公开(公告)号：JP2003197864A

公开(公告)日：2003-07-11

申请号：JP2002353268

申请日：2002-12-05

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  LINDER STEFAN ,  ERNE PATRICK

IPC: H01L25/10 ,  H01L23/48 ,  H01L25/11 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module having a unit with a large blocking voltage per physical height. SOLUTION: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprises at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximum blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003197861A

公开(公告)日：2003-07-11

申请号：JP2002350739

申请日：2002-12-03

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  HAMIDI AMINA ,  MEYSENC LUC ,  KAUFMANN STEFAN ,  ERNE PATRICK

IPC: H01L23/48 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor submodule and power semiconductor module which have higher blocking voltages and are substantially equal in physical height to each other. SOLUTION: The power semiconductor module (1) has at least two semiconductor chips (21, 22), which have two main electrodes 3 and 4 between two main connection parts (6, 7) and also have one main electrode (3) applied with a contact force by a contact die (8) to press the other electrode (4) against a base plate (5). Those two semiconductor chips (21, 22) are electrically connected in series between two main connection parts (6, 7) of the power semiconductor submodule. COPYRIGHT: (C)2003,JPO

公开(公告)号：WO9926296A2

公开(公告)日：1999-05-27

申请号：PCT/SE9802048

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract translation: SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部件（1,2），每个部件包括一个或多个SiC半导体层并且串联连接在器件的两个相对端子之间，即子半导体器件（1）能够仅承受阻断状态下的低电压 以及能够承受器件阻断状态下的高电压的电压限制部分（2），并且适于通过在器件处于其阻断状态下取得大部分电压来保护所述子半导体器件。

公开(公告)号：SE9700141D0

公开(公告)日：1997-01-20

申请号：SE9700141

申请日：1997-01-20

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  BIJLENGA BO ,  RAMBERG LENNART ,  ROTTNER KURT ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  SCHOENER ADOLF ,  LUNDBERG NILS ,  OESTLING MIKAEL ,  DAHLQUIST FANNY

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/872 ,  H01L

公开(公告)号：SE9502249D0

公开(公告)日：1995-06-21

申请号：SE9502249

申请日：1995-06-21

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725

公开(公告)号：DE69607965D1

公开(公告)日：2000-05-31

申请号：DE69607965

申请日：1996-06-10

Applicant: ABB RESEARCH LTD

Inventor： BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY ,  ZDANSKY LENNART

IPC: H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H02M7/00 ,  H02M7/538 ,  H03K17/08 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/725 ,  H02M1/00 ,  H02H7/12

公开(公告)号：SE9903956D0

公开(公告)日：1999-11-02

申请号：SE9903956

申请日：1999-11-02

Applicant: ABB RESEARCH LTD

Inventor： DANIELSSON BO ,  AABERG ANDERS ,  OVREN CHRISTER ,  KRUSE LENNART ,  VALDEMARSSON STEFAN ,  BAKOWSKI MIETEK ,  BERGMAN KARL ,  BIJLENGA BO ,  HERMANSSON WILLY

IPC: H02M7/5387 ,  H02M

公开(公告)号：SE9603432D0

公开(公告)日：1996-09-20

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

公开(公告)号：SE9603432L

公开(公告)日：1998-03-21

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K17/08

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

公开(公告)号：SE515457C2

公开(公告)日：2001-08-06

申请号：SE9603432

申请日：1996-09-20

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  LUNDBERG PETER ,  PERSSON ANDERS ,  ZDANSKY LENNART

IPC: H03K17/16 ,  H03K17/08

Abstract: A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.