SHAPE ACCURACY IMPROVEMENT USING A NOVEL CALIBRATION APPROACH
    1.
    发明申请
    SHAPE ACCURACY IMPROVEMENT USING A NOVEL CALIBRATION APPROACH 审中-公开
    使用新的校准方法形状精度改进

    公开(公告)号:WO0211183B1

    公开(公告)日:2002-07-11

    申请号:PCT/US0123998

    申请日:2001-07-31

    Applicant: ADE CORP

    Abstract: Determining the systematic error of an instrument that measures features of a semiconductor wafer which a symmetric corrector is calculated by taking the average over all measurement signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set (80). A wafer mean is computed by averaging these calibrated wafer shape measurements (82). When the wafer mean is substracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results (84). The average of the aligned residuals is the asymmmetric error (86). The systematic error is the sum of the symmetric and asymmetric errors (90).

    Abstract translation: 确定测量半导体晶片的特征的仪器的系统误差,通过在每个负载角度对所有测量特征进行平均,计算对称校正器。 将对称校正器依次旋转到与正面形状测量相同的角度并减去,得到校准的晶片数据组(80)。 通过平均这些校准的晶片形状测量值(82)来计算晶片平均值。 当晶片平均值从单个前侧校正形状测量值减去时,每个负载角度的一组形状残差图形成(84)。 对齐残差的平均值是非对称误差(86)。 系统误差是对称和非对称误差的总和(90)。

    Improvement in shape accuracy using new calibration method
    3.
    发明专利
    Improvement in shape accuracy using new calibration method 有权
    使用新的校准方法改进形状精度

    公开(公告)号:JP2008145439A

    公开(公告)日:2008-06-26

    申请号:JP2007315697

    申请日:2007-12-06

    Abstract: PROBLEM TO BE SOLVED: To determine the systematic error of an instrument that measures features of a semiconductor wafer. SOLUTION: A method for determining the symmetric error of a measurement instrument that measures features of a semiconductor wafer includes the step of yielding a front data set and a back data set for each angle by collecting sensor data from measurement runs on front and back surfaces of a wafer while the wafer is oriented at different angles to the instrument for each run, yielding an averaged wafer shape for each load angle by subtracting the reflected back data from the front data for each wafer angle and by dividing the result by two, and yielding an instrument signature for each load angle by adding the reflected back data to the front data and by dividing the result by two. The symmetric corrector is calculated by taking the average over all instrument signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set. A wafer mean is computed by averaging these calibrated wafer shape measurements. When the wafer mean is subtracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results. The average of the aligned residuals is the asymmetric error. The systematic error is the sum of the symmetric and asymmetric errors. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:确定测量半导体晶片特征的仪器的系统误差。 解决方案:用于确定测量半导体晶片特征的测量仪器的对称误差的方法包括以下步骤:通过从前面的测量运行收集传感器数据,产生每个角度的前置数据组和反向数据组, 晶片的后表面,同时晶片以与每个运行的仪器不同的角度定向,通过从每个晶片角度的前面数据中减去反射回数据,并将结果除以2,产生每个负载角的平均晶片形状 ,并通过将反射回数据加到前面的数据并将结果除以2,来为每个负载角度产生一个仪器签名。 通过在每个负载角度取所有仪器签名的平均值来计算对称校正器。 将对称校正器依次旋转到与正面形状测量相同的角度并减去,得到校准的晶片数据集。 通过平均这些校准的晶片形状测量来计算晶片平均值。 当从各个正面校正形状测量值中减去晶片平均值时,产生用于每个负载角度的一组形状残差图。 对齐残差的平均值是非对称误差。 系统误差是对称误差和非对称误差之和。 版权所有(C)2008,JPO&INPIT

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