公开(公告)号：KR1020140044598A

公开(公告)日：2014-04-15

申请号：KR1020120110759

申请日：2012-10-05

Applicant: 한국전자통신연구원

Inventor： 차홍기 ,  황치선 ,  안성덕 ,  조경익

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/06 ,  H01L29/78696

Abstract: A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a gate electrode on a substrate, an active layer which is adjacent to the gate electrode, a gate insulating layer between the gate electrode and the active layer, and source/drain electrodes which are connected to the active layer. The active layer includes a first active layer on the substrate and a second active layer on the first active layer. The first active layer and the second active layer include the same oxide semiconductor. The oxygen content of the oxide semiconductor in the first and second active layers is different from each other.

Abstract translation: 提供薄膜晶体管及其制造方法。 薄膜晶体管包括在基板上的栅电极，与栅电极相邻的有源层，栅电极和有源层之间的栅极绝缘层，以及连接到有源层的源/漏电极。 有源层包括衬底上的第一有源层和第一有源层上的第二有源层。 第一有源层和第二有源层包括相同的氧化物半导体。 第一和第二有源层中的氧化物半导体的氧含量彼此不同。

公开(公告)号：KR1020140076106A

公开(公告)日：2014-06-20

申请号：KR1020120144265

申请日：2012-12-12

Applicant: 한국전자통신연구원

Inventor： 차홍기 ,  안성덕 ,  황치선

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/51

Abstract: A transistor according to one embodiment of the present invention includes an active layer and a gate insulating layer which touches the active layer. The active layer and the gate insulating layer include the same oxide. The oxygen content of the oxide of the gate insulating layer is higher than the oxygen content of the oxide of the active layer. Because the active layer and the gate insulating layer have the same material, high charge mobility in the active layer is obtained in driving the transistor. In manufacturing the transistor, the active layer and the gate insulating layer are formed by depositing the same material in the same sputtering chamber while changing oxygen partial pressure ratios.

Abstract translation: 根据本发明的一个实施例的晶体管包括接触有源层的有源层和栅极绝缘层。 有源层和栅极绝缘层包括相同的氧化物。 栅极绝缘层的氧化物的氧含量高于有源层的氧化物的氧含量。 由于有源层和栅极绝缘层具有相同的材料，因此在驱动晶体管时获得有源层中的高电荷迁移率。 在制造晶体管时，通过在相同的溅射室中沉积相同的材料同时改变氧气分压比来形成有源层和栅极绝缘层。