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公开(公告)号：KR1020110024402A
公开(公告)日：2011-03-09
申请号：KR1020090082389
申请日：2009-09-02
Applicant: 한국과학기술원
IPC: B82B3/00
CPC classification number: B82B3/0095 , B82Y40/00 , C01B33/113 , C30B1/02
Abstract: PURPOSE: A method for manufacturing metal silicide nanowire is provided to simply obtain plenty of the metal silicide nanowire and adjusting the composition of the metal silicide nanowire in a wide range. CONSTITUTION: Single crystalline silicon metal nanowire(100) is synthesized using a vapor-phase transporting method. The synthesized silicon metal nanowire is annealed under oxygen atmosphere, and a silicon oxide layer(110) is formed on the surface of the silicon metal nanowire. The silicon oxide layer is eliminated using a wet etching method. A metal-rich single crystalline silicon metal nanowire, which is an intermetallic compound or a solid solution is prepared.
Abstract translation: 目的：提供一种制造金属硅化物纳米线的方法，以简单地获得大量的金属硅化物纳米线，并且在宽范围内调节金属硅化物纳米线的组成。 构成：使用气相输送法合成单晶硅金属纳米线（100）。 合成的硅金属纳米线在氧气氛下进行退火，在硅金属纳米线的表面上形成氧化硅层（110）。 使用湿式蚀刻方法除去氧化硅层。 制备富金属的单晶硅金属纳米线，其是金属间化合物或固溶体。
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2.发明授权
公开(公告)号：KR100845342B1
公开(公告)日：2008-07-10
申请号：KR1020070049752
申请日：2007-05-22
Applicant: 한국과학기술원
CPC classification number: C01G51/006 , B82Y30/00 , B82Y40/00 , C01G49/00 , C01P2004/16
Abstract: A method for manufacturing iron cobalt silicide nanowires is provided to produce high-purity and high-quality single crystal iron cobalt silicide(Fe_(1-x)Co_xSi) having physical properties suitable for applications to nano devices. An iron cobalt silicide single crystal nanowire has a composition of Fe_(1-x)Co_xSi, wherein x is a value ranging from 0.01 to 0.99. A method for manufacturing the iron cobalt silicide single crystal nanowire includes a step of heat-treating a precursor placed at the front end part of a reactor and a silicon substrate placed at the rear end part of the reactor under an inert gas atmosphere to form the Fe_(1-x)Co_xSi nanowire on the silicon substrate, wherein the precursor is a mixture of cobalt halide and iron halide. Further, the nanowire is ferromagnetic material and has helical spin order.
Abstract translation: 提供了一种制造铁氰化钴纳米线的方法，以生产具有适用于纳米器件应用的物理性能的高纯度和高质量的单晶铁钴硅化物（Fe_（1-x）Co_xSi）。 铁氰化钴单晶纳米线具有Fe_（1-x）Co_xSi的组成，其中x为0.01-0.99的范围。 一种制造铁氰化钴单晶纳米线的方法包括在惰性气体气氛下，将放置在反应器前端部的前驱物和置于反应器后端的硅基板进行热处理的工序，形成 在硅衬底上的Fe_（1-x）Co_xSi纳米线，其中前体是卤化钴和卤化铁的混合物。 此外，纳米线是铁磁材料并具有螺旋旋转顺序。
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公开(公告)号：KR100842871B1
公开(公告)日：2008-07-03
申请号：KR1020070013465
申请日：2007-02-09
Applicant: 한국과학기술원
CPC classification number: H01L21/02603 , B82Y40/00 , C01G51/00 , C01P2004/16 , H01L21/205
Abstract: A manufacturing method of metal silicide nanowire and a metal silicide nanowire manufactured thereby are provided to obtain high quality monocrystallic nanowire which is adequate for various applications in the field of nano-element in a simple process by employing vapor-phase transport process. A manufacturing method of metal silicide nanowire comprises steps of: a) placing a silicon substrate(31) on the rear end(12) of a reaction passage(10), and putting metal precursor in the fore end(11) of the reaction passage; b) forming a flow of inert gas from the fore end to the rear end of the reaction passage; c) maintaining the temperature of the fore end so as to evaporate the metal precursor while maintaining the temperature of the rear end so as to decompose the metal precursor; and d) building metal silicide nanowire on the silicon substrate by decomposition of the evaporated halogenated metal precursor on the flowing of the inert gas forward to the rear end of the reaction passage. The reaction passage has the fore end and the rear end, which are independently equipped with a heating and a temperature control equipment(21,22), respectively. The reaction passage is composed of quartz, and the passage also has a boat-shaped vessel(33) of alumina for putting the metal precursor into the center of the fore end, and a silicon substrate(31) at the center of the rear end. The reaction passage is maintained at 100 torr to an ambient pressure. The metal precursor is selected from compounds represented by formula 1 of MXn, wherein M is selected from Co, Fe and Cr, X is selected from F, Cl, Br and I, and n is 2 or 3. The metal silicide nanowire is selected from monocrystallic cobalt silicide, iron silicide and chromium silicide nanowires.
Abstract translation: 提供了由此制造的金属硅化物纳米线和金属硅化物纳米线的制造方法，以通过采用气相输送工艺在简单的工艺中获得高质量的单晶纳米线，其适用于纳米元件领域的各种应用。 金属硅化物纳米线的制造方法包括以下步骤：a）将硅衬底（31）放置在反应通道（10）的后端（12）上，并将金属前体放置在反应通道的前端（11） ; b）从反应通道的前端到后端形成惰性气体流; c）保持前端的温度以使金属前体蒸发，同时保持后端的温度以分解金属前体; 以及d）通过将惰性气体向前流动到反应通道的后端而蒸发的卤化金属前体分解，在硅衬底上构建金属硅化物纳米线。 反应通道的前端和后端分别独立地配有加热和温度控制设备（21,22）。 反应通道由石英组成，通道还具有用于将金属前体放入前端中心的氧化铝舟形容器（33），并且在后端中心的硅衬底（31） 。 将反应通道保持在100乇至环境压力。 金属前体选自MXn的式1表示的化合物，其中M选自Co，Fe和Cr，X选自F，Cl，Br和I，n为2或3.金属硅化物纳米线被选择 来自单晶硅化钴，硅化铁和硅化铬纳米线。
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公开(公告)号：KR1020110118960A
公开(公告)日：2011-11-02
申请号：KR1020100038386
申请日：2010-04-26
Applicant: 한국과학기술원
CPC classification number: C01G49/00 , B82Y20/00 , B82Y40/00 , C01P2004/16 , H01L31/035227
Abstract: PURPOSE: A method for manufacturing metal silicide single crystalline nano-wires and the metal silicide single crystalline nano-wires are provided to adjust the short axial diameters of the nano-wires and secure free-standing properties under a catalyst-free condition and a template-free condition. CONSTITUTION: Iron silicide nano-wires are formed on a substrate by thermally treating a first precursor, a second precursor, and a substrate under an inert gas atmosphere. The first precursor is arranged at the front end part of a reactor and contains iron halide. The second precursor is arranged at the rear end part of the reactor and contains silicon and carbon. The substrate is arranged at the rear end part of the reactor. The relative growth speed of the short axial direction and the long axial direction of the iron silicide nano-wires is controlled according to the weight ratio of the silicon and the carbon. The short axial diameters of the iron silicide nano-wires are controlled without the change of a composition and a crystalline structure according to the weight ratio of the silicon and the carbon.
Abstract translation: 目的：提供一种制造金属硅化物单晶纳米线和金属硅化物单晶纳米线的方法，以调节纳米线的短轴向直径，并确保无催化剂条件下的独立性能和模板 - 自由条件。 构成：通过在惰性气体气氛下热处理第一前体，第二前体和基底，在基底上形成硅化铁纳米线。 第一前驱体设置在反应器的前端，并含有卤化铁。 第二前体设置在反应器的后端部分并且包含硅和碳。 基板布置在反应器的后端部分。 根据硅和碳的重量比，控制硅化铁纳米线的短轴方向和长轴方向的相对生长速度。 根据硅和碳的重量比，控制硅化铁纳米线的短轴向直径而不改变组成和结晶结构。
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Patent Agency Ranking
公开(公告)号：KR101116697B1
公开(公告)日：2012-02-22
申请号：KR1020090082389
申请日：2009-09-02
Applicant: 한국과학기술원
IPC: B82B3/00
Abstract: 본 발명은 조성을 포함한 상(phase)을 제어할 수 있는 규화금속 나노와이어의 제조방법에 관한 것으로, 상세하게, 본 발명에 따른 제조방법은 단결정체의 규화금속 나노와이어(I)를 산화 분위기에서 어닐링(annealing)하여 상기 나노와이어(I) 표면에 산화규소층을 형성한 후, 상기 산화규소층을 제거하여 단결정체의 금속-리치(metal-rich)한 규화금속 나노와이어어(II)를 제조하는 특징이 있다.
규화금속, 나노와이어, 조성, 상, 산화규소, 준안정-
公开(公告)号：KR100904204B1
公开(公告)日：2009-06-25
申请号：KR1020070067830
申请日：2007-07-06
Applicant: 한국과학기술원
CPC classification number: B22F1/0025 , B22F1/02 , B22F9/28 , B82Y30/00 , C30B25/00 , C30B29/02 , C30B29/605
Abstract: 본 발명은 할로겐화금속을 선구물질로 이용한 강자성 금속 단결정 나노와이어의 제조방법 및 강자성 금속 단결정 나노와이어를 제공하며, 상세하게는 반응로의 전단부에 위치시킨 선구물질과 반응로의 후단부에 위치시킨 기판을 불활성 기체가 흐르는 분위기에서 열처리하여 상기 기판 상에 강자성 금속 단결정 나노와이어를 형성시키는 제조 방법 및 본 발명의 제조 방법에 의해 제조된 강자성 금속 단결정 나노와이어를 제공한다.
본 발명의 제조방법은 촉매를 사용하지 않는 기상이송법을 이용하여 강자성 금속 단결정 나노와이어를 제조할 수 있어 그 공정이 간단하고 재현성이 있으며, 제조된 나노와이어가 결함 및 불순물을 포함하지 않는 완벽한 단결정 상태의 고순도 고품질 강자성 금속 나노와이어인 장점을 가지며, 기판 상에 응집되어 있지 않은 균일한 크기의 강자성 금속 나노와이어를 대량생산할 수 있는 장점이 있다. 또한 산화방지막이 표면에 형성되어 강자성 금속의 산화가 방지된 안정한 강자성 금속 나노와이어인 장점이 있다.
강자성 금속(Ferromagnetic metal), 나노와이어(nanowire), 단결정 (Single-crystalline), 자성(magnetic), Co, Ni, Fe-
公开(公告)号：KR1020090003975A
公开(公告)日：2009-01-12
申请号：KR1020070067830
申请日：2007-07-06
Applicant: 한국과학기술원
CPC classification number: B22F1/0025 , B22F1/02 , B22F9/28 , B82Y30/00 , C30B25/00 , C30B29/02 , C30B29/605
Abstract: A ferromagnetism monocrystal metal nano wire not cohered on a mono crystal substrate is provided to have high quality and high purity, to include no deformity and impurity and to be mass-produced into a uniform-size. A ferromagnetism monocrystal metal nano wire is manufactured using a vapor phase growth in a noncatalytic condition using a precursor including a metal halide. A passivation layer is formed on a surface of the ferromagnetic metal monocrystal nanowire and a silica film. The silica film has a thickness of 1 to 5 nm. The ferromagnetism monocrystal metal nano wire is Co, Ni or Fe. The ferromagnetic metal monocrystal nanowire is a Co monocrystal nanowire of a hexagonal closepacked structure. The silica film is formed on a surface of the Co monocrystal nanowire.
Abstract translation: 提供未结合在单晶基板上的铁磁性单晶金属纳米线，以具有高质量和高纯度，不包括畸变和杂质，并且大量生产成均匀尺寸。 使用包含金属卤化物的前体，在非催化条件下使用气相生长制造铁磁性单晶金属纳米线。 在强磁性金属单晶纳米线的表面和二氧化硅膜上形成钝化层。 二氧化硅膜的厚度为1〜5nm。 铁磁性单晶金属纳米线是Co，Ni或Fe。 铁磁金属单晶纳米线是六边形封装结构的Co单晶纳米线。 二氧化硅膜形成在Co单晶纳米线的表面上。
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公开(公告)号：KR101200864B1
公开(公告)日：2012-11-13
申请号：KR1020100038386
申请日：2010-04-26
Applicant: 한국과학기술원
Abstract: 본 발명은 무-촉매, 무-템플레이트(template-free) 조건으로, 단축 직경의 길이가 엄밀하게 조절되며 기판에 대해 일정한 방향성을 가지며, 기판 상 독립적으로 서 있는(free-standing) 규화철 나노와이어의 제조방법 및 이를 이용하여 제조된 규화철 나노와이어에 관한 것으로, 상세하게, 본 발명에 따른 제조방법은 반응로의 전단부에 위치한 할로겐화철을 함유하는 제1선구물질, 상기 반응로의 후단부에 위치한 규소(Si) 및 탄소(C)를 함유하는 제2선구물질, 상기 반응로의 후단부에 위치한 기판을 불활성 기체가 흐르는 분위기에서 열처리하여 상기 기판 상에 규화철 나노와이어가 제조되며, 상기 제2선구물질의 규소:탄소의 질량비에 의해 상기 기판상 형성되는 상기 규화철 나노와이어의 단축 방향과 장축 방향의 상대적 성장 속도가 제어되는 특징이 있다.
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公开(公告)号：KR100836890B1
公开(公告)日：2008-06-11
申请号：KR1020070033611
申请日：2007-04-05
Applicant: 한국과학기술원
CPC classification number: C01G9/02 , B82Y30/00 , B82Y40/00 , C01P2004/16 , H01J1/304
Abstract: A method for manufacturing zinc oxide nanowires is provided to produce single crystal zinc oxide nanowires having uniform size, shape, and density vertically grown on an ITO substrate using a chemical vapor deposition method. A method for manufacturing zinc oxide nanowires on an ITO substrate includes the steps of: physically covering the ITO substrate with a metal foil having a macro hole; mixing ZnO and Zn powders; and manufacturing the zinc oxide nanowires by heat-treating the ITO glass covered with the metal foil and a crucial containing the ZnO/Zn mixture powder in an atmosphere of inert gas and oxygen gas. The ZnO and Zn powders are mixed in a weight ratio of ZnO : Zn ranging from 1:0.2 to 1:5.
Abstract translation: 提供了一种用于制造氧化锌纳米线的方法，以使用化学气相沉积法在ITO基板上垂直生长具有均匀尺寸，形状和密度的单晶氧化锌纳米线。 在ITO基板上制造氧化锌纳米线的方法包括以下步骤：用具有宏观孔的金属箔物理覆盖ITO基板; 混合ZnO和Zn粉末; 并且通过对被金属箔覆盖的ITO玻璃进行热处理并且在惰性气体和氧气气氛中含有ZnO / Zn混合物粉末的关键性来制造氧化锌纳米线。 将ZnO和Zn粉末以1:0.2至1:5的ZnO:Zz的重量比混合。
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