公开(公告)号：KR100887805B1

公开(公告)日：2009-03-09

申请号：KR1020070092367

申请日：2007-09-12

Applicant: 현대자동차주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 한민구 ,  지인환 ,  조규헌 ,  김수성 ,  임준채

IPC: H01L29/70 ,  G05F1/10

CPC classification number: H01L27/0266 ,  H01L29/7302

Abstract: An apparatus for protecting insulated gate bipolar transistor is provided to strengthen a protection of an IGBT(Insulated Gate Bipolar Transistor) module by integrating a protective circuit inside the IGBT. A main IGBT(100) includes a p-type floating well(110). A current detecting circuit includes a first MOSFET(Metal Oxide Semiconductor Field Effect Transistor)(210). The first MOSFET detects a current flowing through the p-type floating well, and supplies a voltage to a gate of a second MOSFET(310) inside a pull-down circuit. The second MOSFET turns on by supplying the voltage to the current detecting circuit, and reduces a gate voltage of the main IGBT. A voltage of the p-type floating well is supplied to a gate and a drain of the first MOSFET device.

Abstract translation: 提供一种用于保护绝缘栅双极晶体管的装置，通过在IGBT内集成保护电路来加强对IGBT（绝缘栅双极晶体管）模块的保护。 主IGBT（100）包括p型浮动井（110）。 电流检测电路包括第一MOSFET（金属氧化物半导体场效应晶体管）（210）。 第一MOSFET检测流过p型浮动阱的电流，并向下拉电路内的第二MOSFET（310）的栅极提供电压。 第二个MOSFET通过向电流检测电路提供电压而导通，并降低主IGBT的栅极电压。 p型浮置阱的电压被提供给第一MOSFET器件的栅极和漏极。

公开(公告)号：KR100841398B1

公开(公告)日：2008-06-26

申请号：KR1020070020391

申请日：2007-02-28

Applicant: 한국원자력연구원 ,  재단법인서울대학교산학협력재단

Inventor： 한민구 ,  지인환 ,  하민우 ,  조규헌 ,  이병철 ,  한영환 ,  박성희

IPC: H01L29/73

Abstract: A method and an apparatus for improving an electrical characteristic of a BRT device are provided to manufacture the BRT device having a high performance switching by irradiating an optimized electron beam on the BRT device. An electron beam is irradiated on a BRT(Base Resistance controlled Thyristor) device to extract a first specific condition value of the electron beam which shortens a lifespan of minor carrier. The electron beam of the extracted first specific condition value is irradiated on other BRT device. The other BRT device is subjected to a thermal annealing process to extract a second specific condition value which increases a threshold voltage. Another BRT device is subjected to the thermal annealing process of the extracted specific condition value.

Abstract translation: 提供一种用于改善BRT装置的电气特性的方法和装置，以通过在BRT装置上照射优化的电子束来制造具有高性能切换的BRT装置。 电子束照射在BRT（基极电阻控制晶闸管）器件上，以提取缩短次要载流子寿命的电子束的第一特定条件值。 提取的第一特定条件值的电子束照射在其他BRT装置上。 对其他BRT器件进行热退火处理，以提取增加阈值电压的第二特定条件值。 对另一BRT装置进行提取的特定条件值的热退火处理。