公开(公告)号：WO2009111719A2

公开(公告)日：2009-09-11

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

Abstract translation: 用于从微电子器件以大于或等于去除掺杂的含硅材料的速率除去未掺杂的含硅材料的组合物和方法。

公开(公告)号：WO2009111719A3

公开(公告)日：2009-11-12

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

公开(公告)号：SG188848A1

公开(公告)日：2013-04-30

申请号：SG2013016571

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Abstract: AbstractNON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USEComposition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials. No figure.

公开(公告)号：EP2268765A4

公开(公告)日：2011-10-26

申请号：EP09717260

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08 ,  C11D1/62 ,  C11D3/20 ,  C11D3/33 ,  C11D3/37 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/311

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111