Abstract:
본 발명은 희토류계 금속 모재를 제공하는 단계; 상기 희토류계 금속 모재를 플라즈마 발생수단의 내부로 장입하는 단계; 상기 희토류계 금속 모재를 플라즈마 아크로 증발시키는 단계; 상기 증발된 희토류계 증기와 반응가스가 반응하여, 희토류계 질화물의 핵이 생성 및 성장하는 단계; 및 상기 희토류계 질화물 핵의 결정성장을 억제시켜, 희토류계 질화물의 나노분말을 형성하는 단계를 포함하는 희토류계 질화물의 제조방법에 관한 것으로, 희토류계 금속 모재를 플라즈마 아크로 증발시키는 아크 플라즈마 방전법에 의해 용이하게 희토류계 질화물을 제조할 수 있다.
Abstract:
본 발명의 일 실시예에 따르면, 붕소 분말 및 액상의 염화 탄화수소 화합물을 포함하는 제1 혼합물을 준비하는, 제1 혼합물 준비단계; 상기 제1 혼합물 및 마그네슘 분말을 포함하는 제2 혼합물을 준비하는, 제2 혼합물 준비단계; 상기 제2 혼합물을 가압하여 성형체를 제조하는 성형체 제조단계; 및 상기 성형체를 소결하여 이붕소 마그네슘을 포함하는 초전도체를 제조하는, 소결단계;를 포함하는 이붕소 마그네슘을 포함하는 초전도체의 제조방법이 제공된다.
Abstract:
본 발명은 이붕소마그네슘 초전도 선재의 제조방법 및 이에 의하여 제조되는 이붕소마그네슘 초전도 선재에 관한 것으로 구체적으로는 이붕소마그네슘 원료 분말을 분말압연법으로 압연하는 것을 특징으로 하는 이붕소마그네슘 초전도 선재의 제조방법을 제공함으로써, 금속피복재 내부에 충진되는 초전도 분말의 밀도 및 연결성 향상을 시킬 수 있으며, 이를 통하여 초전도 전류가 흐를 수 있는 실질적인 유효 면적을 크게 하는 효과가 있다. 또한 본 발명의 제조방법은 분말압연공정을 통해 최종 선재의 크기에 가깝게 공정을 시작하여 생산비용과 생산속도 면에서도 유리한 효과가 있으며, 나아가 자기장 하 이붕소마그네슘 초전도 선재의 자속고정 특성 향상을 위해 자속고정점 역할을 하는 다양한 도핑 물질을 첨가하는 공정에서도 본 발명을 적용할 수 있는 장점이 있다.
Abstract:
The present invention relates to a metal pattern forming apparatus and a metal pattern forming method using the same, including; a laser generating part; a projection part to focus a laser beam provided from the laser generating part and to reduce the size of the laser beam; and an electrolytic bath to which the laser beam is irradiated through the projection part. Since a photolithography process can be excluded, not only the process is simple, but problems of environmental pollution also can be solved, and metal patterns with an excellent pattern shape, precision, and productivity can be formed.
Abstract:
PURPOSE: A method for manufacturing a nano porous metal body is provided to obtain a porous, rigid nano metal body because nano metal materials are formed through oxidation and reduction processes. CONSTITUTION: A method for manufacturing a nano porous metal body comprises the steps of: forming nano metal powder(S100), supplying oxygen to the nano metal powder to produce hollow nano oxide(S110), and supplying hydrogen to the nano oxide to reduce the nano oxide into a metal state(S130). [Reference numerals] (S100) Nano metal powder production step; (S110) Nano oxidation step; (S120) Nano oxide assembly forming; (S130) Nano reduction step
Abstract:
PURPOSE: A manufacturing method of a quantum dot composite is provided to manufacture quantum dot composite through physical self-assembly process without the performance degradation of the quantum dot. CONSTITUTION: A manufacturing method of a quantum dot composite comprises: a step of preparing quantum dot; a step of forming a first polar solvent comprising the quantum dot by dispersing the quantum dots into polar solvent; a step of forming a third polar solvent by mixing the first polar solvent and second polar solvent comprising inorganic nano particles; a step of forming micro droplets comprising the quantum dots and the inorganic nano particles by emulsifying the third polar solvent to hydrophobic oil; and a step of forming composite micro powder comprising the quantum dots and the inorganic nano particles by removing the polar solvent in the droplet.
Abstract:
PURPOSE: A hole transport layer for a solar cell is provided to simplify a multilayered structure of the solar cell, to ensure stability to oxygen or moisture in the air, and to control properties required for a light-emitting layer or a light absorption layer. CONSTITUTION: A method for manufacturing a hole transport layer for a solar cell comprises the steps of: (S100) preparing a conductive thin film layer having flexibility by including nickel or alloy including the nickel; and (S200) heating the conductive thin film layer at 50 - 1400°C in an oxygen atmosphere and forming an oxide layer consisting of nickel oxide to form a hole-transport layer.
Abstract:
PURPOSE: A method for manufacturing hole transport layer for light emitting devices and solar cell is provided to obtain a stable hole-transport layer to oxygen or moisture in the air and to control the oxygen content and heat treatment temperature of reaction gas. CONSTITUTION: A hole transport layer for light emitting devices and solar cell includes nickel oxide formed by oxidizing one side of a conductive thin film layer made of flexible metals. A method for manufacturing hole transport layer for light emitting devices and solar cell comprises a material preparation step for preparing a conductive thin film layer(10) made of flexible metals, and an oxide layer formation step for forming a hole-transport layer(20) by forming an oxidized layer by heat-treating the conductive thin film layer in an oxygen atmosphere.
Abstract:
A self-aligned multi-turn type apparatus for manufacturing a thin film tape is provided to manufacture a thin film tape having superior quality by uniformly depositing a thin film layer lengthwise and widthwise along the thin film tape. A self-aligned multi-turn type apparatus for manufacturing a thin film tape comprises a pair of reels which are spaced apart from each other, a roll assembly installed between the reels, and a tape type substrate. The roll assembly includes a plurality of rollers(100) having the same size and shape. Each roller has an outer peripheral surface(101-110) which is inclined downward with an inclination angle ranging from 0° to 90°.