公开(公告)号：KR1020030082030A

公开(公告)日：2003-10-22

申请号：KR1020020020532

申请日：2002-04-16

Applicant: 한국과학기술연구원

Inventor： 김은규 ,  박용주 ,  김태환 ,  강승언 ,  추동철 ,  오현주 ,  현정우

IPC: H01J27/26

Abstract: PURPOSE: A method for fabricating a coil type liquid metal ion source including a liquid metal supply path is provided to generate stably ion beams by controlling the supply of the liquid metal. CONSTITUTION: An emitter(3) is etched by performing an electrochemical etching process. The emitter(3) including a liquid metal supply path is fabricated by etching the emitter(3). A coil type liquid metal storage tank(7) is provided. The liquid metal is transferred from a high vacuum chamber to the coil type liquid metal storage tank(7). The coil type liquid metal is formed with Gallium. The coil type liquid metal storage tank(7) is fabricated by tungsten filament. The emitter(3) is fabricated by tungsten wire. The electrochemical etching process includes a preliminary etching process, a pointing etching process, and a blunting etching process.

Abstract translation: 目的：提供一种制造包括液态金属供应路径的线圈型液态金属离子源的方法，以通过控制液态金属的供应来产生稳定的离子束。 构成：通过进行电化学蚀刻工艺来蚀刻发射体（3）。 通过蚀刻发射体（3）制造包括液态金属供给路径的发射体（3）。 提供一种线圈型液态金属储罐（7）。 液体金属从高真空室转移到线圈型液态金属储罐（7）。 线圈型液态金属由镓形成。 线圈型液态金属储罐（7）由钨丝制成。 发射极（3）由钨丝制成。 电化学蚀刻工艺包括初步蚀刻工艺，指向蚀刻工艺和钝化蚀刻工艺。