公开(公告)号：KR1020080067168A

公开(公告)日：2008-07-18

申请号：KR1020070004396

申请日：2007-01-15

Applicant: 엘지전자 주식회사 ,  한국과학기술원

Inventor： 이귀로 ,  차혁규 ,  김홍득

IPC: H04N5/208 ,  H04N5/21 ,  H04N5/14

CPC classification number: H04N5/208 ,  H03F2200/331 ,  H04B15/06

Abstract: A broadband receiver is provided to convert a high frequency receiving signal to receive in a mixer into a baseband signal of a high DC(Direct Current) level and suppress the signal of harmonic components to convert into the signal of a low DC level, thereby extracting a baseband signal smoothly clearly. A high frequency front end unit(110) receives a broadband signal. A local oscillator generates a local oscillation signal. An oversampling delta sigma modulator(140) performs the oversampling and delta sigma modulation of the local oscillation signal, and converts the local oscillation signal into a digital signal. A mixer(120,122) mixes the output signal of the high frequency front end unit and the output signal of the oversampling delta sigma modulator to convert a high frequency receiving signal to receive into a baseband signal. A baseband signal processor(160,162) processes the baseband signal converted by the mixer.

Abstract translation: 提供宽带接收机以将高频接收信号转换成混频器中的高直流（直流）电平的基带信号，并抑制谐波分量的信号转换为低直流电平的信号，从而提取 基带信号顺利清晰。 高频前端单元（110）接收宽带信号。 本地振荡器产生本地振荡信号。 过采样ΔΣ调制器（140）执行本地振荡信号的过采样和ΔΣ调制，并将本地振荡信号转换成数字信号。 混频器（120,122）混合高频前端单元的输出信号和过采样ΔΣ调制器的输出信号，以将高频接收信号转换为基带信号。 基带信号处理器（160,162）处理由混频器转换的基带信号。

公开(公告)号：KR100831750B1

公开(公告)日：2008-05-23

申请号：KR1020050118296

申请日：2005-12-06

Applicant: 한국과학기술원

Inventor： 남일구 ,  차혁규 ,  서보익 ,  김진봉 ,  이귀로

IPC: G11C17/10

Abstract: 본 발명은 씨모스 롬을 이용한 회로장치에 관한 것으로, 특히 일반 롬 대신에 씨모스 롬을 이용하여 한 번의 표준 씨모스 공정만으로 원칩화가 가능한 씨모스 롬을 이용한 회로 장치에 관한 것이다. 그 장치는 표준 CMOS(Complementary Metal Oxide Semiconductor) 공정으로 구현된 ROM(Read Only Memory)을 이용하여, 상기 ROM이 포함된 회로장치의 다른 소자들과 함께 표준 CMOS공정으로 동시 집적이 가능한 것을 특징으로 한다. 본 발명에 의하면, 종래의 일반 롬 대신에 본 출원인에 의해 개발된 씨모스 롬을 이용함으로써, 표준 씨모스 공정만을 이용하여 원칩화가 가능함으로 집적도가 높아지며 비용을 크게 절감시킬 수 있다.
CMOS ROM, 명령어 디코딩 룩업 테이블, 제어 정보 룩업 테이블, 모듈레이터

公开(公告)号：KR1020080048592A

公开(公告)日：2008-06-03

申请号：KR1020060118745

申请日：2006-11-29

Applicant: 엘지전자 주식회사 ,  한국과학기술원

Inventor： 차혁규 ,  이귀로 ,  김홍득

IPC: H03F1/32 ,  H03F3/343

CPC classification number: H03G1/0029 ,  H03F1/0211 ,  H03F1/223 ,  H03F1/3205 ,  H03G1/0023

Abstract: A radio frequency programmable gain amplifier using current amplification is provided to convert an input signal to current and to amplify the converted current by using a common gate amplifier having high linearity. A radio frequency programmable gain amplifier includes a current converter unit(100), a current path unit(110), a current amplifier unit(120), a current amplification ratio control unit(130), and a load(140). The current converter unit converts an input signal to current. The current path unit forms a path for applying the current to the current converter unit. The current amplifier unit amplifies the output current of the current converter unit. The current amplification ratio control unit controls an amplification gain of the current amplifier unit according to an automatic gain control signal. The load supplies the current from a power terminal to the current amplifier unit in order to output an output signal.

Abstract translation: 提供使用电流放大的射频可编程增益放大器，以将输入信号转换为电流，并通过使用具有高线性度的公共栅极放大器来放大转换的电流。 射频可编程增益放大器包括电流转换器单元（100），电流通路单元（110），电流放大器单元（120），电流放大率控制单元（130）和负载（140）。 电流转换器单元将输入信号转换为电流。 电流路径单元形成用于将电流施加到电流转换器单元的路径。 电流放大器单元放大电流转换器单元的输出电流。 电流放大率控制单元根据自动增益控制信号来控制电流放大器单元的放大增益。 负载将电流从电源端子提供给电流放大器单元，以输出输出信号。

公开(公告)号：KR1020070059451A

公开(公告)日：2007-06-12

申请号：KR1020050118296

申请日：2005-12-06

Applicant: 한국과학기술원

Inventor： 남일구 ,  차혁규 ,  서보익 ,  김진봉 ,  이귀로

IPC: G11C17/10

CPC classification number: G11C17/12 ,  G11C5/14 ,  G11C7/1078 ,  G11C17/18

Abstract: A circuit apparatus is provided to implement a SOC(System On Chip) through only standard CMOS process by using a CMOS ROM instead of a conventional ROM. A circuit apparatus using a CMOS ROM can be integrated with other devices of the circuit apparatus including a ROM(Read Only Memory) implemented by a standard CMOS(Complementary Metal Oxide Semiconductor) process, through the standard CMOS process. In the ROM, first to third input stages are comprised and data is stored by a voltage applied to the input stages. A cell access transistor includes a gate and a drain forming the second input stage and a source forming the third input stage, and is enabled by a voltage applied between the gate and the source. A high voltage blocking transistor includes a gate, a drain and a source connected to the drain of the cell access transistor, and conducts a current to the source from the drain by a bias voltage applied to the gate, and prevents a high voltage applied to the third input stage from being directly applied to the cell access transistor. An anti-fuse transistor includes a gate forming the third input stage and a source and a drain connected to the drain of the high voltage blocking transistor, and a high voltage is applied to the third input stage, and a gate oxide is broken down when the cell access transistor is enabled.

Abstract translation: 提供了一种电路装置，通过使用CMOS ROM代替常规ROM，仅通过标准CMOS工艺来实现SOC（片上系统）。 使用CMOS ROM的电路装置可以与包括通过标准CMOS工艺的标准CMOS（互补金属氧化物半导体）工艺实现的ROM（只读存储器）的电路装置的其它器件集成。 在ROM中，包括第一至第三输入级，并且通过施加到输入级的电压来存储数据。 电池存取晶体管包括形成第二输入级的栅极和漏极和形成第三输入级的源，并且通过施加在栅极和源极之间的电压使能。 高电压阻断晶体管包括栅极，漏极和连接到电池存取晶体管的漏极的源极，并且通过施加到栅极的偏置电压从漏极导通电流，并且防止施加到栅极 第三输入级被直接应用于单元存取晶体管。 反熔丝晶体管包括形成第三输入级的栅极和连接到高压阻断晶体管的漏极的源极和漏极，并且高电压被施加到第三输入级，并且栅极氧化物被分解为当 单元存取晶体管被使能。