Abstract:
A ring chuck (70) that holds a wafer (8) with a vacuum uses a vacuum trough (80) that contacts the entire outer edge of the wafer (8). The chuck (70) has a base (72) having a top surface (96) equal to or slightly smaller than a wafer (8) to be tested with vacuum channels in the base (72). The base (72) provides the mechanism to connect the chuck to a measurement instrument and a vacuum source. An annulus (74) of non-contaminant material that has a plurality of concentric rings (76) extending upward from its outer edge is fixed to the base top surface (96) with the trough (80) between the concentric rings (76) connected to the vacuum channels (82). The vacuum trough (80) holds the wafer (8) securely to the chuck and minimizes vibrations when the wafer (8) is rotated. When the plurality of concentric rings (76) are contained within the wafer (8) exclusion band, the print through onto the tested are is minimized.
Abstract:
Determining the systematic error of an instrument that measures features of a semiconductor wafer which a symmetric corrector is calculated by taking the average over all measurement signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set (80). A wafer mean is computed by averaging these calibrated wafer shape measurements (82). When the wafer mean is substracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results (84). The average of the aligned residuals is the asymmmetric error (86). The systematic error is the sum of the symmetric and asymmetric errors (90).
Abstract:
A ring chuck (70) that holds a wafer (8) with a vacuum uses a vacuum trough (80) that contacts the entire outer edge of the wafer (8). The chuck (70) has a base (72) having a top surface (96) equal to or slightly smaller than a wafer (8) to be tested with vacuum channels in the base (72). The base (72) provides the mechanism to connect the chuck to a measurement instrument and a vacuum source. An annulus (74) of non-contaminant material that has a plurality of concentric rings (76) extending upward from its outer edge is fixed to the base top surface (96) with the trough (80) between the concentric rings (76) connected to the vacuum channels (82). The vacuum trough (80) holds the wafer (8) securely to the chuck and minimizes vibrations when the wafer (8) is rotated. When the plurality of concentric rings (76) are contained within the wafer (8) exclusion band, the print through onto the tested are is minimized.
Abstract:
PROBLEM TO BE SOLVED: To determine the systematic error of an instrument that measures features of a semiconductor wafer. SOLUTION: A method for determining the symmetric error of a measurement instrument that measures features of a semiconductor wafer includes the step of yielding a front data set and a back data set for each angle by collecting sensor data from measurement runs on front and back surfaces of a wafer while the wafer is oriented at different angles to the instrument for each run, yielding an averaged wafer shape for each load angle by subtracting the reflected back data from the front data for each wafer angle and by dividing the result by two, and yielding an instrument signature for each load angle by adding the reflected back data to the front data and by dividing the result by two. The symmetric corrector is calculated by taking the average over all instrument signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set. A wafer mean is computed by averaging these calibrated wafer shape measurements. When the wafer mean is subtracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results. The average of the aligned residuals is the asymmetric error. The systematic error is the sum of the symmetric and asymmetric errors. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
This method removes high frequency noise from shape data, significantly improves metrology system (10) performance and provides very compact representation of the shape. This model-based method for wafer shape reconstruction from data measured by a dimensional metrology system (10) is best accomplished using the set of Zernike polynomials (matrix L). The method is based on decomposition of the wafer shape over the complete set of the spatial function. A weighted least squares fit is used to provide the best linear estimates of the decomposition coefficients (Bnk). The method is operable with data that is not taken at regular data points and generates a reduced data field of Zernike coefficients compared to the large size of the original data field.