公开(公告)号：KR100466543B1

公开(公告)日：2005-01-15

申请号：KR1020020074420

申请日：2002-11-27

Applicant: 한국전자통신연구원

Inventor： 배성범 ,  이규석 ,  이정희 ,  이재훈

IPC: H01L29/772

Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of embodying a SAW filter using an Sl(Semi Insulating)-GaN layer of an HEMT(High Electron Mobility Transistor) for integrating the devices on a unit wafer. CONSTITUTION: An HEMT device is manufactured by depositing an SI GaN layer(12) and an AlxGa1-xN layer(13) on a semiconductor substrate(11). The first predetermined region of the AlxGa1-xN layer is etched. An FET(Field Effect Transistor) device is manufactured by forming FET electrodes(14a,14b) on the predetermined region of the AlxGa1-xN layer. The second predetermined region of the AlxGa1-xN layer is etched for exposing the SI GaN layer. Then, a SAW filter is manufactured by forming SAW filter electrodes(15) on the exposed SI-GaN layer.

Abstract translation: 目的：提供一种用于制造半导体器件的方法，其能够体现使用HEMT（高电子迁移率晶体管）的S1（半绝缘）-GaN层的SAW滤波器，用于将器件集成在单元晶片上。 构成：通过在半导体衬底（11）上沉积SI GaN层（12）和Al x Ga 1-x N层（13）来制造HEMT器件。 AlxGa1-xN层的第一预定区域被蚀刻。 通过在AlxGa1-xN层的预定区域上形成FET电极（14a，14b）来制造FET（场效应晶体管）器件。 蚀刻Al x Ga 1-x N层的第二预定区域以暴露SI GaN层。 然后，通过在暴露的SI-GaN层上形成SAW滤波器电极（15）来制造SAW滤波器。

公开(公告)号：KR1020040046479A

公开(公告)日：2004-06-05

申请号：KR1020020074420

申请日：2002-11-27

Applicant: 한국전자통신연구원

Inventor： 배성범 ,  이규석 ,  이정희 ,  이재훈

IPC: H01L29/772

Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of embodying a SAW filter using an Sl(Semi Insulating)-GaN layer of an HEMT(High Electron Mobility Transistor) for integrating the devices on a unit wafer. CONSTITUTION: An HEMT device is manufactured by depositing an SI GaN layer(12) and an AlxGa1-xN layer(13) on a semiconductor substrate(11). The first predetermined region of the AlxGa1-xN layer is etched. An FET(Field Effect Transistor) device is manufactured by forming FET electrodes(14a,14b) on the predetermined region of the AlxGa1-xN layer. The second predetermined region of the AlxGa1-xN layer is etched for exposing the SI GaN layer. Then, a SAW filter is manufactured by forming SAW filter electrodes(15) on the exposed SI-GaN layer.

Abstract translation: 目的：提供一种用于制造半导体器件的方法，其能够使用用于将器件集成在单元晶片上的HEMT（高电子迁移率晶体管）的S1（半绝缘）-GaN层来体现SAW滤波器。 构成：通过在半导体衬底（11）上沉积SI GaN层（12）和Al x Ga 1-x N层（13）来制造HEMT器件。 蚀刻Al x Ga 1-x N层的第一预定区域。 通过在Al x Ga 1-x N层的预定区域上形成FET电极（14a，14b）来制造FET（场效应晶体管）器件。 蚀刻Al x Ga 1-x N层的第二预定区域以暴露SI GaN层。 然后，通过在暴露的SI-GaN层上形成SAW滤波器电极（15）来制造SAW滤波器。

公开(公告)号：KR100413523B1

公开(公告)日：2004-01-03

申请号：KR1020010079308

申请日：2001-12-14

Applicant: 한국전자통신연구원

Inventor： 배성범 ,  이규석 ,  이정희 ,  이재훈

IPC: H01L29/778

Abstract: PURPOSE: A method for manufacturing an HEMT(High Electron Mobility Transistor) having the increased electron density of two dimensional electron gas is provided to be capable of improving the high power and frequency characteristics of the transistor without electron scattering by forming a potential well at the bi-junction surface between a GaN layer and an AlxGa1-xN layer at the temperature of 1000°C, or higher. CONSTITUTION: A high resistive GaN layer(62) is formed on a substrate(60). An InN layer(64) is formed on the high resistive GaN layer(62) by In-delta doping using an MOCVD(Metal-Organic Chemical Vapor Deposition) method. At this time, a potential well is formed at the InN layer and an electron density increased two dimensional electron gas layer is capable of being formed at the potential well. An AlxGa1-xN layer(69) is formed on the InN layer(64). Preferably, the substrate is made of one selected from a group consisting of sapphire, SiC, GaN, Si, or GaAs. Preferably, the GaN layer(62) has a thickness of 1-10 μm. Preferably, the GaN, InN, and AlxGa1-xN layer forming processes are carried out at the temperature of 1000°C, or higher.

Abstract translation: 目的：提供一种用于制造具有增加的二维电子气的电子密度的HEMT（高电子迁移率晶体管）的方法，以便能够通过在所述电子阱中形成势阱而改善没有电子散射的晶体管的高功率和频率特性 在1000℃或更高的温度下，在GaN层和Al x Ga 1-x N层之间的双结表面。 构成：在衬底（60）上形成高电阻GaN层（62）。 通过使用MOCVD（金属有机化学气相沉积）方法的In-δ掺杂，在高电阻GaN层（62）上形成InN层（64）。 此时，在InN层上形成势阱，并且势阱中能够形成电子密度增加的二维电子气层。 在InN层（64）上形成Al x Ga 1-x N层（69）。 优选地，衬底由选自蓝宝石，SiC，GaN，Si或GaAs中的一种制成。 优选地，GaN层（62）具有1-10μm的厚度。 优选地，GaN，InN和Al x Ga 1-x N层形成工艺在1000℃或更高的温度下进行。

公开(公告)号：KR1020030049169A

公开(公告)日：2003-06-25

申请号：KR1020010079308

申请日：2001-12-14

Applicant: 한국전자통신연구원

Inventor： 배성범 ,  이규석 ,  이정희 ,  이재훈

IPC: H01L29/778

Abstract: PURPOSE: A method for manufacturing an HEMT(High Electron Mobility Transistor) having the increased electron density of two dimensional electron gas is provided to be capable of improving the high power and frequency characteristics of the transistor without electron scattering by forming a potential well at the bi-junction surface between a GaN layer and an AlxGa1-xN layer at the temperature of 1000°C, or higher. CONSTITUTION: A high resistive GaN layer(62) is formed on a substrate(60). An InN layer(64) is formed on the high resistive GaN layer(62) by In-delta doping using an MOCVD(Metal-Organic Chemical Vapor Deposition) method. At this time, a potential well is formed at the InN layer and an electron density increased two dimensional electron gas layer is capable of being formed at the potential well. An AlxGa1-xN layer(69) is formed on the InN layer(64). Preferably, the substrate is made of one selected from a group consisting of sapphire, SiC, GaN, Si, or GaAs. Preferably, the GaN layer(62) has a thickness of 1-10 μm. Preferably, the GaN, InN, and AlxGa1-xN layer forming processes are carried out at the temperature of 1000°C, or higher.

Abstract translation: 目的：提供具有增加的二维电子气体的电子密度的HEMT（高电子迁移率晶体管）的制造方法，以便能够通过在二极管形成电位阱来改善晶体管的高功率和频率特性而不发生电子散射 在1000℃或更高的温度下，GaN层和Al x Ga 1-x N层之间的双结面。 构成：在衬底（60）上形成高电阻GaN层（62）。 通过使用MOCVD（金属有机化学气相沉积）方法的In-δ掺杂，在高电阻GaN层（62）上形成InN层（64）。 此时，在InN层形成势阱，能够在势阱形成电子密度增加的二维电子气层。 在InN层（64）上形成Al x Ga 1-x N层（69）。 优选地，衬底由选自由蓝宝石，SiC，GaN，Si或GaAs组成的组中的一种制成。 优选地，GaN层（62）的厚度为1-10μm。 优选地，GaN，InN和Al x Ga 1-x N层形成工艺在1000℃或更高的温度下进行。

公开(公告)号：KR1020120001585A

公开(公告)日：2012-01-04

申请号：KR1020110007007

申请日：2011-01-24

Applicant: 한국전자통신연구원

Inventor： 안윤영 ,  이재훈 ,  안병준

IPC: H04L12/28 ,  H04W8/26 ,  H04W88/06 ,  H04L29/06

CPC classification number: H04W28/0226 ,  H04W8/26 ,  H04W80/045

Abstract: PURPOSE: A flow mobility supplying method is provided to supply flow based mobility to a mobile node including a plurality of interfaces in a PMIPv6 domain environment. CONSTITUTION: An LMA(Local Mobility Anchor)(320) transmits a PBAck message including a first MN-HNP(Mobile Node-Home Network Prefix) and a second MN-HNP to a first MAG(Mobile Access Gateway)(341). An MN(300) transmits traffic related to communication through a first interface to a second MAG(312) in a state that communication is performed through a first interface(301) after allocating second MN-HOA(MN-Home Address) to a second interface. The second MAG stores an entry including traffic information in a flow mapping table(343).

Abstract translation: 目的：提供流动性提供方法，以在PMIPv6域环境中为包括多个接口的移动节点提供基于流的移动性。 构成：LMA（本地移动锚点）（320）将包括第一MN-HNP（移动节点 - 家庭网络前缀）和第二MN-HNP的PBAck消息发送到第一MAG（移动接入网关）（341）。 MN（300）在将第二MN-HOA（MN-归属地址）分配给第二接口（301）之后，通过第一接口（301）进行通信的状态，通过第一接口将与通信有关的通信传送到第二MAG（312） 接口。 第二MAG将包括流量信息的条目存储在流映射表（343）中。