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    ERASING AND PROGRAMMING AN ORGANIC MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING
    1.
    发明申请
    ERASING AND PROGRAMMING AN ORGANIC MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING 审中-公开
    擦除和编程有机存储器件及其操作和制作方法

    公开(公告)号：WO2004102579A1

    公开(公告)日：2004-11-25

    申请号：PCT/US2004/011811

    申请日：2004-04-16

    Applicant: ADVANCED MICRO DEVICES, INC. ,  LAN, Zhida ,  BILL, Colin, S. ,  VANBUSKIRK, Michael, A.

    Inventor： LAN, Zhida ,  BILL, Colin, S. ,  VANBUSKIRK, Michael, A.

    IPC: G11C13/02

    CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0016 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/71

    Abstract: An organic memory cell (100, 1300, 1500) made of two electrodes (104, 110, 1304, 1306, 1502, 1504) with a selectively conductive media (106/108, 1308) between the two electrodes (104, 110, 1304, 1306, 1502, 1504) is disclosed. The selectively conductive media (106/108, 1308) contains an organic layer (108, 300, 400, 500) and passive layer (106, 200). The selectively conductive media (106/108, 1308) is programmed by applying bias voltages that program a desired impedance state (1301, 1302, 1303) for a memory cell (100, 1300, 1500). The desired impedance state (1301, 1302, 1303) represents one or more bits of information and the memory cell (100, 1300, 1500) does not require constant power or refresh cycles to maintain the desired impedance state. Furthermore, the selectively conductive media (106/108, 1308) is read by applying a current and reading the impedance of the media (106/108, 1308) in order to determine the impedance state (1301, 1302, 1303) of the memory cell (100, 1300, 1500). Methods of making the organic memory devices/cells (100, 1300, 1500), methods of using the organic memory devices/cells (100, 1300, 1500), and devices such as computers containing the organic memory devices/cells (100, 1300, 1500) are also disclosed.

    Abstract translation: 由两个电极（104,110,1304,1306,1502,1504）制成的有机存储单元（100,1300,1500）在两个电极（104,110,1304）之间具有选择性导电介质（106/108,1308） ，1306,1502,1504）。 选择性导电介质（106/108,1308）包含有机层（108,300,400,500）和无源层（106,200）。 选择性导电介质（106/108,1308）通过施加用于存储单元（100,1300,1500）编程期望的阻抗状态（1301,1301,1303）的偏压来编程。 期望的阻抗状态（1301,1301,1303）表示一个或多个信息位，并且存储单元（100,1300,1500）不需要恒定的功率或刷新周期来保持所需的阻抗状态。 此外，通过施加电流并读取介质（106/108,1308）的阻抗来读取选择性导电介质（106/108,1308），以便确定存储器的阻抗状态（1301,1301,1303） 细胞（100,1300,1500）。 制造有机存储器件/单元（100,1300,1500）的方法，使用有机存储器件/单元（100,1300,1500）的方法以及诸如包含有机存储器件/单元（100,1300）的计算机 ，1500）也被公开。

    POLYMER-BASED TRANSISTOR DEVICES, METHODS, AND SYSTEMS
    2.
    发明申请
    POLYMER-BASED TRANSISTOR DEVICES, METHODS, AND SYSTEMS 审中-公开
    基于聚合物的晶体管器件，方法和系统

    公开(公告)号：WO2007064334A1

    公开(公告)日：2007-06-07

    申请号：PCT/US2005/043788

    申请日：2005-12-02

    Applicant: ADVANCED MICRO DEVICES, INC. ,  BILL, Colin, S. ,  VANBUSKIRK, Michael, A. ,  LAN, Zhida ,  ENNALS, John, S. ,  FANG, Tzu-Ning

    Inventor： BILL, Colin, S. ,  VANBUSKIRK, Michael, A. ,  LAN, Zhida ,  ENNALS, John, S. ,  FANG, Tzu-Ning

    IPC: H01L51/05 ,  H01L29/786

    CPC classification number: H01L51/0512 ,  H01L51/0508

    Abstract: Disclosed is a semiconductor transistor device (100) with an annular gate (118) surrounding, at least in part, a channel (110) that conducts current between a first (104) and second (114) source/drain. Also disclosed is a semiconductor transistor device (100) having an annular gate (118) and containing a channel (110) composed of a polymer material. Yet also disclosed is the fabrication of a device utilizing a polymer channel (110) surrounded, at least in part, by an annular gate (118). Further disclosed is a system with a means to control (and/or amplify) current via an annular gate (118) surrounding a channel (110) which conducts current between a first (104) and second (114) source/drain.

    Abstract translation: 公开了具有环形栅极（118）的半导体晶体管器件（100），该环形栅极至少部分地围绕在第一（104）和第二（114）源极/漏极之间传导电流的沟道（110）。 还公开了具有环形栅极（118）并且包含由聚合物材料构成的沟道（110）的半导体晶体管器件（100）。 还公开了使用至少部分由环形栅极（118）包围的聚合物通道（110）的装置的制造。 还公开了一种具有通过围绕在第一（104）和第二（114）源极/漏极之间传导电流的沟道（110）的环形栅极（118）来控制（和/或扩大）电流的装置的系统。

    CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES
    4.
    发明申请
    CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES 审中-公开
    使用ZENER二极管器件控制存储器阵列

    公开(公告)号：WO2004042738A1

    公开(公告)日：2004-05-21

    申请号：PCT/US2003/021680

    申请日：2003-07-10

    Applicant: ADVANCED MICRO DEVICES, INC.

    Inventor： VANBUSKIRK, Michael, A. ,  FANG, Tzu-Ning ,  BILL, Colin, S. ,  LAN, Zhida

    IPC: G11C16/02

    CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77

    Abstract: The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices without the need for transistor-type voltage controls. The diodic effect (114, 508, 510, 900, 1014, 1114, 1214, 1502, 1702, 1812) of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.

    Abstract translation: 本发明通过辅助单个器件改变半导体阵列（100,200,212,300,400）中的状态的方式来有助于半导体器件。 可以将状态变化电压施加到半导体器件的阵列（100,200,212,300,400）中的单个器件，而不需要晶体管型电压控制。 本发明的二体效应（114,508,510,910,1014,1114,1214,1502,1702,1812）通过允许状态改变所需的特定电压水平仅发生在期望的装置来促进这种活动。 以这种方式，可以在不利用晶体管技术的情况下用不同的数据或状态对器件阵列进行编程。 本发明还允许制造这些类型的器件的非常有效的方法，消除了制造昂贵的外部电压控制半导体器件的需要。

    CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES
    6.
    发明公开
    CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES 有权
    控制存储器阵列使用ZENERDIODENARTIGEN组件

    公开(公告)号：EP1559110A1

    公开(公告)日：2005-08-03

    申请号：EP03810746.2

    申请日：2003-07-10

    Applicant: ADVANCED MICRO DEVICES INC.

    Inventor： VANBUSKIRK, Michael, A. ,  FANG, Tzu-Ning ,  BILL, Colin, S. ,  LAN, Zhida

    IPC: G11C16/02 ,  G11C13/02

    CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77

    Abstract: The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices without the need for transistor-type voltage controls. The diodic effect (114, 508, 510, 900, 1014, 1114, 1214, 1502, 1702, 1812) of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.

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