公开(公告)号：DE10135348A1

公开(公告)日：2003-01-30

申请号：DE10135348

申请日：2001-07-20

Applicant: ABB RESEARCH LTD

Inventor： BERTH MATTHIAS ,  KESER HELMUT

IPC: H01L23/538 ,  H01L23/14 ,  H01L25/07

Abstract: The semiconductor modules etc. are provided with at least one structure (8), consisting of electrically conductive layers (84,85), separated by dielectric (83) and forming at least one capacity .At least one conductive layer is formed by conductive tracks (840,840',840'',850,850'), separated by dielectric. Partial capacities are formed by the conductive layers and conductive tracks. Preferably. the structure is formed in the edge regions of the semiconductor modules, etc. Independent claims are included for semiconductor module and its use.

公开(公告)号：DE59611245D1

公开(公告)日：2005-08-18

申请号：DE59611245

申请日：1996-07-26

Applicant: ABB RESEARCH LTD

Inventor： FALLER KURT ,  FREY DR ,  KESER HELMUT ,  STEINRUCK FERDINAND ,  ZEHRINGER DR

IPC: H01L23/48 ,  H01L23/49 ,  H01L25/07 ,  H01L25/18

Abstract: The module includes at least one semiconductor chip (2) provided with its respective main electrode pair (2,4). One electrode is provided on a ground plate (5) and the other is in contact with a plunger (8). Also provided are two main connectors (6,7) with the ground plate electrically connected to one of the connectors (6) and the plunger in contact with the other (7). The position of each plunger corresponds to the distance between the contacting electrode of each chip to the corresponding main connector. The plungers are installed between the electrode and connector and are held there by two solder layers (9,10).

公开(公告)号：AU2003271495A1

公开(公告)日：2004-06-18

申请号：AU2003271495

申请日：2003-10-27

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  KESER HELMUT

IPC: H01L23/29 ,  H01L23/31 ,  H01L25/16

Abstract: A method for encapsulating a semiconductor module has the module (4) mounted on a support base (2) via an insulating layer (5) and using a thermoplastic adhesive to mould the housing (1) and encapsulate the module. Some circuit boards etc. (7) are also bonded into the housing as are the electrical connections. The housing and encapsulation are pour moulded at between 150 and 220 deg. C. and at much lower pressures than by injection moulding.

公开(公告)号：DE4317215A1

公开(公告)日：1994-12-01

申请号：DE4317215

申请日：1993-05-24

Applicant: ABB RESEARCH LTD

Inventor： LAMBILLY HERVE DE DR ,  GUTFLEISCH FRIEDRICH DR ,  KESER HELMUT

IPC: H01T19/02 ,  H01B17/42 ,  H01L29/40

Abstract: Modules, in particular for power semiconductor components which are intended to withstand an operating voltage of 4.5 kV and an insulation voltage of 9.5 kV, require for the critical junction: insulator plate (1) - electrode (2) - air a potential barrier (3) which projects beyond the electrode (2), which is made of copper, by 1 mm - 2 mm at the edges and is separated from an insulator plate (1) which is approximately 0.6 mm - 1 mm thick and made of ceramic. The potential barrier (3) can be a corona ring, a metal clip, a corona cap or a spring strip.

公开(公告)号：DE50307101D1

公开(公告)日：2007-05-31

申请号：DE50307101

申请日：2003-10-27

Applicant: ABB RESEARCH LTD

Inventor： KNAPP WOLFGANG ,  KESER HELMUT

IPC: H01L23/29 ,  H01L23/31 ,  H01L25/16

Abstract: A method for encapsulating a semiconductor module has the module (4) mounted on a support base (2) via an insulating layer (5) and using a thermoplastic adhesive to mould the housing (1) and encapsulate the module. Some circuit boards etc. (7) are also bonded into the housing as are the electrical connections. The housing and encapsulation are pour moulded at between 150 and 220 deg. C. and at much lower pressures than by injection moulding.

公开(公告)号：IN192638B

公开(公告)日：2004-05-08

申请号：IN916MA1996

申请日：1996-05-30

Applicant: ABB RESEARCH LTD

Inventor： FALLER KURT ,  FREY TONI DR ,  KESER HELMUT ,  STEINRUCK FERDINAND ,  ZEHRINGER RAYMOND DR

IPC: H01L23/48 ,  H01L23/49 ,  H01L25/07 ,  H01L25/18 ,  H01L29/00 ,  H01L23/00

Abstract: The module includes at least one semiconductor chip (2) provided with its respective main electrode pair (2,4). One electrode is provided on a ground plate (5) and the other is in contact with a plunger (8). Also provided are two main connectors (6,7) with the ground plate electrically connected to one of the connectors (6) and the plunger in contact with the other (7). The position of each plunger corresponds to the distance between the contacting electrode of each chip to the corresponding main connector. The plungers are installed between the electrode and connector and are held there by two solder layers (9,10).