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公开(公告)号：KR1020080096634A
公开(公告)日：2008-10-31
申请号：KR1020080086907
申请日：2008-09-03
Applicant: 한국전자통신연구원 , 숭실대학교산학협력단
CPC classification number: H01S5/06258 , G02B6/136 , H01S5/12
Abstract: A method for generating terahertz waves using a DFB(Distributed feedback) laser device is provided to change difference between two mode frequencies emitted from a multiregional DFB laser device from a low frequency to a THz region by changing period difference of a diffraction grating. A first diffraction grating is formed in a first DFB region including a lower waveguide(102) on a substrate(101), an active layer(110) formed on the lower waveguide, and a waveguide on the active layer. A second diffraction grating is formed in a second DFB region which is separated from the first DFB region and includes the lower waveguide, the active layer, and the upper waveguide on the substrate. A phase tuning section is formed between the first DFB region with the first diffraction grating and the second DFB region with the second diffraction grating. A first oscillating wave and a second oscillating wave are generated in the first and second DFB regions by supplying a first current to the first DFB region with the first diffraction grating and a second current to the second DFB region with the second diffraction grating. The phases of the fist and second oscillating waves are controlled by supplying a phase control current to the phase tuning section. The first and second oscillating waves with controlled phases are photo-mixed.
Abstract translation: 提供了一种使用DFB（分布式反馈）激光装置产生太赫兹波的方法，通过改变衍射光栅的周期差来改变从多波段DFB激光装置发射的两个模式频率从低频到太赫兹区域的差异。 第一衍射光栅形成在包括在基底（101）上的下波导（102），形成在下波导上的有源层（110）和有源层上的波导的第一DFB区域中。 第二衍射光栅形成在与第一DFB区分离并且在衬底上包括下波导，有源层和上波导的第二DFB区中。 在具有第一衍射光栅的第一DFB区域和具有第二衍射光栅的第二DFB区域之间形成相位调谐部分。 通过用第一衍射光栅向第一DFB区域提供第一电流，并且通过用第二衍射光栅向第二DFB区域提供第二电流，在第一和第二DFB区域中产生第一振荡波和第二振荡波。 通过向相位调谐部提供相位控制电流来控制第一和第二振荡波的相位。 具有受控相位的第一和第二振荡波是光混合的。
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公开(公告)号：KR100407818B1
公开(公告)日：2003-11-28
申请号：KR1020010057005
申请日：2001-09-15
Applicant: 한국전자통신연구원
IPC: G02B6/35
Abstract: PURPOSE: A vertical directional coupler switch and a fabrication method thereof are provided, which have an extinction ratio of cross and bar states above 30 dB. CONSTITUTION: The vertical directional coupler switch includes the first and the second waveguide(32,34) having a switching operation induced section(SOIS) arranged symmetrically with equal refractive indexes in cross state and bar state respectively, and also having an extinction ratio enhanced section(ERES) arranged asymmetrically with difference refractive indexes in the above cross state and the above bar state respectively. The vertical directional coupler switch also includes a cladding layer which is inserted between two waveguides and includes a refractive index. The refractive index of the extinction ratio enhanced section is controlled independently by a current injection or an electro-optic effect.
Abstract translation: 目的：提供垂直定向耦合器开关及其制造方法，其具有30dB以上的交叉和条状消光比。 组成：垂直定向耦合器开关包括第一和第二波导（32,34），它们分别具有交叉状态和条状态下具有等折射率对称布置的开关操作诱导部分（SOIS），并且还具有消光比增强部分 （ERES）分别在上述交叉状态和上述条状态下以不同折射率不对称排列。 垂直定向耦合器开关还包括插入两个波导之间并且包括折射率的包层。 消光比增强部分的折射率由电流注入或电光效应独立控制。
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公开(公告)号：KR100900320B1
公开(公告)日：2009-06-02
申请号：KR1020080086907
申请日：2008-09-03
Applicant: 한국전자통신연구원 , 숭실대학교산학협력단
Abstract: 본 발명은 각 영역에 회절격자를 포함하는 두 개의 DFB 영역과 위상 변조 영역으로 구성된 다중 영역 DFB 레이저 소자를 이용하는 테라헤르츠파 발생 방법에 관한 것이다.
기판 상에 하부 도파로, 상기 하부 도파로 상부에 활성층 및 상기 활성층 상부에 상부 도파로를 포함하는 제1 DFB 영역에 제1 회절 격자를 형성하는 단계, 상기 기판 상에 형성된 상기 하부 도파로, 상기 활성층 및 상기 상부 도파로를 포함하며 상기 제1 DFB영역과 이격 거리에 위치된 제2 DFB 영역에 제2 회절 격자를 형성하는 단계, 상기 제1 회절 격자가 형성된 제1 DFB영역과 상기 제2 회절 격자가 형성된 제2 DFB영역 사이에 위상 변조 영역을 형성하는 단계, 상기 제1 회절 격자가 형성된 제1 DFB 영역에 제1 전류를 공급하고, 상기 제2 회절 결자가 형성된 제2 DFB 영역에 제2 전류를 공급하여 상기 제1 DFB 영역 및 상기 제2 DFB 영역에서 제1 발진파 및 제2 발진파를 발생시키는 단계, 상기 위상 변조 영역에 위상 조정 전류를 공급하여 상기 제1 발진파 및 제2 발진파의 위상을 조정하는 단계 및 상기 위상이 조정된 제1 발진파 및 제2 발진파를 포토믹싱하는 단계를 포함하되, 상기 제1 발진파 및 제2 발진파의 브래그 파장 차이에 비례하여 상기 제1 발진파의 발진파장은 감소하고 상기 제2 발진파의 발진파장은 증가하는 것을 특징으로 하는 테라 헤르츠파를 발생하는 방법을 제공할 수 있다.
전술한 바와 같은 방법으로 생성되는 테라헤르츠파는 , 각각 회절격자의 주 기 차이를 변화시킴으로써 다중 영역 DFB 레이저에서 방출하는 두 모드의 주파수 차이를 매우 낮은 주파수에서 THz 영역까지 변화시킬 수 있다.
다중 영역 DFB LD, 테라헤르츠파 생성, 회절격자-
公开(公告)号：KR1020070088356A
公开(公告)日：2007-08-29
申请号：KR1020070017161
申请日：2007-02-20
Applicant: 한국전자통신연구원 , 숭실대학교산학협력단
IPC: H01S5/00
CPC classification number: H01S3/0675 , H01S5/0602 , H01S5/0656
Abstract: A multiple section DFB(Distributed FeedBack) laser device, a manufacturing method thereof, and a method for generating tera hertz waves are provided to vary a frequency difference of two modes discharged from a multiple section DFB laser device, from a low frequency to a tera hertz frequency by varying a periodic difference of a complex-coupled diffraction grating. A multiple section DFB laser device includes an active layer(110), a first DFB section, a second DFB section, and a phase modulation section. The active layer(110) is formed on an upper part of a substrate(101). The first DFB section is formed on one region of an upper part and a lower part of the active layer(110), and has a plurality of first diffraction gratings. The second DFB section is formed to be spaced apart from the first DFB section, and has a plurality of second diffraction gratings which are formed on one region of the lower part and the upper part of the active layer(110). The phase modulation section is formed between the first DFB section and the second DFB section. The first and second DFB sections have a waveguide(102) which is formed on the substrate(101), a first SCH(Separate Confinement Hetero) layer(109a) which is formed on the waveguide(102) of the lower part of the active layer(110), and a second SCH layer(109b) which is formed on the active layer(110).
Abstract translation: 提供多段DFB（分布式反馈）激光装置及其制造方法和用于产生多赫兹波的方法，以改变从多段DFB激光装置放出的两种模式的频率差，从低频到Tera 通过改变复耦合衍射光栅的周期性差异来产生赫兹频率。 多段DFB激光装置包括有源层（110），第一DFB部分，第二DFB部分和相位调制部分。 有源层（110）形成在基板（101）的上部。 第一DFB部分形成在有源层（110）的上部和下部的一个区域上，并且具有多个第一衍射光栅。 第二DFB部分形成为与第一DFB部分间隔开，并且具有形成在有源层（110）的下部和上部的一个区域上的多个第二衍射光栅。 相位调制部分形成在第一DFB部分和第二DFB部分之间。 第一DFB部分和第二DFB部分具有形成在基板（101）上的波导（102），形成在活动的下部的波导（102）上的第一SCH（分离限制异质）层（109a） 层（110）和形成在有源层（110）上的第二SCH层（109b）。
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Patent Agency Ranking
公开(公告)号：KR100395490B1
公开(公告)日：2003-08-25
申请号：KR1020010015905
申请日：2001-03-27
Applicant: 한국전자통신연구원
IPC: G02B26/00
Abstract: PURPOSE: A vertical directional coupler switch comprising two regions having a high extinction ratio and an ultra short length are provided which is appropriate for realizing a cross state and a bar state having a high extinction ratio over 30dB at an end of a device and having a very short coupling length. CONSTITUTION: According to the vertical directional coupler optical switch, the first and the second waveguide(10,20) have a coupling region divided into n regions whose refractive indexes can be controlled. A coupling intensity control layer(30) is inserted between the first and the second waveguide, and induces a switching operation of a cross state and a bar state at an end of the above coupling region by varying a coupling length of the above coupling region through a refractive index change. The refractive indexes of the first and the second waveguide and the coupling intensity control layer are controlled independently each other by a current injection or an electro-optic effect.
Abstract translation: 目的：提供一种垂直定向耦合器开关，其包括具有高消光比和超短长度的两个区域，其适于实现在装置的一端具有超过30dB的高消光比的交叉状态和条状态，并且具有 非常短的耦合长度。 组成：根据垂直定向耦合器光开关，第一和第二波导（10,20）具有一个耦合区域，该耦合区域被分成n个可以控制折射率的区域。 耦合强度控制层（30）插入在第一波导和第二波导之间，并且通过改变上述耦合区域的耦合长度来引起上述耦合区域的末端处的交叉状态和条状态的切换操作 折射率改变。 第一和第二波导以及耦合强度控制层的折射率通过电流注入或电光效应彼此独立地控制。
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公开(公告)号：KR1020030024050A
公开(公告)日：2003-03-26
申请号：KR1020010057005
申请日：2001-09-15
Applicant: 한국전자통신연구원
IPC: G02B6/35
Abstract: PURPOSE: A vertical directional coupler switch and a fabrication method thereof are provided, which have an extinction ratio of cross and bar states above 30 dB. CONSTITUTION: The vertical directional coupler switch includes the first and the second waveguide(32,34) having a switching operation induced section(SOIS) arranged symmetrically with equal refractive indexes in cross state and bar state respectively, and also having an extinction ratio enhanced section(ERES) arranged asymmetrically with difference refractive indexes in the above cross state and the above bar state respectively. The vertical directional coupler switch also includes a cladding layer which is inserted between two waveguides and includes a refractive index. The refractive index of the extinction ratio enhanced section is controlled independently by a current injection or an electro-optic effect.
Abstract translation: 目的：提供一种垂直定向耦合器开关及其制造方法，其具有超过30dB的交叉和条状消光比。 构成：垂直方向耦合器开关包括分别具有在交叉状态和条状状态下对称地具有相等折射率的开关操作感应部分（SOIS）的第一和第二波导（32,34），并且还具有消光比增强部分 （ERES）分别在上述交叉状态和上述条状状态下以不同的折射率布置。 垂直定向耦合器开关还包括插入在两个波导之间并包括折射率的包覆层。 消光比增强部分的折射率由电流注入或电光效应独立控制。
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公开(公告)号：KR101018468B1
公开(公告)日：2011-03-02
申请号：KR1020080098351
申请日：2008-10-07
Applicant: 숭실대학교산학협력단 , 한국전자통신연구원
Abstract: 본 발명의 핀 배열 패치 안테나는 패치에 전력을 공급하는 피드 핀(Feed Pin)을 수용하는 피드 핀 삽입부를 포함하고 패치와의 사이에 도전 전류를 발생시키는 도전체로 형성된 도전체 핀이 접촉되는 접지면(ground)과, 접지면 상부에 위치하며 상기 접지면과 패치면에 수직 방향으로 편파 전류(polarization current)를 흐르게 하는 유전체 기판 및 유전체 기판의 상부에 위치하고 피드 핀 및 도전체 핀이 접촉되는 패치면을 포함하는 핀 배열 패치 안테나에 관한 것이다.
안테나, 패치, 마이크로 스트립, 도전체 핀, 방사, 편파전류, 도전전류, 상호 결합.-
公开(公告)号：KR1020100039122A
公开(公告)日：2010-04-15
申请号：KR1020080098351
申请日：2008-10-07
Applicant: 숭실대학교산학협력단 , 한국전자통신연구원
CPC classification number: H01Q21/065 , H01Q1/38 , H01Q9/0407 , H01Q13/08
Abstract: PURPOSE: A pin array patch antennas and a method of designing thereof are provided to improve the orientation and radiation pattern of an antenna by designing the antenna to increase radiation to front the antenna. CONSTITUTION: Ground planes(303,503) comprise an inserting unit receiving a feed pin supplying power to a patch. The ground planes are connected to a conductive pin generating a conductive current. Dielectric substrates(301,501) are located on the ground plane, and flows a polarization current in the vertical direction to the ground and the patch plane. Patch faces(302,502) are located on the dielectric substrate.
Abstract translation: 目的：提供一种针阵列贴片天线及其设计方法，以通过设计天线来改善天线的取向和辐射图，以增加辐射到天线前方。 构成：接地平面（303,503）包括插入单元，其接收向贴片供电的馈送针。 接地平面连接到产生导电电流的导电针。 电介质基板（301,501）位于接地平面上，并将垂直方向的极化电流流向地面和贴片平面。 贴片面（302,502）位于电介质基片上。
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公开(公告)号：KR1020020091331A
公开(公告)日：2002-12-06
申请号：KR1020010015905
申请日：2001-03-27
Applicant: 한국전자통신연구원
IPC: G02B26/00
Abstract: PURPOSE: A vertical directional coupler switch comprising two regions having a high extinction ratio and an ultra short length are provided which is appropriate for realizing a cross state and a bar state having a high extinction ratio over 30dB at an end of a device and having a very short coupling length. CONSTITUTION: According to the vertical directional coupler optical switch, the first and the second waveguide(10,20) have a coupling region divided into n regions whose refractive indexes can be controlled. A coupling intensity control layer(30) is inserted between the first and the second waveguide, and induces a switching operation of a cross state and a bar state at an end of the above coupling region by varying a coupling length of the above coupling region through a refractive index change. The refractive indexes of the first and the second waveguide and the coupling intensity control layer are controlled independently each other by a current injection or an electro-optic effect.
Abstract translation: 目的：提供一种垂直定向耦合器开关，其包括具有高消光比和超短长度的两个区域，其适合于在器件的端部实现具有超过30dB的高消光比的交叉状态和棒状态，并且具有 非常短的耦合长度。 构成：根据垂直方向耦合器光开关，第一和第二波导（10,20）具有被分成折射率可被控制的n个区域的耦合区域。 耦合强度控制层（30）插入在第一和第二波导之间，并且通过改变上述耦合区域的耦合长度通过上述耦合区域的耦合长度而引起在上述耦合区域的端部处的交叉状态和条状状态的切换操作 折射率变化。 第一和第二波导和耦合强度控制层的折射率通过电流注入或电光效应彼此独立地控制。
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