公开(公告)号：JPH10163417A

公开(公告)日：1998-06-19

申请号：JP32435197

申请日：1997-11-26

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR

IPC: H01L23/24 ,  H01L25/07 ,  H01L25/16 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module which can exhibit its insulating performance for a long period of time and can be made insensitive to explosion as highly as possible. SOLUTION: In the power semiconductor module 1, a foam layer is formed on a lower side of a housing cover 3 within a housing 2. The foam 9 not only can mechanically support an injected material 10 to prevent separation of the material 10 but also can absorb a large pressure increase caused by a compression in short-circuiting. Thereby a compensation volume can be created without destroying the housing 2. The housing 2 can keep its closed state without exploding the material into the environment.

公开(公告)号：JPH10149902A

公开(公告)日：1998-06-02

申请号：JP27735597

申请日：1997-10-09

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: C04B35/00 ,  H01C3/20 ,  H01C7/02 ,  H02H9/02 ,  C04B35/495

Abstract: PROBLEM TO BE SOLVED: To develop and reform a positive property thermistor so that it may be suitable for a short-circuit current limiter of power of >=1MW, with rather small power constitution during normal operation. SOLUTION: This is a positive property thermistor for limitation of an overcurrent, and this has relatively small electric resistance during a normal operation, and this shows relatively large temperature rise, therefore resistance increases, in the case of slight energy increase, and in this positive property thermistor which has at least one heat-resistant metallic compound, at least one heat-resistant metallic compound is the carbide or a boride of heat-resistant metal, and at least one heat-resistant metal is iridium, or yttrium, or a metal in the fourth to sixth sub group of the second main group in the periodic table.

公开(公告)号：JP2000332196A

公开(公告)日：2000-11-30

申请号：JP2000136431

申请日：2000-03-31

Applicant: ABB RESEARCH LTD

Inventor： STEIMER PETER DR ,  STUCK ALEXANDER DR ,  ZELLER HANSRUEDI ,  ZEHRINGER RAYMOND DR

IPC: H01L21/52 ,  H01L23/13 ,  H01L23/373 ,  H01L23/60 ,  H01L25/07 ,  H01L25/18 ,  H05K1/02 ,  H05K1/03 ,  H05K1/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor module of a type where dielectric strength is improved. SOLUTION: In the case of the semiconductor module with a base element 2 and at least one insulation element that is arranged at the base element 2, metal layers 4 and 5 are supplied to the opposite surface of the insulation elements, at least one semiconductor element 6 being arranged at the insulation element 3 is provided, and at least one of the metal layers 4 and 5 is designed while it is curved, thus minimizing the increase in the excessive field of an end part region and increasing the dielectric strength of the semiconductor module.

公开(公告)号：JPH11121691A

公开(公告)日：1999-04-30

申请号：JP22956198

申请日：1998-08-14

Applicant: ABB RESEARCH LTD

Inventor： ETTER PETER ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To obtain a power semiconductor module constituted of submodules having integrated heat sinks. SOLUTION: Each of submodules 2 comprises a board 6 having at least a semiconductor chip 3 soldered to its top 6a, while its bottom 6b is sealed together with a heat sink 7 having a knob or rib-like AlSiC, CuSiC, AlSi, Al or Cu cooling body 7a. A cooling structure 7b may be directly sealed tougher with the board 6. The power semiconductor module having heat sinks 7 integrated with the submodules 2 is characterized by enhanced reliability and long life, compact design and high power density. The modular structures 2, 7 of this module 1 are compatible with integration with other elements, e.g., control electronics, printed circuit boards and bus bars.

公开(公告)号：DE19641727A1

公开(公告)日：1998-04-16

申请号：DE19641727

申请日：1996-10-10

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: C04B35/00 ,  H01C3/20 ,  H01C7/02 ,  H02H9/02

公开(公告)号：DE19735531A1

公开(公告)日：1999-02-18

申请号：DE19735531

申请日：1997-08-16

Applicant: ABB RESEARCH LTD

Inventor： ETTER PETER ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H01L23/467 ,  H05K7/20

Abstract: The module (1) has a number of sub-modules (2) with at least one semiconducting chip (3) attached to the top of an electrically insulating, heat conducting substrate (6) with a thermal expansion coefficient matching that of the chip. One sub-module (2) directly in the substrate has a cooler (7) of a good thermal conductor. The cooler is embedded in the underside (6b) of the substrate.

公开(公告)号：DE19649798A1

公开(公告)日：1998-06-04

申请号：DE19649798

申请日：1996-12-02

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR

IPC: H01L23/24 ,  H01L25/07 ,  H01L25/16 ,  H01L25/18 ,  H01L23/18

Abstract: In a power semiconductor module (1) with a housing (2) covering a base plate (5) which carries one or more chips (6) and contact lines (7) for connecting the chips to an external connection (8) and to each other, a layer of foam (9) is positioned within the housing below the housing cover (3).

公开(公告)号：DE19648381A1

公开(公告)日：1998-06-04

申请号：DE19648381

申请日：1996-11-22

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER DR ,  VEENSTRA MARTIN

IPC: H01F38/02 ,  H02H9/02

Abstract: The arrangement includes at least one inductive resistance (1, 2) which increases its resistance value suddenly when reaching a pre-settable current limit. The at least one inductive resistance comprises a coil (1-4) with a core (4) from a hard-magnetic material, whose relative permeability increases suddenly at overstepping of a pre-settable current limit, according to a magnetic field intensity limit. The hard-magnetic material is preferably a hard ferrite, a neodym-iron-boron alloy, a samarium-cobalt alloy, an aluminum-nickel-cobalt alloy, a selenium-cobalt alloy, an iron-cobalt-vanadium alloy, and/or an alloy of cobalt with at least one rear earth metal.

公开(公告)号：DE19647590A1

公开(公告)日：1998-05-20

申请号：DE19647590

申请日：1996-11-18

Applicant: ABB RESEARCH LTD

Inventor： FREY TONY DR ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND DR

IPC: H01L23/373 ,  H01L25/07 ,  H01L25/18 ,  H01L23/36

Abstract: The semiconductor chips (25, 26) of the semiconductor module (20) are located on the top side of a metallised ceramic substrate (22) of a first expansion coefft. The substrate underside is located on a base plate (21) of good thermal conductivity and high heat capacity, of a material with a second different expansion coefft. Between the substrate and base plate is fitted an intermediate plate (28) of a material of a third expansion coefft. of a magnitude lying between the first two expansion coeffts. The substrate is firmly coupled to the intermediate plate top side, while the base plate is secured to its underside.