公开(公告)号：WO2016116177A1

公开(公告)日：2016-07-28

申请号：PCT/EP2015/074289

申请日：2015-10-21

Applicant: ABB TECHNOLOGY AG

Inventor： SIVASUBRAMANIAM, Venkatesh ,  GUILLON, David ,  MORIN, Pauline ,  GUILLEMIN, Remi-Alain ,  HARTMANN, Samuel

IPC: H01L21/48 ,  H01L23/498

CPC classification number: H01L21/4853 ,  H01L23/3735 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a method of generating a power semiconductor module, the method comprising the steps of: a) Providing a carrier layer (12); b) Providing a substrate (14) having a terminal connection area (22); c) Soldering the substrate (14) to the carrier layer (12) by forming a solder layer (20); wherein d) the solder layer (20) is formed such, that a pre-defined cavity (28) is provided in the solder layer (20) adjacent to the substrate (14) and located opposite to the terminal connection area (22); and e) Welding a terminal (24) to the terminal connection area (22) of the substrate (14). The present invention provides a method of generating a power semiconductor module which is especially cost-saving to perform and allows a reliable generation of high quality modules.

Abstract translation: 本发明涉及一种产生功率半导体模块的方法，所述方法包括以下步骤：a）提供载体层（12）; b）提供具有端子连接区域（22）的基板（14）; c）通过形成焊料层（20）将衬底（14）焊接到载体层（12）上; 其中d）形成所述焊料层（20），使得在所述焊料层（20）中邻近所述基板（14）设置预定义的空腔（28）并且位于所述端子连接区域（22）的相对的位置。 以及e）将端子（24）焊接到所述基板（14）的端子连接区域（22）。 本发明提供一种生成功率半导体模块的方法，该功率半导体模块特别节省成本并且允许可靠地生成高质量的模块。