公开(公告)号：JP2003197864A

公开(公告)日：2003-07-11

申请号：JP2002353268

申请日：2002-12-05

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  LINDER STEFAN ,  ERNE PATRICK

IPC: H01L25/10 ,  H01L23/48 ,  H01L25/11 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module having a unit with a large blocking voltage per physical height. SOLUTION: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprises at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximum blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. COPYRIGHT: (C)2003,JPO