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公开(公告)号：KR101857442B1
公开(公告)日：2018-05-15
申请号：KR1020170046689
申请日：2017-04-11
Applicant: 한국에너지기술연구원 , 한국과학기술원
Abstract: 본발명은 SnSe 열전소재의저항특성을향상시킬수 있는메탈라이징방법에관한것으로, SnSe 열전소재의표면에메탈라이징을수행하는방법으로서, SnSe 열전소재의표면에 Ag층과 Ti층이순차로적층된메탈라이징층을형성하는것을특징으로한다. 본발명은, SnSe의저항특성을향상시키는금속층과 Sn 확산을방지하는금속층을구비한다층구조로메탈라이징함으로써, SnSe 열전소재와전극사이의접촉저항을낮추면서성능은유지할수 있는뛰어난효과가있다. 최종적으로, 전극과의저항문제로인하여열전발전모듈에사용되지못하였던 SnSe 열전소재를열전발전모듈에적용할수 있는뛰어난효과가있다.
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公开(公告)号：KR101200870B1
公开(公告)日：2012-11-13
申请号：KR1020100039908
申请日：2010-04-29
Applicant: 한국과학기술원
Abstract: 본 발명은 게르마늄화 코발트 나노와이어 및 그 제조방법에 관한 것으로, 본 발명에 따른 게르마늄화 코발트 나노와이어는 기판 위에 독립적으로 서있는 (freestanding) 형태로 일정한 방향성을 가지며, 단사정계 구조의 게르마늄화 코발트 나노와이어이며, 상온 이상의 큐리 온도를 가지며, 300K에서 강자성 특성을 갖는 게르마늄화 코발트 나노와이어인 특징이 있고, 강한 자기 이방성을 가지며, 나노와이어의 장축 방향이 자화 용이축(magnetic easy axis)인 특징을 가져, 초고속, 대용량, 저전력, 저비용의 차세대 3차원 메모리 소자(memory device)의 개발에 응용할 수 있을 것으로 기대된다.
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公开(公告)号：KR1020110120479A
公开(公告)日：2011-11-04
申请号：KR1020100039908
申请日：2010-04-29
Applicant: 한국과학기술원
Abstract: PURPOSE: Cobalt germanide monoclinic single crystal nano-wires and a method for manufacturing the same are provided to massively manufacture the nano-wires for a short period of time under a non-catalytic condition and a non-template condition. CONSTITUTION: Cobalt germanide monoclinic single crystal nano-wires are ferromagnetic substances at the absolute temperature of 300K. The nano-wires include a magnetic anisotropic characteristic. The longitudinal axis of the nano-wires is a magnetic easy axis. If an external magnetic field is applied to the longitudinal axis direction of the nano-wires at the 300K, the nano-wires are saturated at the 8000Oe or more of the magnetic field. If an external magnetic field is applied to the longitudinal axis direction of the nano-wires at the 300K, the nano-wires include 10-40Oe of coercivity. If an external magnetic field is applied to the short axis direction of the nano-wires at the 300K, the nano-wires include 90-120Oe of coercivity. The nano-wires independently stand on a substrate.
Abstract translation: 目的：提供锗锗单斜晶单晶纳米线及其制造方法，用于在非催化条件和非模板条件下短时间内大量制造纳米线。 规定：锗锗单斜晶纳米线是绝对温度为300K的铁磁性物质。 纳米线包括磁各向异性特征。 纳米线的纵向轴线是易磁化轴。 如果在300K处对纳米线的纵轴方向施加外部磁场，那么纳米线在8000Oe以上的磁场饱和。 如果在300K处将外部磁场施加到纳米线的纵轴方向，则纳米线包括10-40O的矫顽力。 如果在300K处对纳米线的短轴方向施加外部磁场，则纳米线的矫顽力为90〜120Oe。 纳米线独立地置于基底上。
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公开(公告)号：KR1020110075865A
公开(公告)日：2011-07-06
申请号：KR1020090132434
申请日：2009-12-29
Applicant: 한국과학기술원
CPC classification number: C01G17/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , H01J1/304 , H01J9/025 , H01L21/02603 , H01L29/0669
Abstract: PURPOSE: Mono crystalline iron germanide-based nano-wire and a method for manufacturing the same are provided to improve purity and prevent the generation of crystalline defects using a vapor-phase transporting process without a catalyst. CONSTITUTION: Mono crystalline iron germanide-based nano-wire is manufactured on a substrate by thermally vaporizing precursors containing germanium and iron halide. The nano-wire is formed into a hexagonal structure, and the aspect ratio of the nano-wire is between 20 and 300. A method for manufacturing the nano-wire includes the following: A first precursor and a second precursor are prepared and are thermally processed under inert gas atmosphere. The first precursor is arranged at the front side of a reaction furnace and contains iron halide. The second precursor is arranged at the rear side of the reaction furnace and contains germanium and carbon.
Abstract translation: 目的：提供单晶锗化锗基纳米线及其制造方法，以提高纯度并防止在没有催化剂的情况下使用气相输送过程产生结晶缺陷。 构成：通过将含有锗和卤化铁的前体进行热蒸发，在基底上制造单晶锗化锗基纳米线。 纳米线形成六边形结构，纳米线的纵横比在20和300之间。纳米线的制造方法包括：制备第一前体和第二前体，并且是热的 在惰性气体环境下进行处理。 第一前驱体设置在反应炉的前侧，并含有卤化铁。 第二前驱体设置在反应炉的后侧，并含有锗和碳。
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Patent Agency Ranking
公开(公告)号：KR100836890B1
公开(公告)日：2008-06-11
申请号：KR1020070033611
申请日：2007-04-05
Applicant: 한국과학기술원
CPC classification number: C01G9/02 , B82Y30/00 , B82Y40/00 , C01P2004/16 , H01J1/304
Abstract: A method for manufacturing zinc oxide nanowires is provided to produce single crystal zinc oxide nanowires having uniform size, shape, and density vertically grown on an ITO substrate using a chemical vapor deposition method. A method for manufacturing zinc oxide nanowires on an ITO substrate includes the steps of: physically covering the ITO substrate with a metal foil having a macro hole; mixing ZnO and Zn powders; and manufacturing the zinc oxide nanowires by heat-treating the ITO glass covered with the metal foil and a crucial containing the ZnO/Zn mixture powder in an atmosphere of inert gas and oxygen gas. The ZnO and Zn powders are mixed in a weight ratio of ZnO : Zn ranging from 1:0.2 to 1:5.
Abstract translation: 提供了一种用于制造氧化锌纳米线的方法，以使用化学气相沉积法在ITO基板上垂直生长具有均匀尺寸，形状和密度的单晶氧化锌纳米线。 在ITO基板上制造氧化锌纳米线的方法包括以下步骤：用具有宏观孔的金属箔物理覆盖ITO基板; 混合ZnO和Zn粉末; 并且通过对被金属箔覆盖的ITO玻璃进行热处理并且在惰性气体和氧气气氛中含有ZnO / Zn混合物粉末的关键性来制造氧化锌纳米线。 将ZnO和Zn粉末以1:0.2至1:5的ZnO:Zz的重量比混合。
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7.发明授权
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8.发明授权
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公开(公告)号：KR101827732B1
公开(公告)日：2018-02-12
申请号：KR1020170046690
申请日：2017-04-11
Applicant: 한국에너지기술연구원 , 한국과학기술원
IPC: B23K1/00 , B23K3/08 , B23K31/12 , B23K101/36
CPC classification number: B23K1/0016 , B23K3/085 , B23K31/125 , B23K2101/36
Abstract: 본발명은열전소재의전극브레이징공정최적화방법에관한것으로, 열전소재와전극사이에브레이징필러를사용하여브레이징접합을수행하는과정에서, 승온되는온도및 접합대상물양단사이의저항을연속적으로측정하는단계; 측정된온도와저항을시간에따라배열하는단계; 및배열된온도변화및 저항변화를기준으로최적공정조건을산출하는단계를포함한다. 본발명은, 브레이징필러를사용하여열전소재에전극을브레이징접합할때에양단의저항을측정함으로써, 열전소재와전극및 브레이징필러에따른브레이징접합의최적공정을도출할수 있는효과가있다.
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