公开(公告)号：WO2007064334A1

公开(公告)日：2007-06-07

申请号：PCT/US2005/043788

申请日：2005-12-02

Applicant: ADVANCED MICRO DEVICES, INC. ,  BILL, Colin, S. ,  VANBUSKIRK, Michael, A. ,  LAN, Zhida ,  ENNALS, John, S. ,  FANG, Tzu-Ning

Inventor： BILL, Colin, S. ,  VANBUSKIRK, Michael, A. ,  LAN, Zhida ,  ENNALS, John, S. ,  FANG, Tzu-Ning

IPC: H01L51/05 ,  H01L29/786

CPC classification number: H01L51/0512 ,  H01L51/0508

Abstract: Disclosed is a semiconductor transistor device (100) with an annular gate (118) surrounding, at least in part, a channel (110) that conducts current between a first (104) and second (114) source/drain. Also disclosed is a semiconductor transistor device (100) having an annular gate (118) and containing a channel (110) composed of a polymer material. Yet also disclosed is the fabrication of a device utilizing a polymer channel (110) surrounded, at least in part, by an annular gate (118). Further disclosed is a system with a means to control (and/or amplify) current via an annular gate (118) surrounding a channel (110) which conducts current between a first (104) and second (114) source/drain.

Abstract translation: 公开了具有环形栅极（118）的半导体晶体管器件（100），该环形栅极至少部分地围绕在第一（104）和第二（114）源极/漏极之间传导电流的沟道（110）。 还公开了具有环形栅极（118）并且包含由聚合物材料构成的沟道（110）的半导体晶体管器件（100）。 还公开了使用至少部分由环形栅极（118）包围的聚合物通道（110）的装置的制造。 还公开了一种具有通过围绕在第一（104）和第二（114）源极/漏极之间传导电流的沟道（110）的环形栅极（118）来控制（和/或扩大）电流的装置的系统。

公开(公告)号：WO2006036622A1

公开(公告)日：2006-04-06

申请号：PCT/US2005/033379

申请日：2005-09-19

Applicant: ADVANCED MICRO DEVICES, INC. ,  FANG, Tzu-Ning ,  VANBUSKIRK, Michael, A. ,  BILL, Colin, S.

Inventor： FANG, Tzu-Ning ,  VANBUSKIRK, Michael, A. ,  BILL, Colin, S.

IPC: G11C16/02 ,  G11C16/06

CPC classification number: G11C11/5664 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0071 ,  G11C2013/0078 ,  G11C2213/15 ,  G11C2213/79

Abstract: Systems and methods employing at least one constant current source (114, 404) to facilitate programming of an organic memory cell (102, 302, 402, 904, 1102, 1206) and/or employing at least one constant voltage source (112, 304) to facilitate erasing of a memory device (200, 300, 400, 900, 1100). The present invention is utilized in single memory cell devices and memory cell arrays (100). Employing a constant current source (114, 404) prevents current spikes during programming and allows accurate control of a memory cell's (102, 302, 402, 904, 1102, 1206) state during write cycles, independent of the cell's resistance. Employing a constant voltage source (112, 304) provides a stable load for memory cells (102, 302, 402, 904, 1102, 1206) during erase cycles and allows for accurate voltage control across the memory cell (102, 302, 402, 904, 1102, 1206) despite large dynamic changes in cell resistance during the process.

Abstract translation: 使用至少一个恒流源（114,404）的系统和方法来促进对有机存储器单元（102,302,402,904,1102,1206）的编程

公开(公告)号：WO2004042738A1

公开(公告)日：2004-05-21

申请号：PCT/US2003/021680

申请日：2003-07-10

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： VANBUSKIRK, Michael, A. ,  FANG, Tzu-Ning ,  BILL, Colin, S. ,  LAN, Zhida

IPC: G11C16/02

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77

Abstract: The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices without the need for transistor-type voltage controls. The diodic effect (114, 508, 510, 900, 1014, 1114, 1214, 1502, 1702, 1812) of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.

Abstract translation: 本发明通过辅助单个器件改变半导体阵列（100,200,212,300,400）中的状态的方式来有助于半导体器件。 可以将状态变化电压施加到半导体器件的阵列（100,200,212,300,400）中的单个器件，而不需要晶体管型电压控制。 本发明的二体效应（114,508,510,910,1014,1114,1214,1502,1702,1812）通过允许状态改变所需的特定电压水平仅发生在期望的装置来促进这种活动。 以这种方式，可以在不利用晶体管技术的情况下用不同的数据或状态对器件阵列进行编程。 本发明还允许制造这些类型的器件的非常有效的方法，消除了制造昂贵的外部电压控制半导体器件的需要。

公开(公告)号：EP1559110A1

公开(公告)日：2005-08-03

申请号：EP03810746.2

申请日：2003-07-10

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： VANBUSKIRK, Michael, A. ,  FANG, Tzu-Ning ,  BILL, Colin, S. ,  LAN, Zhida

IPC: G11C16/02 ,  G11C13/02

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77

Abstract: The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices without the need for transistor-type voltage controls. The diodic effect (114, 508, 510, 900, 1014, 1114, 1214, 1502, 1702, 1812) of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.