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公开(公告)号：WO2014081064A1
公开(公告)日：2014-05-30
申请号：PCT/KR2012/010500
申请日：2012-12-06
Applicant: 한국과학기술원
CPC classification number: H01L24/81 , C08K5/09 , C08K5/42 , C09J7/20 , C09J2201/36 , C09J2203/326 , C09J2205/102 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/13101 , H01L2224/13147 , H01L2224/16145 , H01L2224/27003 , H01L2224/29082 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/81011 , H01L2224/83101 , H01L2224/83191 , H01L2924/07802 , H01L2924/00 , H01L2924/014 , H01L2924/00014
Abstract: 본 발명은, 금속 솔더와 카파필러(Cu pillar)가 구비된 3차원 TSV(Through Silicon Via) 반도체 적층용 또는 플립칩 기판 접속용 비전도성 폴리머 접착제에 있어서, 베이스 필름 상단에 적층 형성되며, 전자패키징 접합 시 상기 금속 솔더 산화물을 제거하는 플럭스 기능 물질을 발생시키거나, 플럭스 기능 물질을 포함하는 제1 접착제층, 및 상기 제1 접착제층의 상단에 적층 형성되고, 상기 플럭스 기능 물질을 포함하지 않으며, 상기 제1 접착제층 보다 먼저 경화되는 것이 특징인 제2 접착제층을 포함하는 이중층 비전도성 폴리머 접착필름 및 전자패키지 구조에 관한 것이다.
Abstract translation: 本发明涉及用于层压具有金属焊料和铜（Cu）柱或连接倒装芯片基板的3D TSV（Through Silicon Via）半导体的非导电聚合物粘合剂。 本发明涉及双层非导电聚合物粘合膜和电子封装结构，所述双层非导电聚合物粘合膜包括：第一粘合剂层，其被层压在基膜的顶部并产生焊剂 功能材料去除金属焊剂氧化物或包括助焊剂功能材料，在电子封装粘合期间; 并且层压在第一粘合剂层的顶部的第二粘合剂层不包括助焊剂功能材料，并且比第一粘合剂层更硬化。
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公开(公告)号：KR101745728B1
公开(公告)日：2017-06-09
申请号：KR1020110053715
申请日：2011-06-03
Applicant: 한국과학기술원
CPC classification number: H01L2224/16145 , H01L2224/32145 , H01L2224/73104
Abstract: 본발명은, TSV(Through Silicon Via)를이용한칩 적층방법에있어서, TSV 및범프가형성된제1 웨이퍼의상단에에폭시수지의폴리머접합물질을도포시키는단계, 상기제1 웨이퍼를칩 단위로절단하는단계, 및상기칩을전극이구비된제2 웨이퍼상단에일방향으로반복적층하는단계를, 포함하는, 반도체칩의삼차원적층방법을제공한다.
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4.发明公开아연 입자를 함유하는 비전도성 폴리머 막, 비전도성 폴리머 페이스트, 이들을 포함하는 반도체 패키지, 및 반도체 패키지의 제조 방법 审中-实审包含锌颗粒的非导电膜，包含锌颗粒的非导电糊剂，包含锌颗粒的半导体封装及其制造方法
公开(公告)号：KR1020150042090A
公开(公告)日：2015-04-20
申请号：KR1020130120864
申请日：2013-10-10
IPC: H01L23/485
CPC classification number: C08K3/08 , C08K2003/0893 , C08K2201/011 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/91 , H01L25/0657 , H01L2224/0401 , H01L2224/0557 , H01L2224/05647 , H01L2224/05655 , H01L2224/1134 , H01L2224/13111 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/17181 , H01L2224/2732 , H01L2224/27436 , H01L2224/2929 , H01L2224/29318 , H01L2224/32505 , H01L2224/33181 , H01L2224/48091 , H01L2224/48227 , H01L2224/73104 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2924/15311 , H01L2924/3651 , H01L2924/00014 , H01L2924/0665 , H01L2924/00012 , H01L2224/27 , H01L2224/11 , H01L2224/81 , H01L2224/83 , H01L2924/01047 , H01L2924/01029 , H01L2224/8211
Abstract: 본발명은비전도성폴리머막, 비전도성폴리머페이스트및 이들을포함하는반도체패키지에관한것이다. 본발명은막 형태의비전도성폴리머기재내에평균입경이약 1 nm 내지약 200 nm인아연(Zn) 입자를함유하는비전도성폴리머막 및이를포함하는반도체패키지를제공한다. 본발명의비전도성폴리머막 및비전도성폴리머페이스트를이용하면전기적접속특성이우수하고신뢰성이높은반도체패키지를간단한공정을통하여저렴하게제조할수 있는효과가있다.
Abstract translation: 本发明涉及非导电聚合物膜，非导电聚合物膏和包含该非导电聚合物的半导体封装。 本发明提供了一种非导电聚合物膜，其包含平均粒径为约1nm至200nm的Zn颗粒，在非导电聚合物基材中为薄膜型，其半导体封装包括该非导电聚合物膜。 如果使用根据本发明的非导电聚合物膜和非导电聚合物膏，则通过简单的工艺以低成本制造具有高电连接性和高可靠性的半导体封装。
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Patent Agency Ranking
公开(公告)号：KR101376190B1
公开(公告)日：2014-03-19
申请号：KR1020120056496
申请日：2012-05-29
CPC classification number: H01L2224/13 , H01L2224/73204
Abstract: 본 발명은, 플립칩(flip chip) 방식의 전자 패키징을 위한 접착제에 관한 것으로서, 열경화성 수지, 열가소성 수지, 잠재성경화제, 및 산발생제(TAG)를 포함하며, 전자 패키징 시 전자소자의 전극 상단에 형성된 금속솔더의 산화층을 제거시키는 전자 패키징용 비전도 폴리머 접합물질에 관한 것이다.
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公开(公告)号：KR1020130133342A
公开(公告)日：2013-12-09
申请号：KR1020120056496
申请日：2012-05-29
CPC classification number: H01L2224/13 , H01L2224/73204 , C09J11/00 , C09J7/22 , C09J2203/326 , C09J2205/106 , H01L21/6836 , H01L23/564 , H01L24/07
Abstract: The present invention relates to an adhesive for electronic packaging using a flip chip mode. The adhesive includes a thermosetting resin, a thermoplastic resin, a latent curing agent, and a photoacid generating agent (TAG). The present invention relates to a non non-conductive polymer joint material for electronic packaging which removes the oxide layer of a metallic solder formed on the upper end of the electrode of an electric device during electronic packaging the photoacid generator (TAG) is included is the polymer adhesion material.
Abstract translation: 本发明涉及使用倒装芯片模式的电子封装用粘合剂。 粘合剂包括热固性树脂，热塑性树脂，潜伏性固化剂和光致酸产生剂（TAG）。 本发明涉及一种用于电子封装的非导电聚合物接头材料，其在电子封装期间除去形成在电子器件的电极的上端的金属焊料的氧化物层，其中包括光酸产生剂（TAG） 聚合物粘合材料。
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公开(公告)号：KR101399957B1
公开(公告)日：2014-05-28
申请号：KR1020120133850
申请日：2012-11-23
Applicant: 한국과학기술원
CPC classification number: H01L24/81 , C08K5/09 , C08K5/42 , C09J7/20 , C09J2201/36 , C09J2203/326 , C09J2205/102 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/13101 , H01L2224/13147 , H01L2224/16145 , H01L2224/27003 , H01L2224/29082 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/81011 , H01L2224/83101 , H01L2224/83191 , H01L2924/07802 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , C09J7/35 , C09J7/22 , C09J7/30 , C09J11/00 , C09J2201/40
Abstract: The present invention relates to a bilayered non-conductive polymer adhesive film for laminating three-dimensional through silicon via (TSV) semiconductors having a metallic solder and a copper pillar (Cu pillar) or for connecting flip-chip boards, which comprises a first adhesive layer deposited in the upper end of a base film and generating a flux functional material removing the oxide of the metallic solder in the electronic packaging junction, or comprising the flux functional material; and an electronic package which is first adhesive layer and the; the upper end does not include the flux functional material; and a second adhesive layer deposited in the upper end of the first adhesive layer, not comprising the flux functional material, and being firstly hardened than the first adhesive layer, and an electronic package.
Abstract translation: 本发明涉及一种用于层压具有金属焊料和铜柱（Cu柱）的三维硅通孔（TSV）半导体或用于连接倒装芯片板的双层非导电聚合物粘合膜，其包括第一粘合剂 层，沉积在基膜的上端，并产生去除电子封装结中的金属焊料的氧化物的助焊剂功能材料，或包含助焊剂功能材料; 和第一粘合剂层的电子封装， 上端不包括助焊剂功能材料; 以及沉积在第一粘合剂层的上端中的第二粘合剂层，不包括助焊剂功能材料，并且首先比第一粘合剂层硬化，以及电子封装。
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公开(公告)号：KR1020130042240A
公开(公告)日：2013-04-26
申请号：KR1020110106422
申请日：2011-10-18
Applicant: 한국과학기술원
IPC: C09J163/00 , C09J9/02 , C09J7/02 , C08J7/04
CPC classification number: C09J163/00 , C08J7/042 , C09J7/22 , C09J7/30 , C09J7/35 , C09J9/02 , C09J2201/61 , C09J2201/622 , C09J2203/326 , C09J2205/10
Abstract: PURPOSE: An adhesive film composition is provided to effectively prevent the residual solvent evaporation during a soldering process by not containing solvent. CONSTITUTION: An adhesive film composition comprises a powder type crystalline resin with a melting point of 50-150 >= and liquid crystal resin with a viscosity of 1000 pa.s or more at room temperature. The crystalline resin is a crystalline epoxy resin and has a powder size of 10 micron or less. A manufacturing method of an adhesive film comprises a step of mixing the liquid crystal resin and crystalline resin; and a step of coating the mixed resin on a release sheet. [Reference numerals] (AA) Mixing liquid resin and powderized crystalline resin; (BB) Applying and coating on a releasing sheet; (CC) Temperature condition of 50-100°C;
Abstract translation: 目的：提供粘合膜组合物，以有效地防止在焊接过程中残留的溶剂蒸发不含溶剂。 构成：粘合膜组合物包含熔点为50-150℃的粉末型结晶树脂和室温下粘度为1000pa.s以上的液晶树脂。 结晶性树脂为结晶性环氧树脂，粉末粒径为10微米以下。 粘合膜的制造方法包括将液晶树脂和结晶性树脂混合的工序; 以及将所述混合树脂涂布在剥离片上的步骤。 （标号）（AA）混合液体树脂和粉末状结晶树脂; （BB）在剥离片上涂布和涂布; （CC）温度条件为50-100℃;
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公开(公告)号：KR1020120134645A
公开(公告)日：2012-12-12
申请号：KR1020110053715
申请日：2011-06-03
Applicant: 한국과학기술원
CPC classification number: H01L2224/16145 , H01L2224/32145 , H01L2224/73104 , H01L23/12 , H01L23/4012 , H01L23/48
Abstract: PURPOSE: A 3D laminating method of a semiconductor chip is provided to improve a junction state by laminating the semiconductor chip with a TSV(Through Silicon Via) using a polymer junction material. CONSTITUTION: A TSV(111), a bump(112), and solder are formed on a first wafer(110). A polymer junction material of epoxy resin is spread on the upper end of the first wafer. The first wafer is cut by a chip(100). An electrode with the chip is repeatedly laminated on the upper end of the second wafer in one direction. The polymer junction material includes thermosetting resin, thermoplastic resin, and a hardening agent.
Abstract translation: 目的：提供半导体芯片的3D层压方法，以通过使用聚合物连接材料层叠半导体芯片与TSV（通过硅通孔）来改善接合状态。 构成：在第一晶片（110）上形成TSV（111），凸块（112）和焊料。 环氧树脂的聚合物接合材料分散在第一晶片的上端。 第一晶片被芯片（100）切割。 具有芯片的电极在一个方向上重复层压在第二晶片的上端。 聚合物接合材料包括热固性树脂，热塑性树脂和硬化剂。
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