RING CHUCK TO HOLD 200 AND 300 MM WAFER
    2.
    发明申请
    RING CHUCK TO HOLD 200 AND 300 MM WAFER 审中-公开
    戒指保持200和300毫米波形

    公开(公告)号:WO0217354A9

    公开(公告)日:2003-08-28

    申请号:PCT/US0126084

    申请日:2001-08-21

    Applicant: ADE CORP

    CPC classification number: H01L21/6838

    Abstract: A ring chuck (70) that holds a wafer (8) with a vacuum uses a vacuum trough (80) that contacts the entire outer edge of the wafer (8). The chuck (70) has a base (72) having a top surface (96) equal to or slightly smaller than a wafer (8) to be tested with vacuum channels in the base (72). The base (72) provides the mechanism to connect the chuck to a measurement instrument and a vacuum source. An annulus (74) of non-contaminant material that has a plurality of concentric rings (76) extending upward from its outer edge is fixed to the base top surface (96) with the trough (80) between the concentric rings (76) connected to the vacuum channels (82). The vacuum trough (80) holds the wafer (8) securely to the chuck and minimizes vibrations when the wafer (8) is rotated. When the plurality of concentric rings (76) are contained within the wafer (8) exclusion band, the print through onto the tested are is minimized.

    Abstract translation: 用真空保持晶片(8)的环形卡盘(70)使用与晶片(8)的整个外边缘接触的真空槽(80)。 卡盘(70)具有基座(72),其具有等于或略小于要在基座(72)中的真空通道进行测试的晶片(8)的顶表面(96)。 基座(72)提供将卡盘连接到测量仪器和真空源的机构。 具有从其外边缘向上延伸的多个同心环(76)的非污染物质的环(74)被固定到基座顶表面(96)上,在同心环(76)连接的槽(80) 到真空通道(82)。 真空槽(80)将晶片(8)牢固地保持在卡盘上并使晶片(8)旋转时的振动最小化。 当多个同心环(76)被包含在晶片(8)排除带内时,打印到被测试的部分被最小化。

    SHAPE ACCURACY IMPROVEMENT USING A NOVEL CALIBRATION APPROACH
    3.
    发明申请
    SHAPE ACCURACY IMPROVEMENT USING A NOVEL CALIBRATION APPROACH 审中-公开
    使用新的校准方法形状精度改进

    公开(公告)号:WO0211183B1

    公开(公告)日:2002-07-11

    申请号:PCT/US0123998

    申请日:2001-07-31

    Applicant: ADE CORP

    Abstract: Determining the systematic error of an instrument that measures features of a semiconductor wafer which a symmetric corrector is calculated by taking the average over all measurement signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set (80). A wafer mean is computed by averaging these calibrated wafer shape measurements (82). When the wafer mean is substracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results (84). The average of the aligned residuals is the asymmmetric error (86). The systematic error is the sum of the symmetric and asymmetric errors (90).

    Abstract translation: 确定测量半导体晶片的特征的仪器的系统误差,通过在每个负载角度对所有测量特征进行平均,计算对称校正器。 将对称校正器依次旋转到与正面形状测量相同的角度并减去,得到校准的晶片数据组(80)。 通过平均这些校准的晶片形状测量值(82)来计算晶片平均值。 当晶片平均值从单个前侧校正形状测量值减去时,每个负载角度的一组形状残差图形成(84)。 对齐残差的平均值是非对称误差(86)。 系统误差是对称和非对称误差的总和(90)。

    RING CHUCK TO HOLD 200 AND 300 MM WAFER
    4.
    发明申请
    RING CHUCK TO HOLD 200 AND 300 MM WAFER 审中-公开
    戒指保持200和300毫米波形

    公开(公告)号:WO0217354A3

    公开(公告)日:2002-06-06

    申请号:PCT/US0126084

    申请日:2001-08-21

    Applicant: ADE CORP

    CPC classification number: H01L21/6838

    Abstract: A ring chuck (70) that holds a wafer (8) with a vacuum uses a vacuum trough (80) that contacts the entire outer edge of the wafer (8). The chuck (70) has a base (72) having a top surface (96) equal to or slightly smaller than a wafer (8) to be tested with vacuum channels in the base (72). The base (72) provides the mechanism to connect the chuck to a measurement instrument and a vacuum source. An annulus (74) of non-contaminant material that has a plurality of concentric rings (76) extending upward from its outer edge is fixed to the base top surface (96) with the trough (80) between the concentric rings (76) connected to the vacuum channels (82). The vacuum trough (80) holds the wafer (8) securely to the chuck and minimizes vibrations when the wafer (8) is rotated. When the plurality of concentric rings (76) are contained within the wafer (8) exclusion band, the print through onto the tested are is minimized.

    Abstract translation: 用真空保持晶片(8)的环形卡盘(70)使用与晶片(8)的整个外边缘接触的真空槽(80)。 卡盘(70)具有基座(72),其具有等于或略小于要在基座(72)中的真空通道进行测试的晶片(8)的顶表面(96)。 基座(72)提供将卡盘连接到测量仪器和真空源的机构。 具有从其外边缘向上延伸的多个同心环(76)的非污染物质的环形区域(74)被固定到基座顶面(96),同心环(76)连接的槽(80) 到真空通道(82)。 真空槽(80)将晶片(8)牢固地保持在卡盘上并使晶片(8)旋转时的振动最小化。 当多个同心环(76)被包含在晶片(8)排除带内时,打印到被测试的部分被最小化。

    Improvement in shape accuracy using new calibration method
    5.
    发明专利
    Improvement in shape accuracy using new calibration method 有权
    使用新的校准方法改进形状精度

    公开(公告)号:JP2008145439A

    公开(公告)日:2008-06-26

    申请号:JP2007315697

    申请日:2007-12-06

    Abstract: PROBLEM TO BE SOLVED: To determine the systematic error of an instrument that measures features of a semiconductor wafer. SOLUTION: A method for determining the symmetric error of a measurement instrument that measures features of a semiconductor wafer includes the step of yielding a front data set and a back data set for each angle by collecting sensor data from measurement runs on front and back surfaces of a wafer while the wafer is oriented at different angles to the instrument for each run, yielding an averaged wafer shape for each load angle by subtracting the reflected back data from the front data for each wafer angle and by dividing the result by two, and yielding an instrument signature for each load angle by adding the reflected back data to the front data and by dividing the result by two. The symmetric corrector is calculated by taking the average over all instrument signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set. A wafer mean is computed by averaging these calibrated wafer shape measurements. When the wafer mean is subtracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results. The average of the aligned residuals is the asymmetric error. The systematic error is the sum of the symmetric and asymmetric errors. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:确定测量半导体晶片特征的仪器的系统误差。 解决方案:用于确定测量半导体晶片特征的测量仪器的对称误差的方法包括以下步骤:通过从前面的测量运行收集传感器数据,产生每个角度的前置数据组和反向数据组, 晶片的后表面,同时晶片以与每个运行的仪器不同的角度定向,通过从每个晶片角度的前面数据中减去反射回数据,并将结果除以2,产生每个负载角的平均晶片形状 ,并通过将反射回数据加到前面的数据并将结果除以2,来为每个负载角度产生一个仪器签名。 通过在每个负载角度取所有仪器签名的平均值来计算对称校正器。 将对称校正器依次旋转到与正面形状测量相同的角度并减去,得到校准的晶片数据集。 通过平均这些校准的晶片形状测量来计算晶片平均值。 当从各个正面校正形状测量值中减去晶片平均值时,产生用于每个负载角度的一组形状残差图。 对齐残差的平均值是非对称误差。 系统误差是对称误差和非对称误差之和。 版权所有(C)2008,JPO&INPIT

    SPECIMEN TOPOGRAPHY RECONSTRUCTION
    6.
    发明公开
    SPECIMEN TOPOGRAPHY RECONSTRUCTION 有权
    TOPOGRAFISCHE REKONSTRUKTION DER SPEZIMEN

    公开(公告)号:EP1157253A4

    公开(公告)日:2003-03-19

    申请号:EP00986662

    申请日:2000-12-22

    Applicant: ADE CORP

    CPC classification number: H01L22/20 G06T7/66 G06T2207/30148

    Abstract: This method removes high frequency noise from shape data, significantly improves metrology system (10) performance and provides very compact representation of the shape. This model-based method for wafer shape reconstruction from data measured by a dimensional metrology system (10) is best accomplished using the set of Zernike polynomials (matrix L). The method is based on decomposition of the wafer shape over the complete set of the spatial function. A weighted least squares fit is used to provide the best linear estimates of the decomposition coefficients (Bnk). The method is operable with data that is not taken at regular data points and generates a reduced data field of Zernike coefficients compared to the large size of the original data field.

    Abstract translation: 该方法从形状数据中去除高频噪声,显着提高了测量系统(10)性能,并提供了非常紧凑的形状表示。 这种基于模型的基于尺寸计量系统(10)测量的数据的晶圆形状重建方法最好使用Zernike多项式(矩阵L)来完成。 该方法基于在完整的空间函数集上的晶片形状的分解。 加权最小二乘拟合用于提供分解系数(Bnk)的最佳线性估计。 该方法可操作于在常规数据点处未获取的数据,并且与原始数据字段的大尺寸相比生成泽尼克系数的减少的数据字段。

Patent Agency Ranking