公开(公告)号：WO1998009318A1

公开(公告)日：1998-03-05

申请号：PCT/US1997005133

申请日：1997-03-28

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  PRAMANICK, Shekhar ,  SINGH, Bhanwar ,  NG, Che-Hoo

IPC: H01L21/027

CPC classification number: H01L21/76886 ,  H01L21/0276 ,  H01L21/76888 ,  Y10S438/952

Abstract: The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface (21A) of the conductive layer (21) to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface (21A) of an aluminum or an aluminum-alloy conductive layer (21) to render the upper portion (21A) substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.

Abstract translation: 通过改变导电层（21）的上表面（21A）的一部分以显示抗反射性能，避免了在光刻处理期间在导电层上施加不同的抗反射涂层。 在本发明的一个实施例中，杂质离子注入到铝或铝合金导电层（21）的上表面（21A）的一部分中，以使上部（21A）基本上是无定形的，因此减小 其反射性可以进行抗反射功能。

公开(公告)号：WO2003012844A1

公开(公告)日：2003-02-13

申请号：PCT/US2002/010827

申请日：2002-04-05

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： BUYNOSKI, Matthew, Stephen ,  NG, Che-Hoo

IPC: H01L21/265

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

Abstract: A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe 2 + into a bulk silicon or SOI substrate to effect preamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.

Abstract translation: 在形成源极/漏极延伸部（21）和源极/漏极区域（41）之前，通过离子注入Xe 15使SOI衬底（101）变形，从而实际上消除或显着减少浮体效应。 其他方面包括将Xe2 +离子注入到体硅或SOI衬底中以在形成源极/漏极延伸部之前进行预变质，并且具有具有减小的垂直和横向分裂的浅结的区域。

公开(公告)号：EP1419521A1

公开(公告)日：2004-05-19

申请号：EP02736550.1

申请日：2002-04-05

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： BUYNOSKI, Matthew, Stephen ,  NG, Che-Hoo

IPC: H01L21/265

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

Abstract: A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe2+ into a bulk silicon or SOI substrate to effect preamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.

Abstract translation: SOI衬底（101）在形成源极/漏极延伸区（21）和源极/漏极区（41）之前通过离子注入Xe 15预变形，由此实质上消除或显着减小浮体效应。 其他方面包括将Xe2 +离子注入到体硅或SOI衬底中以在形成具有减少的垂直和横向散乱的浅结的源极/漏极延伸区和区域之前实现预先非晶化。

公开(公告)号：EP1511071A2

公开(公告)日：2005-03-02

申请号：EP04078020.7

申请日：2002-04-05

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： Buynoski, Matthew, Stephen ,  NG, Che-Hoo

IPC: H01L21/265 ,  H01L21/336

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

Abstract: A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe 2 + into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.

Abstract translation: 在形成源极/漏极延伸部（21）和源极/漏极区域（41）之前，通过离子注入Xe 15使SOI衬底（101）变形，从而实际上消除或显着减少浮体效应。 其他方面包括将Xe 2 +离子注入到体硅或SOI衬底中，以在形成源极/漏极延伸部分之前实现预变形，并且具有具有减小的垂直和横向倾斜的浅结的区域。

公开(公告)号：EP1012878A1

公开(公告)日：2000-06-28

申请号：EP98944517.6

申请日：1998-08-25

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： MEHTA, Sunil, D. ,  NG, Che-Hoo

IPC: H01L21/3115 ,  H01L21/318

CPC classification number: H01L21/76832 ,  H01L21/31155 ,  H01L21/3221 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66825

Abstract: A semiconductor device formed in a semiconductor substrate with a low hydrogen content barrier layer formed over the semiconductor device. The barrier layer is implanted with phosphorus ions. The semiconductor device may have a hydrogen getter layer formed under the barrier layer. The barrier layer is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer is P-doped film having a thickness between 1000 and 2000 Angstroms and is a PSG, BPSG, PTEOS deposited oxide film, or BPTEOS deposited oxide film. Interconnects are made by a tungsten damascene process.

公开(公告)号：EP0932912A1

公开(公告)日：1999-08-04

申请号：EP97916256.0

申请日：1997-03-28

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： PRAMANICK, Shekhar ,  SINGH, Bhanwar ,  NG, Che-Hoo

IPC: H01L21

CPC classification number: H01L21/76886 ,  H01L21/0276 ,  H01L21/76888 ,  Y10S438/952

Abstract: The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface (21A) of the conductive layer (21) to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface (21A) of an aluminum or an aluminum-alloy conductive layer (21) to render the upper portion (21A) substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.

公开(公告)号：EP1511071A3

公开(公告)日：2009-01-14

申请号：EP04078020.7

申请日：2002-04-05

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Buynoski, Matthew, Stephen ,  NG, Che-Hoo

IPC: H01L21/265 ,  H01L21/336

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

Abstract: A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe 2 + into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.

公开(公告)号：EP1419521B1

公开(公告)日：2007-09-26

申请号：EP02736550.1

申请日：2002-04-05

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： BUYNOSKI, Matthew, Stephen ,  NG, Che-Hoo

IPC: H01L21/265 ,  H01L21/336 ,  H01L21/324

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

Abstract: A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe2+ into a bulk silicon or SOI substrate to effect preamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.

公开(公告)号：EP1012878B1

公开(公告)日：2004-07-28

申请号：EP98944517.6

申请日：1998-08-25

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： MEHTA, Sunil, D. ,  NG, Che-Hoo

IPC: H01L21/3115 ,  H01L21/318

CPC classification number: H01L21/76832 ,  H01L21/31155 ,  H01L21/3221 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66825

Abstract: A semiconductor device formed in a semiconductor substrate with a low hydrogen content barrier layer formed over the semiconductor device. The barrier layer is implanted with phosphorus ions. The semiconductor device may have a hydrogen getter layer formed under the barrier layer. The barrier layer is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer is P-doped film having a thickness between 1000 and 2000 Angstroms and is a PSG, BPSG, PTEOS deposited oxide film, or BPTEOS deposited oxide film. Interconnects are made by a tungsten damascene process.

公开(公告)号：EP0932912B1

公开(公告)日：2003-09-17

申请号：EP97916256.7

申请日：1997-03-28

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： PRAMANICK, Shekhar ,  SINGH, Bhanwar ,  NG, Che-Hoo

IPC: H01L21/027 ,  H01L21/768

CPC classification number: H01L21/76886 ,  H01L21/0276 ,  H01L21/76888 ,  Y10S438/952

Abstract: The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface (21A) of the conductive layer (21) to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface (21A) of an aluminum or an aluminum-alloy conductive layer (21) to render the upper portion (21A) substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.