公开(公告)号：WO2008036823A2

公开(公告)日：2008-03-27

申请号：PCT/US2007079044

申请日：2007-09-20

Applicant: ADVANCED TECH MATERIALS ,  ANGST DAVID ,  BARNES JEFFREY A ,  SONTHALIA PRERNA ,  ZHANG PENG

Inventor： ANGST DAVID ,  BARNES JEFFREY A ,  SONTHALIA PRERNA ,  ZHANG PENG

IPC: C11D3/28

CPC classification number: C11D11/0047 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281

Abstract: Compositions useful in microelectronic device manufacturing for cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that include copper metallization, for example, in operations such as post-chemical mechanical polishing cleaning of microelectronic device wafers. The aqueous compositions include at least one alkanolamine, at least one quaternary ammonium hydroxide, uric acid, at least one alcohol and at least one additional organic acid antioxidant.

Abstract translation: 可用于微电子器件制造中用于清洁晶片衬底如微电子器件前体结构的组合物。 该组合物可用于处理包括铜金属化的晶片，例如在诸如微电子器件晶片的化学后机械抛光清洁的操作中。 含水组合物包括至少一种链烷醇胺，至少一种季铵氢氧化物，尿酸，至少一种醇和至少一种另外的有机酸抗氧化剂。

公开(公告)号：WO2009111719A2

公开(公告)日：2009-09-11

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

Abstract translation: 用于从微电子器件以大于或等于去除掺杂的含硅材料的速率除去未掺杂的含硅材料的组合物和方法。

公开(公告)号：WO2009111719A3

公开(公告)日：2009-11-12

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

公开(公告)号：WO2008144501A8

公开(公告)日：2010-04-01

申请号：PCT/US2008063885

申请日：2008-05-16

Applicant: ADVANCED TECH MATERIALS ,  ZHANG PENG ,  BARNES JEFFREY ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  BOGGS KARL

Inventor： ZHANG PENG ,  BARNES JEFFREY ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  BOGGS KARL

IPC: C11D1/00 ,  C09K13/00 ,  C11D1/62 ,  C11D3/30

CPC classification number: C23F11/10 ,  C11D3/0073 ,  C11D3/0084 ,  C11D3/30 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/26 ,  H01L21/02063 ,  H01L21/02074 ,  H01L31/18

Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和用于从具有所述残留物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括新的腐蚀抑制剂。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：WO2008080096A3

公开(公告)日：2008-11-06

申请号：PCT/US2007088643

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

IPC: C09K13/08 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1 .

Abstract translation: 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度低于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃。

公开(公告)号：SG188848A1

公开(公告)日：2013-04-30

申请号：SG2013016571

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Abstract: AbstractNON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USEComposition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials. No figure.

公开(公告)号：SG177201A1

公开(公告)日：2012-01-30

申请号：SG2011091790

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Abstract: Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1

公开(公告)号：EP2268765A4

公开(公告)日：2011-10-26

申请号：EP09717260

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08 ,  C11D1/62 ,  C11D3/20 ,  C11D3/33 ,  C11D3/37 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/311

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

公开(公告)号：EP2164938A4

公开(公告)日：2013-05-01

申请号：EP08755687

申请日：2008-05-16

Applicant: ADVANCED TECH MATERIALS

Inventor： ZHANG PENG ,  BARNES JEFFREY ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  BOGGS KARL

IPC: C11D1/00 ,  C09K13/00 ,  C11D1/62 ,  C11D3/30 ,  C23F11/10

CPC classification number: C23F11/10 ,  C11D3/0073 ,  C11D3/0084 ,  C11D3/30 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/26 ,  H01L21/02063 ,  H01L21/02074 ,  H01L31/18