公开(公告)号：EP3240040A1

公开(公告)日：2017-11-01

申请号：EP16167002.1

申请日：2016-04-26

Applicant: ABB Schweiz AG

Inventor： Kopta, Arnost ,  Corvasce, Chiara ,  Rahimo, Munaf ,  Matthias, Sven ,  Janisch, Wolfgang

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7397 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/66348

Abstract: An insulated gate bipolar is produced, wherein the following steps are performed:
(a) providing a lowly n doped substrate (1) having an emitter side (20) and a collector side (27),
(b) forming n and p doped layers on the emitter side (20),
(c) thinning the substrate (1) on the collector side (27),
(d) implanting an n first dopant (82) on the collector side (27) into a depth of at most 2 µm,
(e) forming a first buffer layer (8) by annealing the first dopant (82),
(f) applying a surface layer comprising an n second dopant on top of the collector side (27),
(g) forming a second buffer layer (9) by annealing the second dopant, wherein the second buffer layer (9) having a lower maximum doping concentration than the first buffer layer (8),
(h) applying a p third dopant at the collector side (27),
(i) forming a collector layer (6) by annealing the third dopant.

Abstract translation: 制造绝缘栅双极型，其中执行以下步骤：（a）提供具有发射极侧（20）和集电极侧（27）的低n型掺杂衬底（1），（b）形成n和p掺杂层 在发射极侧（20）上，（c）在集电极侧（27）上使衬底（1）变薄，（d）在集电极侧（27）注入n型第一掺杂剂（82），深度至多为2 （e）通过退火所述第一掺杂剂（82）形成第一缓冲层（8），（f）在所述集电极侧（27）的顶部上施加包含n第二掺杂剂的表面层，（g）形成第二缓冲层 其中所述第二缓冲层（9）具有比所述第一缓冲层（8）更低的最大掺杂浓度，（h）在所述集电极侧（27）施加第三掺杂剂，（ i）通过退火第三掺杂剂形成集电极层（6）。