Extended defect sizing
    2.
    发明专利
    Extended defect sizing 有权
    扩展缺陷尺寸

    公开(公告)号:JP2005208042A

    公开(公告)日:2005-08-04

    申请号:JP2004308470

    申请日:2004-10-22

    CPC classification number: G01N21/9501

    Abstract: PROBLEM TO BE SOLVED: To provide a system and method of inspecting semiconductor wafers capable of determining the height of a defect on a wafer surface whether or not the scattering power associated with the defect exceeds the dynamic range of the system.
    SOLUTION: In the wafer defect inspection system, when the defect on the wafer surface is detected, the three-dimensional shape of the defect is regarded as a Gaussian shape. A plurality of cross-sectional areas of the Gaussian shape are defined, a respective value of each cross-sectional area is determined, and a respective value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas is determined. The cross-sectional area values are plotted as a function of the natural logarithm of the intermediate height values to form a substantially linear plot, a natural logarithm of the height value corresponding to a zero area value based on the substantially linear plot is determined, and the inverse natural logarithm of the value is determined to obtain the height of the Gaussian shape.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种检查能够确定晶片表面上的缺陷的高度的半导体晶片的系统和方法,无论与缺陷相关联的散射功率是否超过系统的动态范围。 解决方案:在晶片缺陷检查系统中,当检测到晶片表面上的缺陷时,缺陷的三维形状被认为是高斯形状。 定义高斯形状的多个横截面面积,确定每个横截面积的相应值,并且确定与横截面积对应的高斯形状的中间高度的自然对数的相应值 。 将横截面积值绘制为中间高度值的自然对数的函数以形成基本上线性的图,确定基于基本上线性的绘图对应于零面积值的高度值的自然对数,以及 确定该值的反自然对数以获得高斯形状的高度。 版权所有(C)2005,JPO&NCIPI

    3.
    发明专利
    未知

    公开(公告)号:DE102004051842B4

    公开(公告)日:2007-01-04

    申请号:DE102004051842

    申请日:2004-10-25

    Applicant: ADE CORP

    Abstract: A system for inspecting semiconductor wafers capable of determining a scattering power associated with a wafer surface detect whether or not the scattering power exceeds the dynamic range of the system. The scattering power is obtained by determining the height of a Gaussian shape representing data collected by the system. The height is determined by defining a plurality of cross-sectional areas of the Gaussian shape, determining a value of each area, determining a value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas, plotting the area values as function of the natural logarithm of the intermediate height values to form a linear plot, determining a natural logarithm of the height value corresponding to a zero area value based on the linear plot, and determining the inverse natural logarithm of the value to obtain the height of the Gaussian shape.

    4.
    发明专利
    未知

    公开(公告)号:DE102004051842A1

    公开(公告)日:2005-12-08

    申请号:DE102004051842

    申请日:2004-10-25

    Applicant: ADE CORP

    Abstract: A system for inspecting semiconductor wafers capable of determining a scattering power associated with a wafer surface detect whether or not the scattering power exceeds the dynamic range of the system. The scattering power is obtained by determining the height of a Gaussian shape representing data collected by the system. The height is determined by defining a plurality of cross-sectional areas of the Gaussian shape, determining a value of each area, determining a value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas, plotting the area values as function of the natural logarithm of the intermediate height values to form a linear plot, determining a natural logarithm of the height value corresponding to a zero area value based on the linear plot, and determining the inverse natural logarithm of the value to obtain the height of the Gaussian shape.

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