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公开(公告)号：KR100465914B1
公开(公告)日：2005-01-13
申请号：KR1020020016681
申请日：2002-03-27
Applicant: 한국과학기술원
IPC: B81B7/00
Abstract: PURPOSE: A method for fabricating a micro-sized driving device is provided to drive the micro-sized driving device with low operating voltage by allowing electrodes having a comb shape to have fine interval. CONSTITUTION: A substrate is firstly prepared. Then, a first oxide layer, a first silicon layer, a second oxide layer, a nitride layer and a third oxide layer are sequentially deposited on the substrate. A first electrode pattern is formed on the third oxide layer by using a photosensitive film. The third oxide layer, the nitride layer, the second oxide layer and the first silicon layer are etched along the first electrode pattern in order to expose the first oxide layer, thereby obtaining a first electrode having a plurality of fingers. An oxide layer is formed at a lateral portion of the first electrode. Then, a second electrode is formed by etching a fourth oxide layer and a second silicon layer formed on the second silicon layer. After that, the first oxide layer, the second oxide layer, the lateral oxide layer, the fourth oxide layer and the nitride layer are removed, thereby achieving a micro-sized driving device.
Abstract translation: 目的：提供一种用于制造微型驱动装置的方法，以通过使具有梳形形状的电极具有精细间隔来以低操作电压驱动微型驱动装置。 构成：首先准备基材。 然后，在衬底上顺序沉积第一氧化物层，第一硅层，第二氧化物层，氮化物层和第三氧化物层。 通过使用光敏膜在第三氧化物层上形成第一电极图案。 沿着第一电极图案蚀刻第三氧化物层，氮化物层，第二氧化物层和第一硅层以暴露第一氧化物层，由此获得具有多个指状物的第一电极。 氧化物层形成在第一电极的横向部分处。 然后，通过蚀刻形成在第二硅层上的第四氧化物层和第二硅层来形成第二电极。 之后，去除第一氧化物层，第二氧化物层，横向氧化物层，第四氧化物层和氮化物层，由此实现微尺寸驱动装置。
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公开(公告)号：KR1020020010162A
公开(公告)日：2002-02-04
申请号：KR1020000043255
申请日：2000-07-27
Applicant: 한국과학기술원
IPC: H01J1/304
Abstract: PURPOSE: A method for forming a fine interval using chemical mechanical polishing and a method for manufacturing a lateral FEA(field emission array) are provided to obtain an FEA having low voltage and high current driving characteristic and uniform field emission characteristic. CONSTITUTION: A lateral FEA is manufactured by sequentially forming a first silicon oxide film and a first silicon film on a substrate(210), injecting dopant to the first silicon film, forming a mesa type photosensitive pattern on the first silicon film, forming a first probe layer by etching the first silicon film to expose the first silicon oxide film, forming a second silicon oxide film on the first probe layer, forming a silicon film over the second silicon layer, injecting dopant to the second silicon layer, forming a second probe layer by chemically mechanically polishing the second silicon film to expose the second silicon oxide film, selectively removing the second silicon oxide layer to form a fine interval(A') between the first and the second probe layers(230a,250a), removing the first silicon oxide film under the side bottom of the first probe layer to form a first silicon oxide film pattern(220a), and forming metal wires(260) on the first and the second probe layers(230a,250a), respectively.
Abstract translation: 目的：提供使用化学机械抛光形成精细间隔的方法和用于制造横向FEA（场致发射阵列）的方法，以获得具有低电压和高电流驱动特性以及均匀的场发射特性的FEA。 构成：通过在基板（210）上依次形成第一氧化硅膜和第一硅膜，向第一硅膜注入掺杂剂，在第一硅膜上形成台面型感光图案，形成第一 通过蚀刻第一硅膜以暴露第一氧化硅膜，在第一探针层上形成第二氧化硅膜，在第二硅层上形成硅膜，向第二硅层注入掺杂剂，形成第二探针 层，通过化学机械抛光所述第二硅膜以暴露所述第二氧化硅膜，选择性地除去所述第二氧化硅层以在所述第一和第二探针层（230a，250a）之间形成细间隔（A'）， 在第一探针层的侧面底部形成氧化硅膜，以形成第一氧化硅膜图案（220a），并且在第一和第二探针层（230a，25）上形成金属线（260） 0a）。
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公开(公告)号：KR100368929B1
公开(公告)日：2003-01-24
申请号：KR1020000004974
申请日：2000-02-01
Applicant: 한국과학기술원
IPC: B41J2/05
Abstract: PURPOSE: A method for manufacturing a heating device and a method for manufacturing a heat spraying type ink jet print head are provided to obtain superior mechanical properties by utilizing a single crystal silicon island such as a single silicon pattern or an isolated substrate surface part as a heating resistance, thereby extending the lifespan of the heating resistance and reducing the number of protection layers surrounding the heating resistance. CONSTITUTION: A method for manufacturing a heat spraying type ink jet print head includes the steps of forming an impurity area(120a) on a surface of a heating part of a single crystal silicon substrate(110) with an impurity doping concentration higher than the substrate by the ion-injection method, forming a single crystal silicon film pattern on the impurity area with an impurity doping concentration lower than the impurity area, forming a porous silicon area in the impurity area only, forming a thermal oxidation film by oxidizing the whole surface and the porous silicon area, forming a thermal oxidation film pattern by patterning the thermal oxidation film to expose a predetermined area of the single crystal silicon film pattern and the substrate surface of a main ink supply part, forming heating electrodes(160a) and electro-plating electrodes(162a), forming an insulation pattern(165a) covering the heating electrodes, forming a plating seed layer(170) on the whole surface, forming a photosensitive film pattern(175a) having an opening part for exposing the plating seed layer, forming a plating layer pattern(180a) for exposing a predetermined area of the photosensitive film pattern, removing the substrate located in the main ink supply part and the electro-plating electrodes, and removing the plating seed layer and the photosensitive film pattern.
Abstract translation: 目的：提供一种用于制造加热装置的方法和用于制造热喷涂型喷墨打印头的方法，以通过利用诸如单个硅图案或隔离衬底表面部分的单晶硅岛作为 从而延长了加热电阻的寿命并减少了围绕加热电阻的保护层的数量。 用于制造热喷涂型喷墨打印头的方法包括以下步骤：在掺杂浓度高于衬底（110）的单晶硅衬底（110）的加热部分的表面上形成杂质区域（120a） 通过离子注入法在掺杂浓度低于杂质区域的杂质区域上形成单晶硅膜图案，仅在杂质区域中形成多孔硅区域，通过氧化整个表面来形成热氧化膜 通过对热氧化膜进行图案化而形成热氧化膜图案，以暴露单晶硅膜图案的预定区域和主墨水供应部分的基板表面;形成加热电极（160a） 电镀电极（162a），形成覆盖加热电极的绝缘图案（165a），在整个表面上形成电镀籽晶层（170），形成 具有用于暴露电镀籽晶层的开口部分的感光膜图案（175a），形成用于曝光感光膜图案的预定区域的电镀层图案（180a），去除位于主墨水供应部分中的基板和电 - 电镀电极，以及去除电镀种子层和光敏膜图案。
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公开(公告)号：KR100363298B1
公开(公告)日：2002-11-30
申请号：KR1020000028569
申请日：2000-05-26
Applicant: 한국과학기술원
IPC: H01J9/24
Abstract: 본 발명은 화학적 기계적 연마(Chemical-Mechanical-Polishing: CMP) 방법을 이용한 측면형 전계 방출 소자의 제조방법에 관한 것이다. 기존의 측면형 전계 방출 소자는 열적 스트레스 방법이나 전기적 스트레스를 이용하여 제조하기 때문에 전계 방출을 위한 간격의 재현성에 문제가 있는데 반하여, 본 발명에서는 전계 방출 소자 탐침의 간격이 산화막 두께에 의해 결정되기 때문에 초 미세 간격의 형성이 가능하다. 즉, 초 미세 간격이므로 전계 방출 소자의 구동 전압이 매우 낮고, 구동 전류가 커지게 된다. 또한, 제조 공정이 매우 간단하며, 넓은 면적도 제조가 가능해서 디스플레이로도 응용 가능한 장점을 가진다.
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公开(公告)号：KR1020010102636A
公开(公告)日：2001-11-16
申请号：KR1020000023620
申请日：2000-05-03
Applicant: 한국과학기술원
IPC: B41J2/145
CPC classification number: B41J2/1607 , B41J2/14072 , B41J2/15 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1643 , B41J2/2128 , B41J2202/13
Abstract: 본 발명은 고해상도 고속 프린팅이 가능한 잉크젯 프린트헤드를 제작하는 데 있어서 잉크방에 잉크를 공급하는 통로로 사용되는 잉크 공급로를 기판에 2개 이상 2차원 배열로 배치하여 2차원 노즐 배치를 구현하는 것에 대한 것이다. 본 발명에 의하면 기존의 1개 잉크 공급로 주변에 노즐을 일렬로 배치하는 방식에서 나타나는 집적도의 저하 문제점이 해결되어 기판에 매우 많은 수의 노즐을 집적할 수 있고 이에 따라 고속 프린팅이 요구되는 고해상도 프린트헤드의 구현이 현실화될 수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020010077293A
公开(公告)日：2001-08-17
申请号：KR1020000004974
申请日：2000-02-01
Applicant: 한국과학기술원
IPC: B41J2/05
Abstract: PURPOSE: A method for manufacturing a heating device and a method for manufacturing a heat spraying type ink jet print head are provided to obtain superior mechanical properties by utilizing a single crystal silicon island such as a single silicon pattern or an isolated substrate surface part as a heating resistance, thereby extending the lifespan of the heating resistance and reducing the number of protection layers surrounding the heating resistance. CONSTITUTION: A method for manufacturing a heat spraying type ink jet print head includes the steps of forming an impurity area(120a) on a surface of a heating part of a single crystal silicon substrate(110) with an impurity doping concentration higher than the substrate by the ion-injection method, forming a single crystal silicon film pattern on the impurity area with an impurity doping concentration lower than the impurity area, forming a porous silicon area in the impurity area only, forming a thermal oxidation film by oxidizing the whole surface and the porous silicon area, forming a thermal oxidation film pattern by patterning the thermal oxidation film to expose a predetermined area of the single crystal silicon film pattern and the substrate surface of a main ink supply part, forming heating electrodes(160a) and electro-plating electrodes(162a), forming an insulation pattern(165a) covering the heating electrodes, forming a plating seed layer(170) on the whole surface, forming a photosensitive film pattern(175a) having an opening part for exposing the plating seed layer, forming a plating layer pattern(180a) for exposing a predetermined area of the photosensitive film pattern, removing the substrate located in the main ink supply part and the electro-plating electrodes, and removing the plating seed layer and the photosensitive film pattern.
Abstract translation: 目的：提供一种制造加热装置的方法和制造喷射型喷墨打印头的方法，以通过利用诸如单一硅图案的单晶硅岛或隔离的基板表面部分来获得优异的机械性能，作为 耐热性，从而延长加热电阻的寿命并减少围绕加热电阻的保护层的数量。 构成：制造热喷射型喷墨打印头的方法包括以下步骤：在杂质掺杂浓度高于衬底的单晶硅衬底（110）的加热部分的表面上形成杂质区域（120a） 通过离子注入法，在杂质区域上形成杂质浓度低于杂质面积的单晶硅膜图案，仅在杂质区域形成多孔硅区域，通过氧化整个表面形成热氧化膜 和多孔硅区域，通过图案化热氧化膜形成热氧化膜图案以暴露单晶硅膜图案的预定区域和主供墨部分的基板表面，形成加热电极（160a）和电 - 电镀电极（162a），形成覆盖所述加热电极的绝缘图案（165a），在整个表面形成电镀种子层（170），形成 具有用于暴露电镀种子层的开口部的感光性膜图案（175a），形成用于使感光性膜图案的规定区域露出的镀层图案（180a），去除位于主供墨部中的基板， 电镀电极，去除电镀种子层和感光膜图案。
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公开(公告)号：KR100271138B1
公开(公告)日：2001-03-02
申请号：KR1019980001800
申请日：1998-01-22
Applicant: 한국과학기술원
IPC: B41J2/01
CPC classification number: B41J2/1626 , B41J2/1603 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1643
Abstract: PURPOSE: An inkjet printer head and method for manufacturing the same is provided to achieve improved productivity and reduce manufacturing cost by arranging a plurality of inkjet nozzles through a single metal plating process. CONSTITUTION: A method comprises a first step of preparing a substrate(201) having an embedded resistor(206) for heating an ink and a bottom metal layer(310) deposited onto the substrate; a second step of spin coating or film coating the photoresistor or polyimide onto the bottom metal layer through a photolithography process, and forming first and second photoresist molds; a third step of forming a preliminary metal barrier layer formed of a Ni-plating layer onto the bottom metal layer, such that the preliminary metal barrier layer has a height corresponding to the height of first and second photoresist molds, and forming a main metal barrier layer(508) in such a manner that the top of the first photoresist mold is completely covered by the Ni-plating layer and the top of the second photoresist mold is not completely covered by the overplating Ni-plating layer, so as to form an inkjet nozzle(207) having a predetermined size and shape; a fourth step of partially etching the first photoresist mold, second photoresist mold and the bottom metal layer, so as to form an ink flow channel(203) within the main metal barrier layer; and a fifth step of partially etching the substrate so as to form a main ink supply path(202) communicated to the ink flow channel.
Abstract translation: 目的：提供一种喷墨打印机头及其制造方法，以通过单个金属电镀工艺布置多个喷墨喷嘴来实现提高的生产率并降低制造成本。 构成：一种方法包括：制备具有用于加热油墨的嵌入式电阻器（206）和沉积在基板上的底部金属层（310）的基板（201）的第一步骤; 通过光刻工艺旋转涂布或将光敏电阻或聚酰亚胺膜涂覆到底部金属层上的第二步骤，以及形成第一和第二光致抗蚀剂模具; 在所述底部金属层上形成由Ni镀层形成的预备金属阻挡层的第三工序，使得所述预备金属阻挡层的高度对应于所述第一和第二光致抗蚀剂模具的高度，并且形成主金属屏障 层（508），使得第一光致抗蚀剂模具的顶部完全被镀镍层覆盖，并且第二光致抗蚀剂模具的顶部未被覆盖的镀镍层完全覆盖，以形成 具有预定尺寸和形状的喷墨喷嘴（207）; 第四步骤，部分地蚀刻第一光致抗蚀剂模具，第二光致抗蚀剂模具和底部金属层，以便在主金属阻挡层内形成墨流动通道（203）; 以及第五步骤，部分地蚀刻所述基板，以形成连通到所述墨流动通道的主墨供给路径（202）。
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公开(公告)号：KR1020030077791A
公开(公告)日：2003-10-04
申请号：KR1020020016681
申请日：2002-03-27
Applicant: 한국과학기술원
IPC: B81B7/00
CPC classification number: B81C1/00015 , B81B7/02 , B81B2201/03 , B81B2201/031 , B81B2203/0136 , B81C1/00349 , B81C1/00388 , B81C1/00555
Abstract: PURPOSE: A method for fabricating a micro-sized driving device is provided to drive the micro-sized driving device with low operating voltage by allowing electrodes having a comb shape to have fine interval. CONSTITUTION: A substrate is firstly prepared. Then, a first oxide layer, a first silicon layer, a second oxide layer, a nitride layer and a third oxide layer are sequentially deposited on the substrate. A first electrode pattern is formed on the third oxide layer by using a photosensitive film. The third oxide layer, the nitride layer, the second oxide layer and the first silicon layer are etched along the first electrode pattern in order to expose the first oxide layer, thereby obtaining a first electrode having a plurality of fingers. An oxide layer is formed at a lateral portion of the first electrode. Then, a second electrode is formed by etching a fourth oxide layer and a second silicon layer formed on the second silicon layer. After that, the first oxide layer, the second oxide layer, the lateral oxide layer, the fourth oxide layer and the nitride layer are removed, thereby achieving a micro-sized driving device.
Abstract translation: 目的：提供一种制造微型驱动装置的方法，通过允许具有梳形形状的电极具有精细的间隔来驱动具有低工作电压的微型驱动装置。 构成：首先制备底物。 然后，在衬底上依次沉积第一氧化物层，第一硅层，第二氧化物层，氮化物层和第三氧化物层。 通过使用感光膜在第三氧化物层上形成第一电极图案。 沿着第一电极图案蚀刻第三氧化物层，氮化物层，第二氧化物层和第一硅层，以暴露第一氧化物层，从而获得具有多个指状物的第一电极。 在第一电极的侧部形成氧化物层。 然后，通过蚀刻形成在第二硅层上的第四氧化物层和第二硅层来形成第二电极。 之后，去除第一氧化物层，第二氧化物层，横向氧化物层，第四氧化物层和氮化物层，从而实现微型驱动装置。
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公开(公告)号：KR100379613B1
公开(公告)日：2003-04-10
申请号：KR1020000043255
申请日：2000-07-27
Applicant: 한국과학기술원
IPC: H01J1/304
Abstract: PURPOSE: A method for forming a fine interval using chemical mechanical polishing and a method for manufacturing a lateral FEA(field emission array) are provided to obtain an FEA having low voltage and high current driving characteristic and uniform field emission characteristic. CONSTITUTION: A lateral FEA is manufactured by sequentially forming a first silicon oxide film and a first silicon film on a substrate(210), injecting dopant to the first silicon film, forming a mesa type photosensitive pattern on the first silicon film, forming a first probe layer by etching the first silicon film to expose the first silicon oxide film, forming a second silicon oxide film on the first probe layer, forming a silicon film over the second silicon layer, injecting dopant to the second silicon layer, forming a second probe layer by chemically mechanically polishing the second silicon film to expose the second silicon oxide film, selectively removing the second silicon oxide layer to form a fine interval(A') between the first and the second probe layers(230a,250a), removing the first silicon oxide film under the side bottom of the first probe layer to form a first silicon oxide film pattern(220a), and forming metal wires(260) on the first and the second probe layers(230a,250a), respectively.
Abstract translation: 目的：提供一种使用化学机械抛光形成精细间隔的方法和一种用于制造横向FEA（场发射阵列）的方法，以获得具有低电压和高电流驱动特性和均匀场发射特性的FEA。 构成：通过在衬底（210）上顺序形成第一氧化硅膜和第一硅膜，向第一硅膜注入掺杂剂，在第一硅膜上形成台面型光敏图案，形成第一硅膜 通过蚀刻第一硅膜以暴露第一氧化硅膜，在第一探针层上形成第二氧化硅膜，在第二硅层上形成硅膜，向第二硅层注入掺杂剂，形成第二探针 通过化学机械抛光第二硅膜以暴露第二氧化硅膜，选择性地去除第二氧化硅层以在第一探针层和第二探针层（230a，250a）之间形成精细间隔（A'），去除第一层 在所述第一探针层的侧底下形成氧化硅膜以形成第一氧化硅膜图案（220a）;以及在所述第一探针层和所述第二探针层（230a，25a）上形成金属线（260） 0a）。
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公开(公告)号：KR100324465B1
公开(公告)日：2002-02-27
申请号：KR1020000020596
申请日：2000-04-19
Applicant: 한국과학기술원
IPC: G01P15/08
Abstract: 본 발명은 측면 전계 방출을 이용한 2-축 가속도 센서 및 그 제조방법에 관한 것이다. 기존의 전계 방출을 이용한 가속도 센서는 수직형 전계 방출을 이용하기 때문에 1-축에 대한 가속도 밖에 측정 할 수 없었다. 그렇지만 본 발명에서는 측면 전계 방출을 이용하기 때문에 2-축에 대한 가속도를 동시에 측정할 수 있다. 화학 기계적 연마방식을 이용하여 탐침 간격이 매우 좁은 탐침 전극을 제조하기 때문에 낮은 전압에서 동작을 하게 되고 또한 기존의 높은 전압에 의한 정전기력을 이용하여 탐침을 가까이 가져오는 단계가 필요하지 않게 된다. 전계 방출을 이용하면 다른 방식의 가속의 감지 방법에 비해서 높은 감지도와 민감도를 가진다.
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