公开(公告)号：EP3176812A1

公开(公告)日：2017-06-07

申请号：EP15197558.8

申请日：2015-12-02

Applicant: ABB Schweiz AG

Inventor： Bartolf, Holger ,  Rahimo, Munaf ,  Knoll, Lars ,  Mihaila, Andrei ,  Minamisawa, Renato

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/739 ,  H01L29/10 ,  H01L29/16

CPC classification number: H01L29/7802 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/7395

Abstract: A wide bandgap semiconductor device is provided comprising an (n-) doped drift layer between a first main side (20) and a second main side (22). On the first main side (20), two n doped source regions (3, 3') which are laterally surrounded by p doped channel layers (4, 4') having a channel layer depth (40). A p+ doped well layer (5) having a well layer depth (50), which is at least as large as the channel layer depth (40) is arranged at the bottom of the source regions 3, 3'. A p++ doped plug (6) having a plug depth (60), which is as least as great as the well layer depth (50), and having a higher doping concentration than the well layer (5), is arranged between the two source regions (3, 3'). On the first side (12), a first main electrode (9) contacts as an ohmic contact at least the two source regions (3, 3') and the plug (6).

Abstract translation: 提供宽带隙半导体器件，其包括在第一主侧（20）和第二主侧（22）之间的（n-）掺杂漂移层。 在第一主侧（20）上，由p沟道层深度（40）的p掺杂沟道层（4,4'）横向围绕的两个n掺杂源极区（3,3'）。 具有至少与沟道层深度（40）一样大的阱层深度（50）的p +掺杂阱层（5）被布置在源极区域3,3'的底部。 具有至少与阱层深度（50）一样大的插塞深度（60）并且具有比阱层（5）更高的掺杂浓度的p ++掺杂插塞（6）被布置在两个源极 区域（3,3'）。 在第一侧（12）上，第一主电极（9）至少作为欧姆接触接触至少两个源区（3,3'）和插塞（6）。