公开(公告)号：KR100836953B1

公开(公告)日：2008-06-11

申请号：KR1020070067428

申请日：2007-07-05

Applicant: 한국표준과학연구원

Inventor： 이민규 ,  유리유레프 ,  조양구 ,  이확주 ,  김주황

IPC: H01L21/66

Abstract: A soft X-ray reflection apparatus for measuring a thickness of silicon compound formed on a silicon substrate is provided to perform a correct thickness measurement process by obtaining accurately an angle of light. A target(120) is formed to convert an electron beam(110) to an X-ray(121). The target is made of one or more elements of W, Re, and Os or is coated with one or more compounds. A soft X-ray spectrum single crystal(130) is formed to introduce a soft X-ray(131) from the target onto a sample(1) as a silicon substrate having a silicon compound. A detector(140) detects a degree of energy absorbed into the silicon substrate while the soft X-ray reflected from the soft X-ray spectrum single crystal is absorbed into the silicon substrate. An analyzer(150) analyzes an incident angle and an output angle of the soft X-ray by using the degree of the absorbed energy.

Abstract translation: 提供了用于测量形成在硅衬底上的硅化合物的厚度的软X射线反射设备，以通过准确地获得光的角度来执行正确的厚度测量过程。 形成靶（120）以将电子束（110）转换成X射线（121）。 靶由W，Re和Os的一种或多种元素制成或涂覆有一种或多种化合物。 形成软X射线光谱单晶（130），以将来自靶的软X射线（131）引入作为具有硅化合物的硅衬底的样品（1）上。 当从软X射线光谱单晶反射的软X射线被吸收到硅衬底中时，检测器（140）检测吸收到硅衬底中的能量的程度。 分析器（150）通过使用吸收能量的程度来分​​析软X射线的入射角度和输出角度。