公开(公告)号：WO2005004199A3

公开(公告)日：2006-08-10

申请号：PCT/US2004019088

申请日：2004-06-15

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

Inventor： KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

IPC: C11D1/00 ,  B08B3/04 ,  B08B3/08 ,  C11D3/30 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

CPC classification number: G03F7/425 ,  C11D7/261 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5013 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133 ,  Y10S134/902 ,  Y10S438/906

Abstract: A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

Abstract translation: 包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质侵袭抑制剂和/或表面活性剂组合的组合物。 该组合物具有用于清洁半导体晶片以从其中除去灰化后残留物的特殊用途。

公开(公告)号：WO2008157345A2

公开(公告)日：2008-12-24

申请号：PCT/US2008066906

申请日：2008-06-13

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA ,  JIANG PING ,  KORZENSKI MICHAEL ,  KING MACKENZIE ,  HAN JIANWEN ,  HILGARTH MONICA ,  LIU JUN ,  ZHOU RENJIE ,  MINSEK DAVID

Inventor： VISINTIN PAMELA ,  JIANG PING ,  KORZENSKI MICHAEL ,  KING MACKENZIE ,  HAN JIANWEN ,  HILGARTH MONICA ,  LIU JUN ,  ZHOU RENJIE ,  MINSEK DAVID

IPC: C11D7/08 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C09K13/08 ,  C11D3/3947 ,  C11D3/3956 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  H01L21/02079 ,  H01L21/31111

Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition preferably includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. Processes include the monitoring and modifying said compositions.

Abstract translation: 去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物优选包含氢氟酸。 组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。 方法包括监测和修饰所述组合物。

公开(公告)号：WO2009111719A2

公开(公告)日：2009-09-11

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

Abstract translation: 用于从微电子器件以大于或等于去除掺杂的含硅材料的速率除去未掺杂的含硅材料的组合物和方法。

公开(公告)号：WO2009111719A3

公开(公告)日：2009-11-12

申请号：PCT/US2009036366

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS ,  SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

Abstract: Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

公开(公告)号：AU2003249279A1

公开(公告)日：2004-02-09

申请号：AU2003249279

申请日：2003-07-16

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  BERNHARD DAVID ,  MINSEK DAVID ,  MURPHY MELISSA

IPC: C03C15/00 ,  C09K13/08 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  C09K13/00 ,  H01L21/302

Abstract: A composition and process for wet stripping removal of sacrificial anti-reflective silicate material, e.g., from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective material is present with permanent silicate materials desired to be unaffected by the wet stripping composition.

公开(公告)号：AU2003218260A1

公开(公告)日：2003-10-13

申请号：AU2003218260

申请日：2003-03-18

Applicant: ADVANCED TECH MATERIALS

Inventor： SEIJO MA FATIMA ,  WOJTCZAK WILLIAM A ,  BERNHARD DAVID ,  BAUM THOMAS H ,  MINSEK DAVID

IPC: C11D7/10 ,  C11D7/22 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D11/00 ,  C23G1/02 ,  G03F7/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  C23G1/18 ,  C23G5/00 ,  C23G5/02 ,  C23G5/032 ,  C23G5/036 ,  C23G1/06 ,  C23G1/14

Abstract: A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

公开(公告)号：SG188848A1

公开(公告)日：2013-04-30

申请号：SG2013016571

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

Abstract: AbstractNON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USEComposition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials. No figure.

公开(公告)号：CA2599727A1

公开(公告)日：2005-09-15

申请号：CA2599727

申请日：2005-03-02

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  BERNHARD DAVID D ,  RATH MELISSA K ,  MINSEK DAVID

IPC: G03F7/32 ,  A61K31/44 ,  C11D1/62

Abstract: A composition and process for removing photoresist and/or sacrificial anti- reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or c o- solvent species, to achieve high-efficiency removal of photoresist and/or SA RC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in th e semiconductor architecture.

公开(公告)号：EP2268765A4

公开(公告)日：2011-10-26

申请号：EP09717260

申请日：2009-03-06

Applicant: ADVANCED TECH MATERIALS

Inventor： SONTHALIA PRERNA ,  COOPER EMANUEL ,  MINSEK DAVID ,  ZHANG PENG ,  PETRUSKA MELISSA A ,  SERKE BRITTANY ,  HURD TRACE QUENTIN

IPC: C09K13/08 ,  C11D1/62 ,  C11D3/20 ,  C11D3/33 ,  C11D3/37 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/311

CPC classification number: C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

公开(公告)号：EP1551936A4

公开(公告)日：2008-04-16

申请号：EP03765600

申请日：2003-07-16

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  BERNHARD DAVID ,  MINSEK DAVID ,  RATH MELISSA

IPC: H01L21/02 ,  C03C15/00 ,  C09K13/00 ,  C09K13/08 ,  G03F7/42 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/31133 ,  C03C15/00 ,  C09K13/08 ,  G03F7/423 ,  H01L21/02063

Abstract: A composition and process for wet stripping removal of sacrificial anti-reflective silicate material, e.g., from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective material is present with permanent silicate materials desired to be unaffected by the wet stripping composition.