公开(公告)号：JPH10149902A

公开(公告)日：1998-06-02

申请号：JP27735597

申请日：1997-10-09

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: C04B35/00 ,  H01C3/20 ,  H01C7/02 ,  H02H9/02 ,  C04B35/495

Abstract: PROBLEM TO BE SOLVED: To develop and reform a positive property thermistor so that it may be suitable for a short-circuit current limiter of power of >=1MW, with rather small power constitution during normal operation. SOLUTION: This is a positive property thermistor for limitation of an overcurrent, and this has relatively small electric resistance during a normal operation, and this shows relatively large temperature rise, therefore resistance increases, in the case of slight energy increase, and in this positive property thermistor which has at least one heat-resistant metallic compound, at least one heat-resistant metallic compound is the carbide or a boride of heat-resistant metal, and at least one heat-resistant metal is iridium, or yttrium, or a metal in the fourth to sixth sub group of the second main group in the periodic table.

公开(公告)号：JP2000332196A

公开(公告)日：2000-11-30

申请号：JP2000136431

申请日：2000-03-31

Applicant: ABB RESEARCH LTD

Inventor： STEIMER PETER DR ,  STUCK ALEXANDER DR ,  ZELLER HANSRUEDI ,  ZEHRINGER RAYMOND DR

IPC: H01L21/52 ,  H01L23/13 ,  H01L23/373 ,  H01L23/60 ,  H01L25/07 ,  H01L25/18 ,  H05K1/02 ,  H05K1/03 ,  H05K1/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor module of a type where dielectric strength is improved. SOLUTION: In the case of the semiconductor module with a base element 2 and at least one insulation element that is arranged at the base element 2, metal layers 4 and 5 are supplied to the opposite surface of the insulation elements, at least one semiconductor element 6 being arranged at the insulation element 3 is provided, and at least one of the metal layers 4 and 5 is designed while it is curved, thus minimizing the increase in the excessive field of an end part region and increasing the dielectric strength of the semiconductor module.

公开(公告)号：DE19647590A1

公开(公告)日：1998-05-20

申请号：DE19647590

申请日：1996-11-18

Applicant: ABB RESEARCH LTD

Inventor： FREY TONY DR ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: H01L23/373 ,  H01L25/07 ,  H01L25/18 ,  H01L23/36

Abstract: The semiconductor chips (25, 26) of the semiconductor module (20) are located on the top side of a metallised ceramic substrate (22) of a first expansion coefft. The substrate underside is located on a base plate (21) of good thermal conductivity and high heat capacity, of a material with a second different expansion coefft. Between the substrate and base plate is fitted an intermediate plate (28) of a material of a third expansion coefft. of a magnitude lying between the first two expansion coeffts. The substrate is firmly coupled to the intermediate plate top side, while the base plate is secured to its underside.

公开(公告)号：DE19641727A1

公开(公告)日：1998-04-16

申请号：DE19641727

申请日：1996-10-10

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: C04B35/00 ,  H01C3/20 ,  H01C7/02 ,  H02H9/02

公开(公告)号：DE19735531A1

公开(公告)日：1999-02-18

申请号：DE19735531

申请日：1997-08-16

Applicant: ABB RESEARCH LTD

Inventor： ETTER PETER ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H01L23/467 ,  H05K7/20

Abstract: The module (1) has a number of sub-modules (2) with at least one semiconducting chip (3) attached to the top of an electrically insulating, heat conducting substrate (6) with a thermal expansion coefficient matching that of the chip. One sub-module (2) directly in the substrate has a cooler (7) of a good thermal conductor. The cooler is embedded in the underside (6b) of the substrate.

公开(公告)号：IN192638B

公开(公告)日：2004-05-08

申请号：IN916MA1996

申请日：1996-05-30

Applicant: ABB RESEARCH LTD

Inventor： FALLER KURT ,  FREY TONI DR ,  KESER HELMUT ,  STEINRUCK FERDINAND ,  ZEHRINGER RAYMOND DR

IPC: H01L23/48 ,  H01L23/49 ,  H01L25/07 ,  H01L25/18 ,  H01L29/00 ,  H01L23/00

Abstract: The module includes at least one semiconductor chip (2) provided with its respective main electrode pair (2,4). One electrode is provided on a ground plate (5) and the other is in contact with a plunger (8). Also provided are two main connectors (6,7) with the ground plate electrically connected to one of the connectors (6) and the plunger in contact with the other (7). The position of each plunger corresponds to the distance between the contacting electrode of each chip to the corresponding main connector. The plungers are installed between the electrode and connector and are held there by two solder layers (9,10).

公开(公告)号：DE19731858A1

公开(公告)日：1999-01-28

申请号：DE19731858

申请日：1997-07-24

Applicant: ABB RESEARCH LTD

Inventor： WILDNER FRANZ DR ,  ZEHRINGER RAYMOND DR

IPC: H01R13/11 ,  H01R13/115 ,  H01R25/16 ,  H05K9/00 ,  H01R43/16 ,  H05K7/12

Abstract: The plug connector has at least one pair of cooperating contact combs (1), with the individual contact prongs (2) of each contact comb bent into an S shape. The bridge sections (3) of both contact combs are pressed together, with a current conductor or a current rail pressed between their cooperating contact prongs. A pair of cooperating contact combs may be used for each of the external electrodes of a power semiconductor module with a number of power semiconductor chips.