公开(公告)号：KR100398312B1

公开(公告)日：2003-09-19

申请号：KR1020000037060

申请日：2000-06-30

Applicant: 한국과학기술원

Inventor： 김진백 ,  이재준 ,  강재성

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  C07F7/0818 ,  G03F7/0045 ,  G03F7/0758 ,  Y10S430/106

Abstract: The present invention relates to norbornene monomers with a novel functional group containing an organometal as shown in the following Formula (I) or (II), a photoresist containing its polymers, manufacturing method thereof, and a method of forming photoresist patterns.Unlike existing polymers for photoresist matrix, polymers made by norbornene monomers described in the present invention is a chemical amplification type induced by photosensitive acids and can result in difference in silicon content between the exposed area and unexposed area due to dissociation of side chain containing silicon. The difference in the silicon content results in different etch rate with respect to oxygen plasma which makes dry developing possible.

Abstract translation: 本发明涉及具有如下式（I）或（II）所示的含有机金属的新型官能团的降冰片烯单体，含有其聚合物的光刻胶，其制造方法以及形成光刻胶图案的方法。不像现有的聚合物 对于光致抗蚀剂基质，由本发明描述的降冰片烯单体制备的聚合物是由光敏酸诱导的化学放大型，并且由于含硅侧链的离解可导致曝光区域和未曝光区域之间的硅含量差异。 硅含量的差异导致与氧等离子体不同的蚀刻速率，这使得干显影成为可能。

公开(公告)号：KR1020020005063A

公开(公告)日：2002-01-17

申请号：KR1020000037060

申请日：2000-06-30

Applicant: 한국과학기술원

Inventor： 김진백 ,  이재준 ,  강재성

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  C07F7/0818 ,  G03F7/0045 ,  G03F7/0758 ,  Y10S430/106

Abstract: PURPOSE: Provided are a norbornene monomer, containing an organic metal, for producing a photoresist capable of forming pattern with high resolution in far ultraviolet range, the photoresist produced by using the norbornene monomer, and a method for forming the pattern of the photoresist. CONSTITUTION: The norbornene monomer represented by the formula(I) or (II) is produced by reacting an alcohol represented by the formula(XII) or (XIII) and a 2-chlorocarbonyl-5-norbornene derivative. The photoresist is produced by dissolving a polymer represented by the formula(III) or (IV) and a photoacid generator in a solvent, wherein the polymer is produced by using the norbornene monomer represented by the formula(I) or (II). And the method for forming the pattern of the photoresist comprises the steps of: forming a photoresist film by spreading the photoresist on a substrate; exposing the photoresist film by using an exposing mask; heat-treating the exposed resultant; etching the exposed parts of the photoresist film by a reactive ion etching method using an oxygen plasma. In the formula, R1-R10 are each hydrogen, C1-C4 alkyl, C1-C4 alkoxy, phenyl, or -MR3, wherein M is Si, Ge, Sn, or OSi, R is C1-C4 alkyl, C1-C4 alkoxy, phenyl, benzyl, or phenoxy, and n is the degree of polymerization being 1-100.

Abstract translation: 目的：提供含有有机金属的降冰片烯单体，用于制造能够在远紫外范围内以高分辨率形成图案的光致抗蚀剂，通过使用降冰片烯单体制备的光致抗蚀剂，以及形成光致抗蚀剂图案的方法。 构成：由式（I）或（II）表示的降冰片烯单体通过使式（XII）或（XIII）表示的醇与2-氯羰基-5-降冰片烯衍生物反应来制备。 通过将由式（III）或（IV）表示的聚合物和光酸产生剂溶解在溶剂中来制备光致抗蚀剂，其中通过使用由式（I）或（II）表示的降冰片烯单体制备聚合物。 并且用于形成光致抗蚀剂图案的方法包括以下步骤：通过将光致抗蚀剂铺展在基底上来形成光致抗蚀剂膜; 通过使用曝光掩模曝光光致抗蚀剂膜; 对暴露的结果进行热处理; 通过使用氧等离子体的反应离子蚀刻方法蚀刻光致抗蚀剂膜的曝光部分。 式中，R 1 -R 10各自为氢，C 1 -C 4烷基，C 1 -C 4烷氧基，苯基或-MR 3，其中M为Si，Ge，Sn或OSi，R为C 1 -C 4烷基，C 1 -C 4烷氧基 ，苯基，苄基或苯氧基，n是聚合度为1-100。

公开(公告)号：KR100527411B1

公开(公告)日：2005-11-09

申请号：KR1020030058525

申请日：2003-08-23

Applicant: 한국과학기술원

Inventor： 김진백 ,  오태환 ,  최재학 ,  이재준

IPC: G03F7/039

CPC classification number: C07D313/06 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/146 ,  Y10S430/167

Abstract: 본 발명은 포토레지스트 단량체인 하기 구조식 (I) 또는 (II)로 표시되는 신규한 옥세판-2-온 구조를 함유하는 노르보넨 단량체, 아크릴레이트 단량체, 메타크릴레이트 단량체 및 이들의 중합체를 함유하는 포토레지스트 조성물 및 그 제조 방법과 포토레지스트 패턴의 형성 방법에 관한 것이다.
구조식 (I) 구조식 (II)

본 발명에 따른 신규한 옥세판-2-온 구조를 함유하는 노르보넨 단량체, 아크릴레이트 단량체 및 메타크릴레이트 단량체를 이용하여 형성된 중합체는 기존의 포토레지스트의 매트릭스 중합체로 사용되는 것들과는 달리 광산에 의해 화학증폭형으로 개환반응 (ring-opening)을 일으켜 질량의 변화없이 카르복시산을 발생시킨다. 또한 본 발명의 포토레지스트 중합체는 에칭내성, 내열성 및 접착성이 우수할 뿐만 아니라 범용 현상액인 테트라메틸암모늄 하이드록사이드 (TMAH) 수용액에도 현상이 가능하여 고집적 반도체 소자의 미세회로를 제조할 때 원자외선 영역의 광원, 특히 ArF (193nm) 광원을 이용한 리소그래피 공정에 매우 유용하게 사용될 수 있다.

公开(公告)号：KR1020010003015A

公开(公告)日：2001-01-15

申请号：KR1019990023124

申请日：1999-06-19

Applicant: 현대자동차주식회사 ,  한국과학기술원

Inventor： 임양수 ,  박봉현 ,  이성준 ,  김진백 ,  이재준 ,  신범수 ,  조갑성

IPC: C09D183/06

CPC classification number: C09D183/04 ,  C08K5/0025

Abstract: PURPOSE: The coating composition prepared by adding dicyandiamide as a curing catalyst to a silicon-based coating composition comprising a silanol partial condensate and a colloidal silica dispersion is provided, which has excellent abrasion resistance and adhesion property and can store at ordinary temperatures and is excellent in low temperatures cross-linking curing and simplifies coating processes without changing mechanical and mechanical properties. CONSTITUTION: In a silicon-based coating composition comprising a silanol partial condensate and a colloidal silica dispersion, the composition contains a silanol partial condensate having a particle diameter of 2 to 30 micrometer and a colloidal silica dispersion in a weight ratio of 30 to 80 and 20 to 70% by weight and 0.05 to 2.5% by weight of dicyandiamide as a curing catalyst based on the solids content of the mixtures. The composition is suitable for coating an automobile part, optical material, building material and electrical material.

Abstract translation: 目的：提供通过将双氰胺作为固化催化剂添加到包含硅烷醇部分缩合物和胶体二氧化硅分散体的硅系涂料组合物中制备的涂料组合物，其具有优异的耐磨性和粘合性，并且可以在常温下储存并且是优异的 在低温下交联固化，简化了涂层工艺，而不改变机械和机械性能。 构成：在包含硅烷醇部分缩合物和胶体二氧化硅分散体的硅基涂料组合物中，该组合物含有粒径为2至30微米的硅烷醇部分缩合物和重量比为30至80的胶体二氧化硅分散体和 20至70重量％和0.05至2.5重量％的双氰胺作为固化催化剂，基于混合物的固体含量。 该组合物适用于涂覆汽车部件，光学材料，建筑材料和电气材料。

公开(公告)号：KR101043582B1

公开(公告)日：2011-06-22

申请号：KR1020100018979

申请日：2010-03-03

Applicant: 한국과학기술원

Inventor： 강정구 ,  이재준 ,  이가인 ,  나라얀찬드라데브낫 ,  수브라타사르카 ,  신원호

IPC: H01L31/04

CPC classification number: H01G9/2031 ,  B82Y30/00 ,  H01L31/1884 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/444 ,  Y02E10/542 ,  Y02E10/549 ,  Y10S977/749 ,  Y10S977/948

Abstract: PURPOSE: A dye-sensitized solar cell using nitrogen-doped carbon nano-tube and a method for manufacturing the same are provided to increase the connectivity of a transparent electrode and an oxide semiconductor. CONSTITUTION: A transparent electrode(120) is formed on the internal surface of an upper transparent substrate(110). An oxide semiconductor porous cathode(140) is formed on the transparent electrode. A counter electrode(160) corresponding to the cathode is formed on the lower substrate. Electrolyte(190) is filled between the cathode and the counter electrode. A nitrogen-doped carbon nano-tube layer(130) is formed between the transparent electrode and the cathode.

Abstract translation: 目的：提供使用氮掺杂碳纳米管的染料敏化太阳能电池及其制造方法，以增加透明电极和氧化物半导体的连通性。 构成：在上透明基板（110）的内表面上形成透明电极（120）。 在透明电极上形成氧化物半导体多孔阴极（140）。 在下基板上形成对应于阴极的对电极（160）。 电解液（190）填充在阴极和对电极之间。 在透明电极和阴极之间形成氮掺杂的碳纳米管层（130）。

公开(公告)号：KR1020050020510A

公开(公告)日：2005-03-04

申请号：KR1020030058525

申请日：2003-08-23

Applicant: 한국과학기술원

Inventor： 김진백 ,  오태환 ,  최재학 ,  이재준

IPC: G03F7/039

CPC classification number: C07D313/06 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/146 ,  Y10S430/167

Abstract: PURPOSE: Provided are monomers containing novel oxepan-2-one structure represented by formula (I) and (II), a photoresist composition containing their polymer, and a pattern formation method. The polymers prepared by polymerization of norbornene, acrylate and methacrylate monomers containing novel oxepan-2-one structure generate carboxyl acids through ring opening and without the change of mass. The photoresist polymers not only have excellent properties of anti-etching, heat resistance and adhesion but also are useful for lithography process using ArF light source in the far infrared region in preparing microcircuit of highly integrated semiconducting device. CONSTITUTION: The polymer comprises: (A) the monomers represented by formula (I) and (II), wherein R1, R2 and R4 are independently C1-4 alkyl, C1-4 alkoxy, phenyl; R3 is hydrogen, C1-20 alkyl, C1-20 alkoxy, phenyl, C1-20 hydroxy alkyl, C1-20 alkoxy alkyl, C6-30 aliphatic cyclic hydrocarbon, C6-30 aliphatic lactone; X is hydrogen or hydroxyl; monomer synthesized by reacting alcohol (III) with 2-chlorocarbonyl-5-norbornene, acryloyl chloride and methacryloyl chloride; and (B) their polymers. The photoresist composition comprises the polymers; and a photoacid generator represented by formula (IV), (V) and (VI) wherein R1, R2 and R4 are independently C1-4 alkyl, C1-4 alkoxy, phenyl; R3 is hydrogen, C1-20 alkyl, C1-20 alkoxy, phenyl, C1-20 hydroxy alkyl, C1-20 alkoxy alkyl, C6-30 aliphatic cyclic hydrocarbon, C6-30 aliphatic lactone; n is degree of polymerization value of 1000; x and y are mole ratio wherein x + y

Abstract translation: 目的：提供含有由式（I）和（II）表示的新型氧杂环庚烷-2-酮结构的单体，含有其聚合物的光致抗蚀剂组合物和图案形成方法。 通过聚合具有新的氧杂环丙烷-2-酮结构的降冰片烯，丙烯酸酯和甲基丙烯酸酯单体制备的聚合物通过开环产生羧酸而不产生质量变化。 光致抗蚀剂聚合物不仅具有优异的耐蚀刻性，耐热性和粘附性，而且在制备高集成半导体器件的微电路的远红外区域中使用ArF光源的光刻工艺也是有用的。 构成：聚合物包含：（A）由式（I）和（II）表示的单体，其中R 1，R 2和R 4独立地为C 1-4烷基，C 1-4烷氧基，苯基; R3是氢，C1-20烷基，C1-20烷氧基，苯基，C1-20羟基烷基，C1-20烷氧基烷基，C6-30脂肪族环烃，C6-30脂肪族内酯; X是氢或羟基; 通过醇（III）与2-氯羰基-5-降冰片烯，丙烯酰氯和甲基丙烯酰氯反应合成的单体; 和（B）它们的聚合物。 光致抗蚀剂组合物包含聚合物; 和由式（IV），（V）和（VI）表示的光酸产生剂，其中R 1，R 2和R 4独立地是C 1-4烷基，C 1-4烷氧基，苯基; R3是氢，C1-20烷基，C1-20烷氧基，苯基，C1-20羟基烷基，C1-20烷氧基烷基，C6-30脂肪族环烃，C6-30脂肪族内酯; n为聚合度值1000; x和y是摩尔比，其中x + y <= 1。 光致抗蚀剂通过（I）和（II）的化合物与无水马来酸的自聚合或共聚的步骤制备; 并将聚合物和0.01-20重量％的光酸产生剂（基于聚合物）溶解在溶剂中。 光致抗蚀剂的图案通过以下步骤制备：（a）通过将光致抗蚀剂组合物涂布在基材上来制备光致抗蚀剂层; （b）将光致抗蚀剂层曝光; （c）对曝光的光致抗蚀剂进行热处理，（d）通过开发（c）的产物获得所需的图案。