인듐 틴 산화물 전자빔 레지스트의 합성 방법 및 이를이용한 인듐 틴 산화물 패턴 형성 방법
    2.
    发明授权
    인듐 틴 산화물 전자빔 레지스트의 합성 방법 및 이를이용한 인듐 틴 산화물 패턴 형성 방법 失效
    氧化锡(ITO)电子束电阻的合成方法和使用它的ITO的图案形成方法

    公开(公告)号:KR100819062B1

    公开(公告)日:2008-04-03

    申请号:KR1020070026774

    申请日:2007-03-19

    Abstract: A method for synthesizing an indium tin oxide electron beam resist and a method for forming an ITO pattern are provided to form a pattern in various forms according to resolution of an electron beam recorder, and solve problems caused during an etching process or lift-off process. A method for synthesizing an indium tin oxide(ITO) electron beam resist includes the steps of: providing indium chloride tetrahydrate and tin chloride dihydrate; and dissolving the indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol to synthesize the ITO electron beam resist. A method for forming an ITO pattern includes the steps of: (200) synthesizing the ITO electron beam resist; (220) coating a substrate with the synthesized ITO electron beam resist to form an ITO electron beam resist film; (240,260) forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film using an electron beam recorder; and (280) heat-treating the ITO electron beam resist pattern to form the ITO pattern. Further, the 2-ethoxy ethanol is used as solvent and stabilizer.

    Abstract translation: 提供了一种用于合成铟锡氧化物电子束抗蚀剂的方法和用于形成ITO图案的方法,以根据电子束记录器的分辨率形成各种形式的图案,并且解决在蚀刻处理或剥离过程中引起的问题 。 铟锡氧化物(ITO)电子束抗蚀剂的合成方法包括以下步骤:提供氯化铟四水合物和氯化锡二水合物; 并将氯化铟四水合物和氯化锡二水合物溶解在2-乙氧基乙醇中以合成ITO电子束抗蚀剂。 一种形成ITO图形的方法包括以下步骤:(200)合成ITO电子束抗蚀剂; (220)用合成的ITO电子束抗蚀剂涂覆基板以形成ITO电子束抗蚀膜; (240,260),通过使用电子束记录器对ITO电子束抗蚀剂膜进行图案化而形成ITO电子束抗蚀剂图案; 和(280)对ITO电子束抗蚀剂图案进行热处理以形成ITO图案。 此外,使用2-乙氧基乙醇作为溶剂和稳定剂。

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