公开(公告)号：KR100842871B1

公开(公告)日：2008-07-03

申请号：KR1020070013465

申请日：2007-02-09

Applicant: 한국과학기술원

Inventor： 김봉수 ,  서관용 ,  싯다르타바라다즈

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L21/02603 ,  B82Y40/00 ,  C01G51/00 ,  C01P2004/16 ,  H01L21/205

Abstract: A manufacturing method of metal silicide nanowire and a metal silicide nanowire manufactured thereby are provided to obtain high quality monocrystallic nanowire which is adequate for various applications in the field of nano-element in a simple process by employing vapor-phase transport process. A manufacturing method of metal silicide nanowire comprises steps of: a) placing a silicon substrate(31) on the rear end(12) of a reaction passage(10), and putting metal precursor in the fore end(11) of the reaction passage; b) forming a flow of inert gas from the fore end to the rear end of the reaction passage; c) maintaining the temperature of the fore end so as to evaporate the metal precursor while maintaining the temperature of the rear end so as to decompose the metal precursor; and d) building metal silicide nanowire on the silicon substrate by decomposition of the evaporated halogenated metal precursor on the flowing of the inert gas forward to the rear end of the reaction passage. The reaction passage has the fore end and the rear end, which are independently equipped with a heating and a temperature control equipment(21,22), respectively. The reaction passage is composed of quartz, and the passage also has a boat-shaped vessel(33) of alumina for putting the metal precursor into the center of the fore end, and a silicon substrate(31) at the center of the rear end. The reaction passage is maintained at 100 torr to an ambient pressure. The metal precursor is selected from compounds represented by formula 1 of MXn, wherein M is selected from Co, Fe and Cr, X is selected from F, Cl, Br and I, and n is 2 or 3. The metal silicide nanowire is selected from monocrystallic cobalt silicide, iron silicide and chromium silicide nanowires.

Abstract translation: 提供了由此制造的金属硅化物纳米线和金属硅化物纳米线的制造方法，以通过采用气相输送工艺在简单的工艺中获得高质量的单晶纳米线，其适用于纳米元件领域的各种应用。 金属硅化物纳米线的制造方法包括以下步骤：a）将硅衬底（31）放置在反应通道（10）的后端（12）上，并将金属前体放置在反应通道的前端（11） ; b）从反应通道的前端到后端形成惰性气体流; c）保持前端的温度以使金属前体蒸发，同时保持后端的温度以分解金属前体; 以及d）通过将惰性气体向前流动到反应通道的后端而蒸发的卤化金属前体分解，在硅衬底上构建金属硅化物纳米线。 反应通道的前端和后端分别独立地配有加热和温度控制设备（21,22）。 反应通道由石英组成，通道还具有用于将金属前体放入前端中心的氧化铝舟形容器（33），并且在后端中心的硅衬底（31） 。 将反应通道保持在100乇至环境压力。 金属前体选自MXn的式1表示的化合物，其中M选自Co，Fe和Cr，X选自F，Cl，Br和I，n为2或3.金属硅化物纳米线被选择 来自单晶硅化钴，硅化铁和硅化铬纳米线。

公开(公告)号：KR100845342B1

公开(公告)日：2008-07-10

申请号：KR1020070049752

申请日：2007-05-22

Applicant: 한국과학기술원

Inventor： 김봉수 ,  인준호 ,  서관용 ,  싯다르타바라다즈

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: C01G51/006 ,  B82Y30/00 ,  B82Y40/00 ,  C01G49/00 ,  C01P2004/16

Abstract: A method for manufacturing iron cobalt silicide nanowires is provided to produce high-purity and high-quality single crystal iron cobalt silicide(Fe_(1-x)Co_xSi) having physical properties suitable for applications to nano devices. An iron cobalt silicide single crystal nanowire has a composition of Fe_(1-x)Co_xSi, wherein x is a value ranging from 0.01 to 0.99. A method for manufacturing the iron cobalt silicide single crystal nanowire includes a step of heat-treating a precursor placed at the front end part of a reactor and a silicon substrate placed at the rear end part of the reactor under an inert gas atmosphere to form the Fe_(1-x)Co_xSi nanowire on the silicon substrate, wherein the precursor is a mixture of cobalt halide and iron halide. Further, the nanowire is ferromagnetic material and has helical spin order.

Abstract translation: 提供了一种制造铁氰化钴纳米线的方法，以生产具有适用于纳米器件应用的物理性能的高纯度和高质量的单晶铁钴硅化物（Fe_（1-x）Co_xSi）。 铁氰化钴单晶纳米线具有Fe_（1-x）Co_xSi的组成，其中x为0.01-0.99的范围。 一种制造铁氰化钴单晶纳米线的方法包括在惰性气体气氛下，将放置在反应器前端部的前驱物和置于反应器后端的硅基板进行热处理的工序，形成 在硅衬底上的Fe_（1-x）Co_xSi纳米线，其中前体是卤化钴和卤化铁的混合物。 此外，纳米线是铁磁材料并具有螺旋旋转顺序。