公开(公告)号：KR101119595B1

公开(公告)日：2012-03-06

申请号：KR1020110081459

申请日：2011-08-17

Applicant: 한국기계연구원

Inventor： 현승민 ,  이학주 ,  우창수 ,  송준엽 ,  정준호 ,  전성재 ,  이후정

IPC: H01L35/34 ,  H01L35/02

CPC classification number: H01L35/34 ,  H01L35/14 ,  H01L35/32

Abstract: PURPOSE: A method for manufacturing planar thin film thermoelectric module and a planar thin film thermoelectric module manufactured by the same are provided to minimize the size of a thermoelectric module by depositing a thin film thermoelectric semiconductor on the top and bottom of a silicon substrate. CONSTITUTION: A first thin film layer(120) and a second thin film layer(130) are formed on the top side and bottom side of a silicon substrate(110). A second thin film layer formed on the lower-part of the silicon substrate is patterned and a plurality of first groove portions are formed. A silicon substrate exposed by the first groove portion is etched and a hole portion is formed. A plurality of P-type semiconductors(140) and N-type semiconductors(150) are deposited in the top side of the first thin film layer by turns. An electrode(160) is deposited on both ends in the longitudinal direction of the P-type semiconductor and N-type semiconductor.

Abstract translation: 目的：提供一种用于制造平面薄膜热电模块的方法和由其制造的平面薄膜热电模块，以通过在硅衬底的顶部和底部沉积薄膜热电半导体来最小化热电模块的尺寸。 构成：在硅衬底（110）的顶侧和底侧上形成第一薄膜层（120）和第二薄膜层（130）。 形成在硅基板的下部的第二薄膜层被图案化并且形成多个第一凹槽部分。 蚀刻由第一槽部露出的硅基板，形成孔部。 多个P型半导体（140）和N型半导体（150）轮流沉积在第一薄膜层的顶侧。 在P型半导体和N型半导体的长度方向的两端形成有电极（160）。

公开(公告)号：KR101340853B1

公开(公告)日：2013-12-13

申请号：KR1020120115764

申请日：2012-10-18

Applicant: 한국기계연구원

Inventor： 김상민 ,  전성재 ,  김재현 ,  이학주 ,  현승민 ,  이후정 ,  정준호

IPC: H01L35/12 ,  H01L35/34

CPC classification number: H01L35/22 ,  H01L35/34

Abstract: The prevent invention relates to a method for manufacturing a thermoelectric thin film using carbon material and a thermoelectric thin film manufactured by the same. More particularly, the prevent invention relates to a method for manufacturing a thermoelectric thin film using carbon material using a carbon capable of reducing the manufacturing time and improving the performance of the thermoelectric thin film and a thermoelectric thin film manufactured by the same. A graphene layer and a metal member are separated from each other by etching and thermal peeling tape. A thermoelectric material layer is formed on the graphene to be transferred. A thermoelectric thin film is formed by alternately laminating a carbon layer and the thermoelectric material layer on a substrate. [Reference numerals] (300) Thermal peeling tape (TRT);(500) Substrate

Abstract translation: 本发明涉及使用碳材料制造的热电薄膜及其制造的热电薄膜的制造方法。 更具体地，本发明涉及一种使用碳材料制造热电薄膜的方法，所述碳材料使用能够缩短制造时间并提高热电薄膜的性能的碳和由其制造的热电薄膜。 石墨烯层和金属构件通过蚀刻和热剥离带彼此分离。 在要转移的石墨烯上形成热电材料层。 通过在基板上交替层叠碳层和热电材料层来形成热电薄膜。 （300）热剥离带（TRT）;（500）基板

公开(公告)号：KR101332284B1

公开(公告)日：2013-11-22

申请号：KR1020130025970

申请日：2013-03-12

Applicant: 한국기계연구원

Inventor： 전성재 ,  현승민 ,  이후정 ,  이학주 ,  송준엽 ,  우창수 ,  정준호 ,  김상민

IPC: H01L35/02 ,  H01L35/34

CPC classification number: H01L35/34 ,  H01L35/02 ,  H01L35/32

Abstract: The present invention relates to a planar thermoelectric device and a manufacturing method thereof and, more specifically, to a method for manufacturing a planar thermoelectric device comprising: a first electrode process (S200) of depositing a plurality of first electrodes which are separated along the circumference direction and are internally separated from each other along the radial direction, on the upper plane of a substrate; a thermoelectric semiconductor process (S400) of depositing a plurality of thermoelectric semiconductors which are extended to the outside toward radial direction of the upper plane of the deposited first electrode and the first electrode and are internally separated from each other along the radial direction, by the first electrode process; and a second electrode process (S600) of depositing a plurality of second electrodes in order to connect one side of one deposited thermoelectric semiconductor, by the thermoelectric semiconductor process on the outer side of the first electrode, one side where the first electrode is extended to the outer side and deposited, by the first electrode process, or one side of the other thermoelectric semiconductor deposited in the outer side of the first electrode, by the thermoelectric semiconductor process. [Reference numerals] (AA) Start;(BB) End;(S200) Depositing first electrodes;(S400) Depositing thermoelectric semiconductors;(S600) Depositing second electrodes

Abstract translation: 平板型热电元件及其制造方法技术领域本发明涉及一种平面型热电元件及其制造方法，更具体地，涉及一种平面型热电元件的制造方法，其特征在于，包括：第一电极工艺（S200），其沉积多个第一电极， 在基板的上平面上沿着径向在内部彼此分离; 沉积多个热电半导体的热电半导体工艺（S400），所述多个热电半导体沿着所述沉积的第一电极和所述第一电极的上平面的径向延伸到外部，并沿着径向方向彼此内部分离， 第一电极工艺; 以及第二电极工艺（S600），通过在第一电极的外侧上的热电半导体工艺，第一电极延伸到第一电极的一侧延伸到第一电极的一侧，沉积多个第二电极以便连接一个沉积的热电半导体的一侧 通过第一电极工艺沉积在另一个热电半导体的另一侧，并通过热电半导体工艺沉积在第一电极的外侧。 （AA）开始;（BB）结束;（S200）沉积第一电极;（S400）沉积热电半导体;（S600）沉积第二电极

公开(公告)号：KR1020140115159A

公开(公告)日：2014-09-30

申请号：KR1020130029906

申请日：2013-03-20

Applicant: 한국기계연구원

Inventor： 오민섭 ,  현승민 ,  이후정 ,  정준호 ,  우창수

IPC: H01M4/134 ,  H01M4/1395

CPC classification number: H01M4/134 ,  C23C14/021 ,  C23C14/025 ,  C23C14/16 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/24 ,  C25D9/04 ,  H01M4/0421 ,  H01M4/045 ,  H01M4/1395 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  Y02E60/122 ,  Y02P70/54

Abstract: The present invention relates to an anode for secondary battery wherein a Si layer is formed on the surface after pre-process of the surface of a substrate which is composed of an anode current collector, or an adhesive layer is formed which is composed of at least one among TI, Ta and alloy of TI and Si, and connection force of a contacted face is improved by forming the Si layer on the surface, improving the secondary battery performance; and to a method thereof.

Abstract translation: 本发明涉及一种二次电池用阳极，其特征在于，在由阳极集电体构成的基板的表面进行预处理之后，在表面上形成Si层，或者形成至少包含粘合层的粘合层 TI和Ta中的一种，TI和Si的合金，并且通过在表面上形成Si层来改善接触面的连接力，提高二次电池的性能; 以及其方法。

公开(公告)号：KR101738660B1

公开(公告)日：2017-05-23

申请号：KR1020150164289

申请日：2015-11-23

Applicant: 한국기계연구원

Inventor： 현승민 ,  오민섭 ,  정준호 ,  우창수 ,  이후정

IPC: H01M4/38 ,  H01M4/134 ,  H01M10/052

Abstract: 개시된실리콘기반의음극활물질은, 비정질상을가지며, 실리콘, 티타늄및 철의합금을포함한다. 실리콘의원소비율은 80 at% 내지 84 at%이다. 상기실리콘기반의음극활물질은, 티타늄및 철의농도불균일에의한물결형상의패턴을갖는다.

Abstract translation: 所公开的硅基负极活性材料具有非晶相并且包括硅，钛和铁的合金。 硅元件消耗率为80％至84％。 由于钛和铁的浓度不均匀，硅基负极活性材料具有波形图案。

公开(公告)号：KR101207300B1

公开(公告)日：2012-12-03

申请号：KR1020120082287

申请日：2012-07-27

Applicant: 한국기계연구원

Inventor： 현승민 ,  송준엽 ,  우창수 ,  정준호 ,  이학주 ,  전성재 ,  이후정

IPC: H01L35/34 ,  H01L35/14

CPC classification number: H01L35/34 ,  H01L35/16 ,  H01L35/18

Abstract: PURPOSE: A method for manufacturing a thermoelement is provided to automatize a soldering process of a thermoelectric material and an electrode by thermally compressing an N-type or P-type thermoelectric material layer after alternatively deposing the thermoelectric material layers. CONSTITUTION: A Bi layer and a Te layer are alternatively deposited on an N-type thermoelectric material(N). Electrodes(9a,9b) of a substrate are arranged on the thermoelectric material on which the Bi layer and the Te layer are deposited. The electrode of the substrate and the thermoelectric material are thermally compressed. The Bi layer and the Te layer are transformed into a Bi-Te compound. At the same time, the electrode of the substrate and the thermoelectric material are soldered.

Abstract translation: 目的：提供一种用于制造热电偶的方法，用于通过热交换热电材料层之后热压N型或P型热电材料层来自动化热电材料和电极的焊接工艺。 构成：将Bi层和Te层交替沉积在N型热电材料（N）上。 将基板的电极（9a，9b）布置在其上沉积有Bi层和Te层的热电材料上。 基板的电极和热电材料被热压缩。 Bi层和Te层转变成Bi-Te化合物。 同时，焊接基板的电极和热电材料。