公开(公告)号：DE112005003322B4

公开(公告)日：2016-05-12

申请号：DE112005003322

申请日：2005-12-21

Applicant: ADEKA CORP

Inventor： OGASAWARA KUNIO ,  ONOZAWA KAZUHISA ,  SATO HIROKI ,  HIGASHINO TAKASHI

IPC: C23C16/42 ,  C07F7/21

Abstract: Zusammensetzung, umfassend 100 Gewichtsteile einer Siloxanverbindung mit der Gruppe -HSiRO-, wobei R ein Wasserstoffatom, eine Kohlenwasserstoffgruppe mit 1 bis 8 Kohlenstoffatomen, eine Alkoxygruppe mit 1 bis 8 Kohlenstoffatomen oder eine Phenoxygruppe darstellt, und 0,0001 bis 1 Gewichtsteil von mindestens einer Phenolverbindung als Stabilisator, die durch die nachstehenden allgemeinen Formeln (1) oder (2) dargestellt wird:wobei a und b jeweils eine ganze Zahl von 0 bis 4 darstellen; m 0 oder 1 darstellt; p und q jeweils 1 oder 2 darstellen; R1, R2, R3 und R4 jeweils eine Alkylgruppe mit 1 bis 4 Kohlenstoffatomen darstellen; X1 und X2 jeweils eine Alkylgruppe mit 1 bis 4 Kohlenstoffatomen, eine Alkoxygruppe mit 1 bis 4 Kohlenstoffatomen oder ein Halogenatom darstellen; Y eine Alkandiylgruppe mit 1 bis 4 Kohlenstoffatomen darstellt; und eine Vielzahl der Reste R1, R2, R3, R4, X1, X2 oder Y, wenn sie jeweils im Molekul vorhanden sind, gleich oder verschieden sein konnen.

公开(公告)号：EP1659130A4

公开(公告)日：2008-11-05

申请号：EP04771133

申请日：2004-08-02

Applicant: ADEKA CORP

Inventor： YOSHINAKA ATSUYA ,  SATO HIROKI ,  FUJIMOTO RYUSAKU

IPC: C01B13/20 ,  C07F17/00 ,  C01F17/00 ,  C07F5/00 ,  C23C16/18 ,  C23C16/42 ,  H01L21/316

CPC classification number: C23C16/18 ,  C07F17/00

Abstract: A rare earth metal complex which is a tris-s-butylcyclopentadienyl/rare earth metal complex represented by the following general formula (I). It is a liquid rare earth metal complex excellent in heat resistance and volatility and suitable for use as a material for thin-film formation. (In the formula, M represents a rare earth metal.)

公开(公告)号：SG11201501107XA

公开(公告)日：2015-07-30

申请号：SG11201501107X

申请日：2013-10-15

Applicant: ADEKA CORP

Inventor： SATO HIROKI ,  UEYAMA JUNJI

IPC: C23C16/40 ,  C07F11/00 ,  C07F17/00

公开(公告)号：DE112005000134T5

公开(公告)日：2007-02-15

申请号：DE112005000134

申请日：2005-02-14

Applicant: ADEKA CORP

Inventor： SATO HIROKI ,  SAKURAI ATSUSHI

IPC: C07C215/08 ,  C07F7/00 ,  C07F7/04 ,  C23C16/40 ,  H01L21/316

Abstract: An alkoxide compound of formula (I) suitable as a material for thin film formation used in thin film formation involving vaporization of a material such as CVD, a material for thin film formation including the alkoxide compound, and a process for thin film formation using the material. The process includes vaporizing the material for thin film formation, introducing the resulting vapor containing the alkoxide compound, onto a substrate, and causing the vapor to decompose and/or chemically react to form a thin film on the substrate. wherein one of R1 and R2 represents an alkyl group having 1-4 carbon atoms, the other representing a hydrogen atom or an alkyl group having 1-4 carbon atoms; R3 and R4 each represent an alkyl group having 1-4 carbon atoms; A represents an alkanediyl group having 1-8 carbon atoms; M represents a silicon atom or a hafnium atom; and n represents 4.

公开(公告)号：DE112005003322T5

公开(公告)日：2007-12-06

申请号：DE112005003322

申请日：2005-12-21

Applicant: ADEKA CORP

Inventor： OGASAWARA KUNIO ,  ONOZAWA KAZUHISA ,  SATO HIROKI ,  HIGASHINO TAKASHI

IPC: C23C16/42 ,  C07F7/21

Abstract: A composition containing 100 parts by mass of a siloxane compound having —HSiRO— (wherein R is a hydrogen atom, a hydrocarbon group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms or a phenoxy group) and 0.0001 to 1 part by mass of at least one phenol compound of general formula (1) or (2) as a stabilizer. wherein a and b are each an integer of 0 to 4; m is 0 or 1; p and q are each 1 or 2; R1, R2, R3, and R4 are each an alkyl group having 1 to 4 carbon atoms; X1 and X2 each represent an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogen atom; Y is an alkanediyl group having 1 to 4 carbon atoms; and a plurality of R1s, R2s, R3s, R4s, X1s, X2s or Ys, where present per molecule, may be the same or different.

公开(公告)号：JP2011080108A

公开(公告)日：2011-04-21

申请号：JP2009232079

申请日：2009-10-06

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  MIZUO KATSUHIDE

IPC: C23C16/42 ,  H01L21/31

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/0228

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition which is efficiently convertible into an excellent silicon-containing thin film, and a method for depositing the silicon-containing thin film by a chemical vapor deposition method using the raw material for chemical vapor deposition.
SOLUTION: The raw material for chemical vapor deposition contains tri-isocyanate silane (HSi(NCO)
3 ). The raw material for chemical vapor deposition is suitable for a raw material for depositing a silicon-containing thin film, preferably, a silicon oxide- containing thin film by the chemical vapor deposition method, in particular, an ALD (Atomic Layer Deposition) method on a substrate.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供可有效转化为优异的含硅薄膜的化学气相沉积原料，以及通过使用原料的化学气相沉积法沉积含硅薄膜的方法 化学气相沉积材料

解决方案：用于化学气相沉积的原料含有三异氰酸酯硅烷（HSi（NCO）SB 3）。 用于化学气相沉积的原料适用于通过化学气相沉积方法沉积含硅薄膜，优选含氧化硅的薄膜的原料，特别是ALD（原子层沉积）方法 底物。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010275602A

公开(公告)日：2010-12-09

申请号：JP2009130323

申请日：2009-05-29

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  SAITO AKIO

IPC: C23C16/42 ,  C07F7/10 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition which allows a film to be deposited at a low temperature of 300-500°C and which contains an organic silicon-containing compound providing a process having good reactivity. SOLUTION: The raw material for chemical vapor deposition includes an organic silicon-containing compound, represented by formula: HSi(CH 3 )(R 1 )(NR 2 R 3 ) (wherein, R 1 represents NR 4 R 5 or a 1C-5C alkyl group; R 2 and R 4 each represent a 1C-5C alkyl group or hydrogen atom; and R 3 and R 5 each represent a 1C-5C alkyl group). COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种化学气相沉积原料，其允许膜在300-500℃的低温下沉积并且含有提供具有良好反应性的方法的有机含硅化合物。 解决方案：用于化学气相沉积的原料包括由下式表示的有机含硅化合物：HSi（CH 3 ）（R 1 ）（NR < SP> 2 R 3 ）（其中，R 1 表示NR 4 1C-5C烷基; R SP＆gt; 2＆lt; SP＆gt;和＆lt; SP＆gt; 4＆lt; SP＆gt;各自表示1C-5C烷基或氢原子; R 3， SP> 5 各自表示1C-5C烷基）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006339506A

公开(公告)日：2006-12-14

申请号：JP2005164143

申请日：2005-06-03

Applicant: Adeka Corp ,  Semiconductor Process Laboratory Co Ltd ,  株式会社Adeka ,  株式会社半導体プロセス研究所

Inventor： SHIOTANI YOSHIMI ,  MAEDA KAZUO ,  ONOZAWA KAZUHISA ,  SATO HIROKI

IPC: H01L21/316 ,  C23C16/42 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a method which forms an insulating film of a low dielectric constant having a dielectric constant lower than 2.7, and a barrier insulating film having a dielectric constant lower than 4 using a chemical vapor deposition method.
SOLUTION: The plasma of a film forming gas containing a first silicon containing organic compound which has a cyclic structure more than five-ring silicon atoms, and has a siloxane coupling of a silicon atom; and a second silicon containing organic compound which has a cyclic structure lower than four-ring silicon atoms or a chain structure lower than 4 silicon atoms, and has a siloxane coupling of a silicon atom, is produced and reacted to form an insulating film 32 on a substrate 31.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用化学气相沉积法形成介电常数低于2.7的低介电常数的绝缘膜和介电常数低于4的阻挡绝缘膜的方法。 解决方案：含有具有多于五环硅原子的环状结构并具有硅原子的硅氧烷偶合的含有机硅化合物的成膜气体的等离子体; 并且产生具有低于四环硅原子或低于4个硅原子的链状结构且具有硅原子的硅氧烷偶合的环状结构的第二硅含量有机化合物，并反应以形成绝缘膜32 底物31.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012246531A

公开(公告)日：2012-12-13

申请号：JP2011118760

申请日：2011-05-27

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  KAMIYAMA JUNJI

IPC: C23C16/40 ,  C07C211/03 ,  C07F11/00 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28194 ,  C07F11/005 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y02E10/541 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a molybdenum oxide-containing thin film by a CVD process, in which excellent transportation performance for a precursor is achieved, the supply amount of the precursor to a substrate is easily controlled, the precursor can be stably supplied, and a high-quality molybdenum oxide-containing thin film can be manufactured with good mass-productivity.SOLUTION: The method for manufacturing a molybdenum oxide-containing thin film comprises: introducing vapor containing a molybdenum amide compound obtained by vaporizing a starting material for forming a thin film containing a compound expressed by general formula (I), onto a substrate; and further introducing oxidative gas to induce decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, Rand Rare each 1-4C straight-chain or branched alkyl; Ris t-butyl or t-amyl; y is 0 or 2; x is 4 when y is 0, and x is 2 when y is 2; and a plurality of Rand Rmay be respectively the same or different.

Abstract translation: 待解决的问题：为了提供一种通过CVD工艺制造含氧化钼的薄膜的方法，其中实现了前体的优异的输送性能，容易控制对基材的前体的供给量， 可以稳定地供给前体，能够以良好的质量生产率制造出优质的含氧化钼的薄膜。 解决方案：含有氧化钼的薄膜的制造方法包括：将含有通过将含有通式（I）表示的化合物的薄膜的原料蒸发的蒸镀原料得到的含有钼酰胺化合物的蒸气导入基板 ; 并进一步引入氧化气体以诱导分解和/或化学反应，以在基材上形成薄膜。 在该式中，R 1 和R 2 分别为1-4C直链或支链烷基; 叔丁基或叔戊基; R 3是叔丁基或叔戊基; y为0或2; 当y为0时x为4，y为2时x为2; 并且多个R 1 和R 2 可以分别相同或不同。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2006316316A

公开(公告)日：2006-11-24

申请号：JP2005139758

申请日：2005-05-12

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  SATO HIROKI

IPC: C23C16/42 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a productive process suitable for producing a silicon-oxide-based thin film of high quality. SOLUTION: The production method comprises the steps of: preparing a vapor containing tris (ethyl methyl amino) silane obtained by evaporating a raw material containing tris (ethyl methyl amino) silane for forming the thin film; introducing the vapor onto a substrate in a system to form a thin layer containing silicon on the substrate; then discharging a gas remaining in a system; introducing an oxidative gas into the system; and exerting the oxidative gas and heat on the thin layer containing silicon to form the silicon-oxide-based thin film from the previously formed thin film containing silicon. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适合于生产高质量的氧化硅基薄膜的生产方法。 解决方案：制备方法包括以下步骤：制备含有三（乙基甲基氨基）硅烷的蒸气，该三（乙基甲基氨基）硅烷通过蒸发含有三（乙基甲基氨基）硅烷的原料而形成薄膜; 将蒸气引入系统中的衬底上以在衬底上形成含有硅的薄层; 然后排出剩余在系统中的气体; 将氧化气体引入系统; 并在含有硅的薄层上施加氧化气体和热量，从先前形成的含硅薄膜形成基于氧化硅的薄膜。 版权所有（C）2007，JPO＆INPIT