公开(公告)号：JP2003197864A

公开(公告)日：2003-07-11

申请号：JP2002353268

申请日：2002-12-05

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  LINDER STEFAN ,  ERNE PATRICK

IPC: H01L25/10 ,  H01L23/48 ,  H01L25/11 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module having a unit with a large blocking voltage per physical height. SOLUTION: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprises at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximum blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002141364A

公开(公告)日：2002-05-17

申请号：JP2001249801

申请日：2001-08-21

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  ZWICK FABIAN

IPC: H01L21/60 ,  H01L21/48 ,  H01L21/52 ,  H01L23/051 ,  H01L23/367 ,  H01L23/492

Abstract: PROBLEM TO BE SOLVED: To provide a method for more simply manufacturing a buffer element and the more stable buffer element. SOLUTION: The method for manufacturing the buffer element manufactures the self-supported buffer element having a region capable of substantially independently expanding or contracting in order to reduce a mechanical stress between two materials having different thermal expansion coefficients. The method comprises the steps of deforming a metal sheet (1) to three-dimensional structures (1', 1") so as to divide the structures (1', 1") into regions capable of substantially independently expanding and contracting, resultantly pressing the structures (1', 1"), and working to form a structure plate (P). This method can be used to manufacture the buffer element. The buffer element is simply manufactured, and particularly an application to a semiconductor technique can be stably and simply handled.

公开(公告)号：JP2003197861A

公开(公告)日：2003-07-11

申请号：JP2002350739

申请日：2002-12-03

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  HAMIDI AMINA ,  MEYSENC LUC ,  KAUFMANN STEFAN ,  ERNE PATRICK

IPC: H01L23/48 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor submodule and power semiconductor module which have higher blocking voltages and are substantially equal in physical height to each other. SOLUTION: The power semiconductor module (1) has at least two semiconductor chips (21, 22), which have two main electrodes 3 and 4 between two main connection parts (6, 7) and also have one main electrode (3) applied with a contact force by a contact die (8) to press the other electrode (4) against a base plate (5). Those two semiconductor chips (21, 22) are electrically connected in series between two main connection parts (6, 7) of the power semiconductor submodule. COPYRIGHT: (C)2003,JPO

公开(公告)号：DE10117775A1

公开(公告)日：2002-10-17

申请号：DE10117775

申请日：2001-04-09

Applicant: ABB RESEARCH LTD

Inventor： ZWICK FABIAN ,  STUCK ALEXANDER ,  ZEHRINGER RAYMOND

IPC: H01L21/48 ,  H01L23/14 ,  H01L23/373 ,  H01L21/58

Abstract: Power semiconductor module comprises a semiconductor chip (16) arranged on a flat electrode (24) connected to a base plate (11) via an insulating intermediate layer (20). The intermediate layer has air holes having an average diameter of less than 1 microns m, preferably 10-100 nm. An Independent claim is also included for a process for the production of the power semiconductor module. Preferred Features: The intermediate layer is formed as a ceramic film consisting of a nano-ceramic, in which the film has a grain size of 10-100 nm. The edges and corners of the electrode are rounded and covered by the intermediate layer. The electrode is made from copper.