公开(公告)号：WO2012005957A2

公开(公告)日：2012-01-12

申请号：PCT/US2011041545

申请日：2011-06-23

Applicant: ADVANCED TECH MATERIALS ,  CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

Inventor： CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

IPC: H01L21/314 ,  H01L21/205 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t- AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa 2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb 3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; 的Ti（NMeEt）4; 的Ti（NET2）4; 四氯化钛; tBuN =铌（NET2）3; tBuN =铌（NME2）3; 叔BUN =铌（NEtMe）3; t-AmN = Nb（NEt2）3; 叔AMN =铌（NEtMe）3; 叔AMN =铌（NME2）3; 叔AMN =铌（OBU-T）3; NB-13; 铌（NET2）4; 铌（NET2）5; 铌（N（CH3）2）5; 的Nb（OC2H5）5; 铌（THD）（OPR-i）的4; 的SiH（OME）3; 的SiCl 4; 的Si（NME2）4; （Me3Si）2 NH; GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（R b 3Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

公开(公告)号：WO2009135102A3

公开(公告)日：2010-02-18

申请号：PCT/US2009042480

申请日：2009-05-01

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL ,  CISSELL JULIE ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

Inventor： COOPER EMANUEL ,  CISSELL JULIE ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

IPC: G03F7/42

CPC classification number: G03F7/423 ,  H01L21/31133

Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

Abstract translation: 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地除去硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。

公开(公告)号：EP2288965A4

公开(公告)日：2011-08-10

申请号：EP09739904

申请日：2009-05-01

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL ,  CISSELL JULIE ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

IPC: G03F7/42 ,  H01L21/311

CPC classification number: G03F7/423 ,  H01L21/31133