High power semiconductor multi-chip module e.g. for power electronics

    公开(公告)号:DE19647590A1

    公开(公告)日:1998-05-20

    申请号:DE19647590

    申请日:1996-11-18

    Abstract: The semiconductor chips (25, 26) of the semiconductor module (20) are located on the top side of a metallised ceramic substrate (22) of a first expansion coefft. The substrate underside is located on a base plate (21) of good thermal conductivity and high heat capacity, of a material with a second different expansion coefft. Between the substrate and base plate is fitted an intermediate plate (28) of a material of a third expansion coefft. of a magnitude lying between the first two expansion coeffts. The substrate is firmly coupled to the intermediate plate top side, while the base plate is secured to its underside.

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