公开(公告)号：JP2002141364A

公开(公告)日：2002-05-17

申请号：JP2001249801

申请日：2001-08-21

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  ZWICK FABIAN

IPC: H01L21/60 ,  H01L21/48 ,  H01L21/52 ,  H01L23/051 ,  H01L23/367 ,  H01L23/492

Abstract: PROBLEM TO BE SOLVED: To provide a method for more simply manufacturing a buffer element and the more stable buffer element. SOLUTION: The method for manufacturing the buffer element manufactures the self-supported buffer element having a region capable of substantially independently expanding or contracting in order to reduce a mechanical stress between two materials having different thermal expansion coefficients. The method comprises the steps of deforming a metal sheet (1) to three-dimensional structures (1', 1") so as to divide the structures (1', 1") into regions capable of substantially independently expanding and contracting, resultantly pressing the structures (1', 1"), and working to form a structure plate (P). This method can be used to manufacture the buffer element. The buffer element is simply manufactured, and particularly an application to a semiconductor technique can be stably and simply handled.

公开(公告)号：JP2003197852A

公开(公告)日：2003-07-11

申请号：JP2002364006

申请日：2002-12-16

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG

IPC: H01L23/12 ,  H01L21/48 ,  H01L23/13 ,  H01L23/498 ,  H01L25/04 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor module which has an improved dielectric strength and can be manufactured easily. SOLUTION: The semiconductor module comprises a base element (1), an insulating element (2) which is metallized on both sides and rests on the base element by one of the two metallizations, and at least one semiconductor element (6) arranged on the other of the two metallizations. An electrically insulating layer (51) is arranged in the edge region of the insulating element (2), the edge region of this insulating element (2) forming a common planar surface with the surface of the second metallization. The blunting of the edges and corners of the metallization by level embedding of the insulating element having an entirely metalized surface improves the insulating property of the semiconductor module in the area of the critical electrical field region. Moreover, the arrangement in one plane permits simple and low-cost production. COPYRIGHT: (C)2003,JPO

公开(公告)号：AU2003271495A1

公开(公告)日：2004-06-18

申请号：AU2003271495

申请日：2003-10-27

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  KESER HELMUT

IPC: H01L23/29 ,  H01L23/31 ,  H01L25/16

Abstract: A method for encapsulating a semiconductor module has the module (4) mounted on a support base (2) via an insulating layer (5) and using a thermoplastic adhesive to mould the housing (1) and encapsulate the module. Some circuit boards etc. (7) are also bonded into the housing as are the electrical connections. The housing and encapsulation are pour moulded at between 150 and 220 deg. C. and at much lower pressures than by injection moulding.

公开(公告)号：DE50307101D1

公开(公告)日：2007-05-31

申请号：DE50307101

申请日：2003-10-27

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  KESER HELMUT

IPC: H01L23/29 ,  H01L23/31 ,  H01L25/16

Abstract: A method for encapsulating a semiconductor module has the module (4) mounted on a support base (2) via an insulating layer (5) and using a thermoplastic adhesive to mould the housing (1) and encapsulate the module. Some circuit boards etc. (7) are also bonded into the housing as are the electrical connections. The housing and encapsulation are pour moulded at between 150 and 220 deg. C. and at much lower pressures than by injection moulding.