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Patent Agency Ranking
公开(公告)号：KR1020000027428A
公开(公告)日：2000-05-15
申请号：KR1019980045348
申请日：1998-10-28
Applicant: 한국과학기술원 , 삼성엔지니어링 주식회사
IPC: C02F3/28
Abstract: PURPOSE: A reactor is supplied for managing waste water, which can be used in management for industrial waste water including sulfate and heavy metal. CONSTITUTION: The device is used for neutralization of acidic waste water, removal of solidity, reduction of sulfate, analysis of organic acid, production of methane, and removal of metal sulfate and gas. Wastewater including sulfate and heavy metal is usually treated in anaerobic condition, and this process costs a lot of money and area. The device is consisted of limestone layer, a first settling part for removing of particle which has high density, analysis part of sulfate, methane production part, separation slope for settled matter, and a second settling part. The anaerobic reactor uses neutralization of dissolved sulfate and limestone. The analysis of sulfate, removal of organic acid, and settlement of dissolved heavy metal are controlled by just one reactor.
Abstract translation: 目的：提供反应堆管理废水，可用于管理包括硫酸盐和重金属在内的工业废水。 规定：该装置用于中和酸性废水，去除固体，减少硫酸盐，分析有机酸，生产甲烷，除去金属硫酸盐和气体。 废水包括硫酸盐和重金属通常在厌氧条件下处理，这个过程花费了大量的资金和面积。 该装置由石灰石层，用于除去高密度颗粒的第一沉降部分，硫酸盐分析部分，甲烷生产部分，沉降物质的分离斜面和第二沉降部分组成。 厌氧反应器使用溶解硫酸盐和石灰石的中和。 硫酸盐的分析，有机酸的去除和溶解的重金属的沉降仅由一个反应器控制。
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公开(公告)号：KR1020120112924A
公开(公告)日：2012-10-12
申请号：KR1020110030521
申请日：2011-04-04
Applicant: 한국과학기술원
CPC classification number: G03F7/0002 , C09K11/00 , B82Y10/00 , C01B32/182
Abstract: PURPOSE: A manufacturing method of graphene quantum dots is provided to manufacture graphene quantum dots of a constant size by applying a block copolymer self-assembling process, thereby capable of improving an existing broad PL spectrum performance. CONSTITUTION: A manufacturing method of graphene quantum dots comprises: a step(S1) of spreading a block copolymer on a material layer consisting of a mono-layered graphene; a step(S2) of forming a self-assembled structure of a several to dozens nano meters on the material layer by heat-treating the block copolymer and phase separation; and a step(S3) of etching the material layer by using the self-assembled structure as a mask. [Reference numerals] (S1) Spreading a block copolymer on a monolayered graphene; (S2) Forming a self-assembled structure by heat-treating the block copolymer; (S3) Etching the monolayer by using the self-assembled structure as a mask
Abstract translation: 目的：提供石墨烯量子点的制造方法，通过应用嵌段共聚物自组装工艺制造具有恒定尺寸的石墨烯量子点，从而能够改善现有的广泛的PL光谱性能。 构成：石墨烯量子点的制造方法包括：将嵌段共聚物扩散到由单层石墨烯构成的材料层上的工序（S1） 通过热处理嵌段共聚物和相分离，在材料层上形成数十纳米的自组装结构的步骤（S2）; 以及通过使用自组装结构作为掩模来蚀刻材料层的步骤（S3）。 （S1）在单层石墨烯上扩散嵌段共聚物; （S2）通过热处理嵌段共聚物形成自组装结构; （S3）使用自组装结构作为掩模蚀刻单层
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公开(公告)号：KR1020130143417A
公开(公告)日：2013-12-31
申请号：KR1020120066966
申请日：2012-06-21
Applicant: 엘지디스플레이 주식회사 , 한국과학기술원
IPC: H01L21/027
CPC classification number: H01L21/0273 , B82B1/001 , B82B3/0014 , B82B3/0019
Abstract: A nano transfer printing method according to an embodiment of the present invention includes the steps of: coating an elastic mold including a surface pattern with a block copolymer; forming a polymer thin film with a self-assembly pattern by annealing the block copolymer to induce self-assembly; printing the polymer thin film with the self-assembly pattern on the substrate; and removing the polymer thin film except the self-assembly pattern and forming an oxidation pattern by oxidizing the self-assembly pattern.
Abstract translation: 根据本发明实施例的纳米转印印刷方法包括以下步骤：用嵌段共聚物涂布包括表面图案的弹性模具; 通过退火嵌段共聚物以自组装形成具有自组装图案的聚合物薄膜; 在衬底上印刷具有自组装图案的聚合物薄膜; 除去自组装图案以外的聚合物薄膜，通过氧化自组装图案形成氧化图案。
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公开(公告)号：KR101333057B1
公开(公告)日：2013-11-26
申请号：KR1020110030521
申请日：2011-04-04
Applicant: 한국과학기술원
CPC classification number: G03F7/0002
Abstract: 본 발명에 따른 그래핀 양자점 제조 방법에서는 블록 공중합체 자기조립 공정을 적용함으로써 일정한 크기의 그래핀 양자점 제조가 가능하여 기존의 넓은 PL 스펙트럼 특성을 개선할 수 있다. 그래핀 양자점의 크기 제어가 가능함에 따라 쉽게 빛의 파장을 제어할 수 있고 RGB 컬러 구현이 되어, 고성능의 차세대 디스플레이로의 응용이 될 수 있다. 그리고, 색 재현율 및 빛의 밝기가 뛰어난 그래핀 양자점을 생산할 수 있다.
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公开(公告)号：KR100277018B1
公开(公告)日：2001-01-15
申请号：KR1019980045348
申请日：1998-10-28
Applicant: 한국과학기술원 , 삼성엔지니어링 주식회사
IPC: C02F3/28
Abstract: 본 발명은 폐수처리용 혐기성 반응기에 관한 것이다.
본 발명은 석회석에 의한 산성 폐수의 중화 및 고형물 제거, 황산염 환원, 유기산 분해 및 메탄 생성, 수불용성 금속 황화물 및 가스 제거와 같은 일련의 폐수 처리 공정을 하나의 반응기에서 수행함으로써 처리공정을 혁신적으로 단순화하여 부대 비용을 절감할 수 있을 뿐만 아니라 폐수의 혐기성 처리에 필요한 미생물의 생장조건을 안정적으로 유지할 수 있어 황산염 및 중금속을 함유한 산업폐수의 효율적인 처리가 가능하다.
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