公开(公告)号：KR100398312B1

公开(公告)日：2003-09-19

申请号：KR1020000037060

申请日：2000-06-30

Applicant: 한국과학기술원

Inventor： 김진백 ,  이재준 ,  강재성

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  C07F7/0818 ,  G03F7/0045 ,  G03F7/0758 ,  Y10S430/106

Abstract: The present invention relates to norbornene monomers with a novel functional group containing an organometal as shown in the following Formula (I) or (II), a photoresist containing its polymers, manufacturing method thereof, and a method of forming photoresist patterns.Unlike existing polymers for photoresist matrix, polymers made by norbornene monomers described in the present invention is a chemical amplification type induced by photosensitive acids and can result in difference in silicon content between the exposed area and unexposed area due to dissociation of side chain containing silicon. The difference in the silicon content results in different etch rate with respect to oxygen plasma which makes dry developing possible.

Abstract translation: 本发明涉及具有如下式（I）或（II）所示的含有机金属的新型官能团的降冰片烯单体，含有其聚合物的光刻胶，其制造方法以及形成光刻胶图案的方法。不像现有的聚合物 对于光致抗蚀剂基质，由本发明描述的降冰片烯单体制备的聚合物是由光敏酸诱导的化学放大型，并且由于含硅侧链的离解可导致曝光区域和未曝光区域之间的硅含量差异。 硅含量的差异导致与氧等离子体不同的蚀刻速率，这使得干显影成为可能。

公开(公告)号：KR1020020005063A

公开(公告)日：2002-01-17

申请号：KR1020000037060

申请日：2000-06-30

Applicant: 한국과학기술원

Inventor： 김진백 ,  이재준 ,  강재성

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  C07F7/0818 ,  G03F7/0045 ,  G03F7/0758 ,  Y10S430/106

Abstract: PURPOSE: Provided are a norbornene monomer, containing an organic metal, for producing a photoresist capable of forming pattern with high resolution in far ultraviolet range, the photoresist produced by using the norbornene monomer, and a method for forming the pattern of the photoresist. CONSTITUTION: The norbornene monomer represented by the formula(I) or (II) is produced by reacting an alcohol represented by the formula(XII) or (XIII) and a 2-chlorocarbonyl-5-norbornene derivative. The photoresist is produced by dissolving a polymer represented by the formula(III) or (IV) and a photoacid generator in a solvent, wherein the polymer is produced by using the norbornene monomer represented by the formula(I) or (II). And the method for forming the pattern of the photoresist comprises the steps of: forming a photoresist film by spreading the photoresist on a substrate; exposing the photoresist film by using an exposing mask; heat-treating the exposed resultant; etching the exposed parts of the photoresist film by a reactive ion etching method using an oxygen plasma. In the formula, R1-R10 are each hydrogen, C1-C4 alkyl, C1-C4 alkoxy, phenyl, or -MR3, wherein M is Si, Ge, Sn, or OSi, R is C1-C4 alkyl, C1-C4 alkoxy, phenyl, benzyl, or phenoxy, and n is the degree of polymerization being 1-100.

Abstract translation: 目的：提供含有有机金属的降冰片烯单体，用于制造能够在远紫外范围内以高分辨率形成图案的光致抗蚀剂，通过使用降冰片烯单体制备的光致抗蚀剂，以及形成光致抗蚀剂图案的方法。 构成：由式（I）或（II）表示的降冰片烯单体通过使式（XII）或（XIII）表示的醇与2-氯羰基-5-降冰片烯衍生物反应来制备。 通过将由式（III）或（IV）表示的聚合物和光酸产生剂溶解在溶剂中来制备光致抗蚀剂，其中通过使用由式（I）或（II）表示的降冰片烯单体制备聚合物。 并且用于形成光致抗蚀剂图案的方法包括以下步骤：通过将光致抗蚀剂铺展在基底上来形成光致抗蚀剂膜; 通过使用曝光掩模曝光光致抗蚀剂膜; 对暴露的结果进行热处理; 通过使用氧等离子体的反应离子蚀刻方法蚀刻光致抗蚀剂膜的曝光部分。 式中，R 1 -R 10各自为氢，C 1 -C 4烷基，C 1 -C 4烷氧基，苯基或-MR 3，其中M为Si，Ge，Sn或OSi，R为C 1 -C 4烷基，C 1 -C 4烷氧基 ，苯基，苄基或苯氧基，n是聚合度为1-100。