Abstract:
A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable scan speed beam scanning subsystem, preferably using an acousto-optic deflector, with beam compensation, so that variable scanning speeds can be achieved. Also included are methods and systems for improving the signal to noise ratio by use of scatter reducing complements, and a system and method for selectively and repeatedly scanning a region of interest on the surface in order to provide additional observations of the region of interest.
Abstract:
PROBLEM TO BE SOLVED: To provide a system and method of inspecting semiconductor wafers capable of determining the height of a defect on a wafer surface whether or not the scattering power associated with the defect exceeds the dynamic range of the system. SOLUTION: In the wafer defect inspection system, when the defect on the wafer surface is detected, the three-dimensional shape of the defect is regarded as a Gaussian shape. A plurality of cross-sectional areas of the Gaussian shape are defined, a respective value of each cross-sectional area is determined, and a respective value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas is determined. The cross-sectional area values are plotted as a function of the natural logarithm of the intermediate height values to form a substantially linear plot, a natural logarithm of the height value corresponding to a zero area value based on the substantially linear plot is determined, and the inverse natural logarithm of the value is determined to obtain the height of the Gaussian shape. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
A system for inspecting semiconductor wafers capable of determining a scattering power associated with a wafer surface detect whether or not the scattering power exceeds the dynamic range of the system. The scattering power is obtained by determining the height of a Gaussian shape representing data collected by the system. The height is determined by defining a plurality of cross-sectional areas of the Gaussian shape, determining a value of each area, determining a value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas, plotting the area values as function of the natural logarithm of the intermediate height values to form a linear plot, determining a natural logarithm of the height value corresponding to a zero area value based on the linear plot, and determining the inverse natural logarithm of the value to obtain the height of the Gaussian shape.
Abstract:
A system for inspecting semiconductor wafers capable of determining a scattering power associated with a wafer surface detect whether or not the scattering power exceeds the dynamic range of the system. The scattering power is obtained by determining the height of a Gaussian shape representing data collected by the system. The height is determined by defining a plurality of cross-sectional areas of the Gaussian shape, determining a value of each area, determining a value of the natural logarithm of intermediate heights of the Gaussian shape corresponding to the cross-sectional areas, plotting the area values as function of the natural logarithm of the intermediate height values to form a linear plot, determining a natural logarithm of the height value corresponding to a zero area value based on the linear plot, and determining the inverse natural logarithm of the value to obtain the height of the Gaussian shape.