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公开(公告)号：WO2009026324A3
公开(公告)日：2009-05-14
申请号：PCT/US2008073650
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS , ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
IPC: C11D7/08 , C01B32/50 , C11D7/26 , H01L21/027
CPC classification number: G03F7/423 , H01L21/31133
Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
Abstract translation: 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和含有无机酸的组合物。 含无机酸的组合物包括至少一种无机酸，至少一种含硫氧化剂和任选的至少一种含金属离子的催化剂。 含有无机酸的组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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公开(公告)号：WO2009135102A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042480
申请日：2009-05-01
Applicant: ADVANCED TECH MATERIALS , COOPER EMANUEL , CISSELL JULIE , ZHOU RENJIE , KORZENSKI MICHAEL B
Inventor： COOPER EMANUEL , CISSELL JULIE , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: G03F7/42
CPC classification number: G03F7/423 , H01L21/31133
Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
Abstract translation: 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和低pH组合物。 低pH组合物包括至少一种无机酸和至少一种氧化剂。 低pH组合物有效地除去硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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公开(公告)号：WO2008157345A2
公开(公告)日：2008-12-24
申请号：PCT/US2008066906
申请日：2008-06-13
Applicant: ADVANCED TECH MATERIALS , VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
Inventor： VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
CPC classification number: C11D11/0047 , C09K13/08 , C11D3/3947 , C11D3/3956 , C11D7/08 , C11D7/3209 , C11D7/3218 , C11D7/3281 , H01L21/02079 , H01L21/31111
Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition preferably includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. Processes include the monitoring and modifying said compositions.
Abstract translation: 去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物优选包含氢氟酸。 组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。 方法包括监测和修饰所述组合物。
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Patent Agency Ranking4.发明申请METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开与金属相容的光致抗蚀剂和/或牺牲型抗反射涂层去除组合物
公开(公告)号：WO2007047365A2
公开(公告)日：2007-04-26
申请号：PCT/US2006039888
申请日：2006-10-12
Applicant: ADVANCED TECH MATERIALS , RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
Inventor： RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: C11D3/30
CPC classification number: C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
Abstract translation: 一种液体去除组合物和用于从其上具有相同材料的微电子器件去除光致抗蚀剂和/或牺牲性抗反射涂层（SARC）材料的方法。 液体去除组合物包含至少一种有机季碱和至少一种表面相互作用增强添加剂。 该组合物在集成电路制造过程中至少部分去除光致抗蚀剂和/或SARC材料，同时微电子器件上的金属物质如铜和钴的蚀刻最少，并且不损伤微电子中使用的低k介电材料 设备架构。
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公开(公告)号：SG183744A1
公开(公告)日：2012-09-27
申请号：SG2012061735
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
IPC: C01B32/50
Abstract: COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESISTA method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Fig. IA
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6.发明公开LOW PH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST 审中-公开pH值低MIXES脱除高密度IMPLANTIEREM RESIST
公开(公告)号：EP2288965A4
公开(公告)日：2011-08-10
申请号：EP09739904
申请日：2009-05-01
Applicant: ADVANCED TECH MATERIALS
Inventor： COOPER EMANUEL , CISSELL JULIE , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: G03F7/42 , H01L21/311
CPC classification number: G03F7/423 , H01L21/31133
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公开(公告)号：EP2190967A4
公开(公告)日：2010-10-13
申请号：EP08827598
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
CPC classification number: G03F7/423 , H01L21/31133
Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
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8.发明公开METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开METALS兼容光致抗蚀剂和/或牺牲防反射涂层除去组合
公开(公告)号：EP1945748A4
公开(公告)日：2009-01-07
申请号：EP06836276
申请日：2006-10-12
Applicant: ADVANCED TECH MATERIALS
Inventor： RATH MELISSA K , BERNHARD DAVID D , BAUM THOMAS H , JIANG PING , ZHOU RENJIE , KORZENSKI MICHAEL B
IPC: C11D7/50
CPC classification number: C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
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