신규 고내열 폴리벤즈옥사졸 화합물, 이를 포함하는 유기절연체 형성용 조성물 및 이를 이용한 박막 트랜지스터
    2.
    发明授权
    신규 고내열 폴리벤즈옥사졸 화합물, 이를 포함하는 유기절연체 형성용 조성물 및 이를 이용한 박막 트랜지스터 有权
    新型高耐热聚苯并噻唑,其组成包含其形成有机栅绝缘体和使用其的薄膜晶体管

    公开(公告)号:KR101302418B1

    公开(公告)日:2013-08-30

    申请号:KR1020120036246

    申请日:2012-04-06

    Abstract: PURPOSE: A polymer compound is provided to have excellent chemical resistance, especially base resistance, excellent insulating performance, and heat resistance by a solution process. CONSTITUTION: A polymer compound is represented by chemical formula 1. A polymer compound having a repeating unit represented by chemical formula 1 can be dissolved into dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, acetone, and ethylacetate. A thin film transistor includes a glass or plastic substrate (1), a gate electrode (2), an organic insulating film (3), an organic semiconductor layer or an inorganic semiconductor layer (4), a source electrode (5), and a drain electrode (6). The organic insulating film includes the polymer compound.

    Abstract translation: 目的:提供高分子化合物以具有优异的耐化学性,特别是耐碱性,优异的绝缘性能和通过溶液方法的耐热性。 构成:高分子化合物由化学式1表示。具有化学式1表示的重复单元的高分子化合物可以溶解在二甲基乙酰胺,二甲基甲酰胺,N-甲基-2-吡咯烷酮,丙酮,乙酸乙酯中。 薄膜晶体管包括玻璃或塑料基板(1),栅电极(2),有机绝缘膜(3),有机半导体层或无机半导体层(4),源电极(5)和 漏电极(6)。 有机绝缘膜包括高分子化合物。

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