公开(公告)号：EP2544229A1

公开(公告)日：2013-01-09

申请号：EP11172958.8

申请日：2011-07-07

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Schuderer, Juergen ,  Behzadi, Bahar ,  Brem, Franziska

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/07 ,  H01L23/48 ,  H01L23/62 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/83901 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present invention relates to a power semiconductor arrangement (10) comprising a power semiconductor device (12), having an emitter electrode and a collector electrode, wherein the collector electrode is electrically connected to a lower electrode (14) and wherein the emitter electrode is electrically connected to an upper electrode (16), wherein the arrangement (10) further comprises a failure mode contact element (30) and a low temperature melting material (28), the low temperature melting material (28) being arranged between the failure mode contact element (30) and the semiconductor device (12), wherein the failure mode contact element (30) is spring loaded towards the low temperature melting material (28) and comprises at least one contact portion (32) being spaced apart from the lower electrode (14) in a distance being smaller or equal than the thickness of the low temperature melting material (28) in a regular working mode of the power semiconductor arrangement (10). A power semiconductor arrangement (10) according to the invention provides an improved failure mode.

Abstract translation: 本发明涉及包括具有发射极电极和集电极电极的功率半导体器件（12）的功率半导体装置（10），其中集电极电极电连接到下电极（14），并且其中发射极电极是 （10）还包括故障模式接触元件（30）和低温熔化材料（28），所述低温熔化材料（28）布置在所述故障模式 （30）和所述半导体器件（12），其中所述故障模式接触元件（30）朝向所述低温熔融材料（28）被弹簧加载并且包括至少一个接触部分（32），所述接触部分 在所述功率半导体装置（10）的正常工作模式下，所述电极（14）的距离小于或等于所述低温熔化材料（28）的厚度。 根据本发明的功率半导体装置（10）提供了改进的故障模式。