학기술연구원

Inventor： 신경호 ,  이우영 ,  박영준 ,  이경일 ,  하재근

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/307 ,  H01L43/12 ,  Y10T29/49044

Abstract: PURPOSE: A magnetic tunnel junction device and a thermal anneal method thereof are provided to improve the TMR(Tunneling Magnetoresistance) rate and optimize the characteristics of the device in a shorter time more effectively by reducing the bent of an oxide layer(Tunnel Barrier Layer). CONSTITUTION: A magnetic tunnel junction device includes an anti-ferromagnetic layer formed of anti-ferromagnetic material, a fixed layer formed on the anti-ferromagnetic layer with a ferromagnetic material, a tunnel barrier layer(16) formed on the fixing layer with an electrically insulating material, and a free layer formed on the tunnel barrier layer with a ferromagnetic material, wherein the magnetic tunnel junction device is subject to rapid thermal anneal by heating at a temperature of 200-400°C for 10sec or less and cooled for 6min or less.

Abstract translation: 目的：提供磁隧道结器件及其热退火方法，以通过减少氧化层（隧道屏障层）的弯曲来更有效地提高TMR（隧道磁阻）速率并在更短的时间内优化器件的特性， 。 构造：磁性隧道结装置包括由反铁磁材料形成的反铁磁层，在具有铁磁材料的反铁磁层上形成的固定层，在电气上形成在固定层上的隧道势垒层（16） 绝缘材料和形成在隧道势垒层上的铁磁材料的自由层，其中磁性隧道结装置通过在200-400℃的温度下加热10秒以上并冷却6分钟进行快速热退火，或 减。