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公开(公告)号：KR1020160104171A
公开(公告)日：2016-09-05
申请号：KR1020150026648
申请日：2015-02-25
Applicant: 한국전자통신연구원
IPC: H01L33/06
CPC classification number: H01L33/06 , H01L2924/12041
Abstract: 질화물반도체발광소자는 n형질화물층, p형질화물층, 제 1 활성층및 제 2 활성층을포함한다. 제 1 활성층및 제 2 활성층은 n형질화물층과 p형질화물층사이에개재된다. 제 1 활성층은교대로적층되는복수의제 1 양자우물층들및 복수의제 1 장벽층들을포함하고, 제 2 활성층은교대로적층되는복수의제 2 양자우물층들및 복수의제 2 장벽층들을포함한다. 제 1 양자우물층들은하위층에서상위층으로갈수록두께가증가하고, 제 2 양자우물층들은하위층에서상위층으로갈수록두께가감소한다.
Abstract translation: 提供了一种氮化物半导体发光器件，其包括可以增加有源层中的电子和空穴的耦合效率的多量子阱层结构。 氮化物半导体发光器件包括：n型氮化物层; p型氮化物层; 第一活性层; 和第二活性层。 第一和第二有源层插入在n型和p型氮化物层之间。 第一有源层包括多个第一量子阱层和交替层叠在其上的多个第一势垒层。 第二有源层包括多个第二量子阱层和交替层叠在其上的多个第二势垒层。 第一量子阱层的厚度从下层向上层增加，并且第二量子阱层的厚度从下层向着上层减小。
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公开(公告)号：KR1020140041357A
公开(公告)日：2014-04-04
申请号：KR1020130113746
申请日：2013-09-25
Applicant: 한국전자통신연구원
IPC: G05F1/46
CPC classification number: H02M3/1582 , H02H7/1213 , H02M1/44
Abstract: The present invention relates to a system of supplying constant-current DC power to various serial loads which are connected in series. The present invention comprises a constant-current DC power supply part which outputs a preset direct current, a load connection part which has the same rated current as a constant current source, a load connection part which has a less rated current than the constant current source, a load connection part which has a greater rated current than the constant current source, a load connection part which changes from case to case and has a less or greater rated current than a constant current source, and a circuit and an algorithm which protect or control them.
Abstract translation: 本发明涉及向串联连接的各种串联负载提供恒流直流电力的系统。 本发明包括输出预设直流电流的恒流直流电源部分，与恒流源具有相同额定电流的负载连接部分，具有比恒定电流源更小的额定电流的负载连接部分 具有比恒定电流源更大的额定电流的负载连接部，负载连接部，其从情况变化到具有比恒定电流源小的或更大的额定电流;以及电路和算法，其保护或 控制他们
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公开(公告)号：KR1020110010539A
公开(公告)日：2011-02-01
申请号：KR1020090125467
申请日：2009-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/0445 , H01L31/0224 , H01L31/0236
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0224 , H01L31/0236
Abstract: PURPOSE: A CIGS solar battery and a manufacturing method thereof are provided to maximize energy conversion efficiency by minimizing sunlight which is reflected from the surface of a window electrode layer. CONSTITUTION: A lower electrode layer is formed on a substrate. An optical absorption layer(30) is formed on the lower electrode layer. A buffer layer(40) comprises a plurality of protrusions. A window electrode layer(50) is unevenly bent on the buffer layer along the plurality of protrusions.
Abstract translation: 目的：提供CIGS太阳能电池及其制造方法，以通过使从窗电极层的表面反射的太阳光最小化来最大化能量转换效率。 构成：在基板上形成下电极层。 在下电极层上形成有光吸收层（30）。 缓冲层（40）包括多个突起。 窗口电极层（50）沿着多个突起在缓冲层上不均匀地弯曲。
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公开(公告)号：KR100868530B1
公开(公告)日：2008-11-13
申请号：KR1020070046618
申请日：2007-05-14
Applicant: 한국전자통신연구원
IPC: H01L33/16
Abstract: 본 발명은 질화물 반도체 발광 소자에 관한 것이다. 본 발명에 따른 질화물 반도체 발광 소자는 우르짜이트 격자구조를 갖는 Ga-face로 성장된 질화물 반도체로 구성된 발광 소자에 있어서, 기판 상에 완충층, 제 1 p-형 컨택층, 제 2 p-형 컨택층, 제 1 정공확산층, 제 2 정공확산층, 발광활성 영역, 제 2 전자확산층, 제 1 전자확산층, 제 2 n-형 컨택층 및 제 1 n-형 컨택층이 순차적으로 적층된 구조이다.
이와 같은 구조는 통상적으로 Ga-face로 성장된 우르짜이트 격자 구조에서 발생하는 자발 분극 및 삐에조 전기적 분극 현상으로 인해 이종접합 계면에 형성되는 준2차원 자유전자 및 자유정공 기체를 효과적으로 이용할 수 있어, 발광 소자의 발광면에서 발광의 균일도를 개선하고, 그 결과 소자의 전체 발광면에서 발광 효율을 높인다.
질화물 반도체, 발광 소자-
公开(公告)号：KR1020040035102A
公开(公告)日：2004-04-29
申请号：KR1020020063836
申请日：2002-10-18
Applicant: 한국전자통신연구원
IPC: H01L29/20
CPC classification number: H01L29/452 , H01L29/2003 , H01L29/7787
Abstract: PURPOSE: A nitride semiconductor FET(Field Effect Transistor) and a manufacturing method thereof are provided to be capable of increasing the current inflow efficiency of a source/drain ohmic electrode and preventing the thermal degradation of the source/drain ohmic electrode due to high temperature exothermic reaction. CONSTITUTION: A nitride semiconductor FET is provided with a substrate(100), the first semiconductor layer(104) formed on the substrate, the second semiconductor pattern(108a) formed on the first semiconductor layer, and a two-dimensional electron gas layer(106) between the first semiconductor layer and the second semiconductor pattern. The nitride semiconductor FET further includes a 'T' shaped gate(118) connected with the second semiconductor pattern and a source/drain ohmic electrode(114) formed at both sides of the second semiconductor pattern on the first semiconductor layer. At this time, the source/drain ohmic electrode is completed by sequentially forming an Ni(or Cr)/In/Mo(or W)/Au layer.
Abstract translation: 目的：提供一种氮化物半导体FET（场效应晶体管）及其制造方法，其能够提高源极/漏极欧姆电极的电流流入效率，并防止由于高温引起的源极/漏极欧姆电极的热劣化 放热反应 构成：氮化物半导体FET设置有基板（100），形成在基板上的第一半导体层（104），形成在第一半导体层上的第二半导体图案（108a）和二维电子气体层（ 106）在第一半导体层和第二半导体图案之间。 氮化物半导体FET还包括与第二半导体图案连接的“T”形栅极（118）和形成在第一半导体层上的第二半导体图案的两侧的源极/漏极欧姆电极（114）。 此时，通过依次形成Ni（或Cr）/ In / Mo（或W）/ Au层来完成源极/漏极欧姆电极。
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Patent Agency Ranking
公开(公告)号：KR100319759B1
公开(公告)日：2002-01-09
申请号：KR1019990061212
申请日：1999-12-23
Applicant: 한국전자통신연구원
IPC: H01S5/32
Abstract: InP 계열의열적불안정성과기판의기하학적구조에따른성장특성의불균일을개선하기위한선택적결정성장법을이용한반도체층성장방법및 그를이용한굴절율보상형분산궤환레이저다이오드제조방법에관한것으로, 이를위한본 발명은반도체층의성장 InP 기판상에 InGaAs흡수층및 InP캡층을형성하는제 1 단계, 상기 InP캡층상에상기 InGaAs층을보호하기위한유전체박막을형성하는제 2 단계, 상기유전체박막을보호막으로하여상기 InP기판상에 InP평탄층을형성하는제 3 단계, 상기유전체박막을보호막으로하여상기 InP평탄층상에 InGaAsP 굴절율보상층을성장시키는제 4 단계를포함하여이루어짐을특징으로한다.
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公开(公告)号：KR1020000033364A
公开(公告)日：2000-06-15
申请号：KR1019980050204
申请日：1998-11-23
Applicant: 한국전자통신연구원
IPC: G01N21/00
Abstract: PURPOSE: A device for photo activation is provided. CONSTITUTION: A device for photo activation comprises an upper unit(10) having a through hole, first and second helical units being formed at its inner circumferential surface; a temperature adjusting unit(30) having a through hole in its longitudinal direction, a helical unit to be connected to the second helical unit, and two protruding units having a temperature adjusting wire therebetween, the lower protruding unit having an insertion hole; an optical fiber receiving means(20) having an optical fiber receiving unit for receiving an optical fiber, being received in the through hole of the temperature adjusting unit(30), and being connected to the first helical unit; a spring pin unit(40) received in the insertion hole of the lower protruding unit; a connecting unit(50) having a plurality of second through holes; and a sample stay unit(60) having a helical unit on its outer circumferential surface to be connected to a first center through unit, and having a turn plate. As a result, the optical fiber and the solid sample can be directly bonded to each other, thereby efficiently achieving photo activation of semiconductor, super conductor, polymer and other solid materials.
Abstract translation: 目的：提供一种用于照片激活的设备。 构成：用于光激活的装置包括具有通孔的上单元（10），第一和第二螺旋单元在其内圆周表面上形成; 温度调节单元（30），其纵向具有通孔，与第二螺旋单元连接的螺旋单元和两个具有温度调节线的突出单元，所述下突出单元具有插入孔; 具有接收光纤的光纤接收单元的光纤接收装置（20）被容纳在温度调节单元（30）的通孔中，并连接到第一螺旋单元; 弹簧销单元（40），其容纳在下突出单元的插入孔中; 连接单元（50），具有多个第二通孔; 以及具有在其外周面上具有螺旋单元以连接到第一中心通过单元并具有转板的样品滞留单元（60）。 结果，可以将光纤和固体样品直接接合，从而有效地实现半导体，超导体，聚合物等固体材料的光活化。
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公开(公告)号：KR100258098B1
公开(公告)日：2000-06-01
申请号：KR1019970065705
申请日：1997-12-03
Applicant: 한국전자통신연구원
IPC: H01L29/868 , H01L31/10
CPC classification number: Y02E10/50
Abstract: PURPOSE: An electro-optical oscillator using two negative resistance diodes inversely parallel connected is provided to apply in exchange of electro-optical signals and wired/wireless signal processing by modulating the oscillation signal of the electric circuit itself and the optical input induced by it. CONSTITUTION: A first PIN(positive intrinsic negative) diode(100) and a second PIN diode(200) are inversely parallel connected on a semi-insulating compound semiconductor plate(10). Each of the first PIN diode(100) and the second PIN diode(200) has type n semiconductor electrode(31), optical active intermediate layer for electro-optical absorption(42,43) and a type p semiconductor(51). The first PIN diode(100) and the second PIN diode(200) have negative resistance optical current and voltage characteristics when a laser is illuminated. The first PIN diode(100) and the second PIN diode(200) are inversely parallel connected to external source.
Abstract translation: 目的：使用两个逆并联连接的负电阻二极管的电光振荡器，以通过调制电路本身的振荡信号和由其引起的光输入来交换电光信号和有线/无线信号处理。 构成：在半绝缘化合物半导体板（10）上反向并联连接第一PIN（正本征负二极管）（100）和第二PIN二极管（200）。 第一PIN二极管（100）和第二PIN二极管（200）中的每一个具有n型半导体电极（31），用于电光吸收的光学活性中间层（42,43）和p型半导体（51）。 当激光被照亮时，第一PIN二极管（100）和第二PIN二极管（200）具有负电阻光电流和电压特性。 第一PIN二极管（100）和第二PIN二极管（200）反向并联连接到外部源。
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公开(公告)号：KR100251534B1
公开(公告)日：2000-04-15
申请号：KR1019970065336
申请日：1997-12-02
Applicant: 한국전자통신연구원
CPC classification number: Y02E10/50
Abstract: PURPOSE: A method for generating a multi-peak using a flank photo resonant transmission device is provided to deform a part of a structure of a dual barrier and generate a multi-peak characteristic by irradiating energy more than a band gap of an interval layer to a frank of a resonant transmission device having the structure of the dual barrier. CONSTITUTION: A beam having higher energy than a band gap of an interval layer is irradiated to a resonant transmission device(21) of a dual barrier structure(22) including interval layers formed on both ends. A multi-peak characteristic is generated by a difference between a resonant transmission condition of a beam absorption region and a resonant transmission condition of a non-beam absorption region. The resonant transmission device(21) has a diameter corresponding to two times to ten times of a reducing length of the absorbed beam.
Abstract translation: 目的：提供使用侧面光电共振传输装置产生多峰的方法，以使双重屏障的结构的一部分变形，并通过将间隔层的带隙照射的能量照射到多峰特性上而产生多峰特性 具有双重屏障结构的谐振传输装置的坦克。 构成：具有比间隔层的带隙高的能量的光束被照射到包括形成在两端的间隔层的双重屏障结构（22）的谐振传输装置（21）。 通过光束吸收区域的谐振传播条件与非光束吸收区域的谐振传输条件之间的差产生多峰特性。 谐振传输装置（21）具有对应于吸收光束的减小长度的两倍至十倍的直径。
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公开(公告)号：KR1019960027095A
公开(公告)日：1996-07-22
申请号：KR1019940033468
申请日：1994-12-09
Applicant: 한국전자통신연구원
Inventor： 이규석
Abstract: 본 발명은 1.55μm 발진파장의 분배 브락 반사경(DBR) 구조의 레이저로부터 수백기가 내지 수 테라 헤르쯔 급에 이르는 반복률을 갖는 안정된 펄스열을 생성하는 초격 회절판 구조(super structure grating)의 분배 브락 반사경의 설계를 목적으로 하는 것으로, 기존의 집적화된 4구간 DBR 레이저 구조내의 균일한 회절판 구조 대신에 수개의 샘플링 구간으로 이루어지는 초격 회절판 구조의 분배 브락 반사경을 구성한다.
본 발명에 따른 반도체 레이저는 수 테라 헤르쯔 급의 반복률을 갖는 안전한 펄스열을 발진할 수 있게 됨으로써 고속 광통신을 위한 광원 및 광메모리 소자로서 응용될 수 있다.
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