公开(公告)号：DE112005000134T5

公开(公告)日：2007-02-15

申请号：DE112005000134

申请日：2005-02-14

Applicant: ADEKA CORP

Inventor： SATO HIROKI ,  SAKURAI ATSUSHI

IPC: C07C215/08 ,  C07F7/00 ,  C07F7/04 ,  C23C16/40 ,  H01L21/316

Abstract: An alkoxide compound of formula (I) suitable as a material for thin film formation used in thin film formation involving vaporization of a material such as CVD, a material for thin film formation including the alkoxide compound, and a process for thin film formation using the material. The process includes vaporizing the material for thin film formation, introducing the resulting vapor containing the alkoxide compound, onto a substrate, and causing the vapor to decompose and/or chemically react to form a thin film on the substrate. wherein one of R1 and R2 represents an alkyl group having 1-4 carbon atoms, the other representing a hydrogen atom or an alkyl group having 1-4 carbon atoms; R3 and R4 each represent an alkyl group having 1-4 carbon atoms; A represents an alkanediyl group having 1-8 carbon atoms; M represents a silicon atom or a hafnium atom; and n represents 4.

公开(公告)号：DE102007042943A1

公开(公告)日：2008-03-27

申请号：DE102007042943

申请日：2007-09-10

Applicant: ADEKA CORP

Inventor： WADA SENJI ,  ABE TETSUJI ,  SAKURAI ATSUSHI ,  HIGASHINO TAKASHI ,  FUJIMOTO RYUSAKU ,  SHIMIZU MASAKO

IPC: C07F7/00 ,  C07F5/00 ,  C23C16/40

Abstract: Titanium, zirconium and hafnium alkenoxides (I) are new. Metal alkenoxides of formula (I) are new. M(OR) 4 (I) R : 2-propen-1-yl, 1-methyl-2-propen-1-yl or 1,1-dimethyl-2-propen-1-yl. Independent claims are also included for: (1) material (M1) for forming a thin film, comprising a compound (I); (2) producing a thin film by vaporizing M1 over a substrate to form a (I)-containing vapor and forming a thin film on the substrate by decomposing (I) or subjecting (I) to a chemical reaction; (3) producing a thin film by vaporizing M1 over a substrate to form a (I)-containing vapor and forming a thin metal oxide film on the substrate by decomposing (I) or subjecting (I) to a chemical reaction in the presence of a reactive gas containing oxygen or ozone; (4) thin film produced as above.

公开(公告)号：EP3144313A4

公开(公告)日：2017-12-06

申请号：EP15792769

申请日：2015-03-31

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F15/06 ,  C23C16/18 ,  C23C16/44

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

公开(公告)号：EP3178808A4

公开(公告)日：2018-03-21

申请号：EP15829762

申请日：2015-07-16

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/0818 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I) :

公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：EP1698614A4

公开(公告)日：2006-12-06

申请号：EP04820870

申请日：2004-11-09

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  YAMADA NAOKI

IPC: C07F7/00 ,  C23C16/18 ,  C23C16/40

CPC classification number: C23C16/409 ,  C07F7/006 ,  C23C16/18

Abstract: A metal compound represented by the following general formula (I): [wherein R , R , R , and R each represent an alkyl group having one to four carbon atoms, A represents an alkanediyl group having one to eight carbon atoms, M represents a lead atom, a titanium atom or a zirconium atom, and n represents 2 when M is a lead atom and represents 4 when M is a titanium or zirconium atom]. The above metal compound has a low melting point and thus can be transported in a liquid state, has a high vapor pressure and thus is easy to vaporize, and is free from the change in its quality due to the exchange of ligands or a chemical reaction also when mixed with another metal compound, and thus it is suitable as a material for use in a method for preparing a thin film, such as the CVD method forming a thin film through the vaporization of a metal compound.

Abstract translation: 由以下通式（I）表示的金属化合物：[其中R 1，R 2，R 3和R 4各自表示具有1至4个碳原子的烷基，A表示 具有1-8个碳原子的链烷二基，M表示铅原子，钛原子或锆原子，并且当M是铅原子时，n表示2，当M是钛或锆原子时，表示4。 上述金属化合物具有低熔点，因此可以以液态输送，具有高蒸气压并且因此容易蒸发，并且由于配体交换或化学反应而没有质量变化 在与其他金属化合物混合时也是合适的，因此适合作为用于制备薄膜的方法的材料，例如通过金属化合物的气化形成薄膜的CVD法。

公开(公告)号：EP3144293A4

公开(公告)日：2018-01-03

申请号：EP15793276

申请日：2015-04-08

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  NISHIDA AKIHIRO ,  OKABE MAKOTO

IPC: C07C215/08 ,  C07F1/08 ,  C23C16/18 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：EP3135664A4

公开(公告)日：2017-11-01

申请号：EP15782391

申请日：2015-03-30

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

公开(公告)号：EP2940025A4

公开(公告)日：2016-09-14

申请号：EP13869190

申请日：2013-11-26

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

公开(公告)号：JP2007320831A

公开(公告)日：2007-12-13

申请号：JP2006155406

申请日：2006-06-02

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： FUJIMOTO RIYUUSAKU ,  SAKURAI ATSUSHI ,  TONO TAKASHI

IPC: C01G27/02 ,  C07F7/00 ,  C23C16/18 ,  C23C16/40 ,  H01L21/316 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for depositing a thin film, which is a precursor which is used for supplying hafnium to the thin film and to which the properties coincident with those of a CVD raw material are imparted.
SOLUTION: The raw material for depositing the thin film contains a new hafnium compound shown by general formula (1) (wherein R
1 is a methyl group; R
2 is a group selected from a methyl group, an ethyl group and an isopropyl group; and n is 1). In the formula, R
1 is a 1-3C alkyl group and can be the same or different; R
2 is a 1-4C alkyl group and can be the same or different; and n is a numeral of 1-5.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于沉积薄膜的原料，该薄膜是用于向薄膜供应铪的前体，并且赋予与CVD原料的性质一致的特性。 解决方案：用于沉积薄膜的原材料含有通式（1）所示的新的铪化合物（其中R 1 是甲基; R 2 SP / 是选自甲基，乙基和异丙基的基团，n为1）。 在该式中，R 1是一个1-3C的烷基，可以相同或不同; R 2是1-4C烷基，可以相同或不同; n为1-5的数字。 版权所有（C）2008，JPO＆INPIT