公开(公告)号：KR1020110015797A

公开(公告)日：2011-02-17

申请号：KR1020090073199

申请日：2009-08-10

Applicant: 한국산업기술대학교산학협력단

Inventor： 임실묵 ,  정상묵 ,  이경우

IPC: H01L21/203

CPC classification number: H01L21/2855 ,  C23C14/35 ,  H01L21/324

Abstract: PURPOSE: A lead zirconate titanate(PZT)-based thin film and a method for manufacturing the same are provided to miniaturize the size of particles by setting the deposition power of a PZT-based lower film with low level. CONSTITUTION: A substrate(21) is prepared. A lower electrode(25) is formed on the substrate. A PZT-based lower film(26) is formed on the lower electrode. The chemical formula of the PZT is PbZr_xTi_x-1O_3. The PZT-based upper film(27) is formed in the PZT-based lower film. An upper electrode(29) is formed on the PZT-based upper film. An insulating film is formed between the substrate and the lower electrode.

Abstract translation: 目的：提供一种基于钛酸铅钛酸盐（PZT）的薄膜及其制造方法，通过将低浓度PZT的下层膜的沉积功率设定为使颗粒尺寸小型化。 构成：制备基材（21）。 在基板上形成下电极（25）。 在下电极上形成有基于PZT的下膜（26）。 PZT的化学式为PbZr_xTi_x-10_3。 基于PZT的下部薄膜形成基于PZT的上部薄膜（27）。 上部电极（29）形成在基于PZT的上部膜上。 在基板和下电极之间形成绝缘膜。